DE3485373D1 - Verfahren zur herstellung eines fotoleitfaehigen elementes. - Google Patents

Verfahren zur herstellung eines fotoleitfaehigen elementes.

Info

Publication number
DE3485373D1
DE3485373D1 DE8484115397T DE3485373T DE3485373D1 DE 3485373 D1 DE3485373 D1 DE 3485373D1 DE 8484115397 T DE8484115397 T DE 8484115397T DE 3485373 T DE3485373 T DE 3485373T DE 3485373 D1 DE3485373 D1 DE 3485373D1
Authority
DE
Germany
Prior art keywords
photoconductive
layer
members
substrate
microwave energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484115397T
Other languages
English (en)
Inventor
Annette G Johncock
Stephen J Hudgens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3485373D1 publication Critical patent/DE3485373D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Discharging, Photosensitive Material Shape In Electrophotography (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
DE8484115397T 1984-02-14 1984-12-13 Verfahren zur herstellung eines fotoleitfaehigen elementes. Expired - Fee Related DE3485373D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58008184A 1984-02-14 1984-02-14

Publications (1)

Publication Number Publication Date
DE3485373D1 true DE3485373D1 (de) 1992-01-30

Family

ID=24319608

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8484115397T Expired - Fee Related DE3485373D1 (de) 1984-02-14 1984-12-13 Verfahren zur herstellung eines fotoleitfaehigen elementes.
DE198484115397T Pending DE151754T1 (de) 1984-02-14 1984-12-13 Verfahren zur herstellung eines fotoleitfaehigen elementes und auf diese weise hergestellte fotoleitfaehige elemente.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE198484115397T Pending DE151754T1 (de) 1984-02-14 1984-12-13 Verfahren zur herstellung eines fotoleitfaehigen elementes und auf diese weise hergestellte fotoleitfaehige elemente.

Country Status (6)

Country Link
EP (1) EP0151754B1 (de)
JP (1) JPH07107896B2 (de)
AT (1) ATE70665T1 (de)
AU (1) AU3872885A (de)
CA (1) CA1241617A (de)
DE (2) DE3485373D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619729A (en) * 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
EP0192473A3 (de) * 1985-02-19 1988-04-06 Exxon Research And Engineering Company Amorpher Photoempfänger mit grosser Empfindlichkeit im langen Wellenlängenbereich
CA1271076A (en) * 1985-08-26 1990-07-03 Stephen J. Hudgens Enhancement layer for electrophotographic devices and method for decreasing charge fatigue through the use of said layer
US4675272A (en) * 1985-11-01 1987-06-23 Energy Conversion Devices, Inc. Electrolevelled substrate for electrophotographic photoreceptors and method of fabricating same
EP0231531A3 (de) * 1986-02-03 1988-10-05 Energy Conversion Devices, Inc. Anpassungsverfahren und -vorrichtung eines Mikrowellen durchlassenden Fensters
JPS62220961A (ja) * 1986-03-20 1987-09-29 Minolta Camera Co Ltd 感光体
JPS62220959A (ja) * 1986-03-20 1987-09-29 Minolta Camera Co Ltd 感光体
EP0238095A1 (de) * 1986-03-20 1987-09-23 Minolta Camera Kabushiki Kaisha Lichtempfindliches Element, bestehend aus einer Ladungstransportschicht und einer Ladungserzeugungsschicht
EP0241033A1 (de) * 1986-04-09 1987-10-14 Minolta Camera Kabushiki Kaisha Lichtempfindliches Element, bestehend aus einer Ladungstransportschicht und einer Ladungserzeugungsschicht
US5233265A (en) * 1986-07-04 1993-08-03 Hitachi, Ltd. Photoconductive imaging apparatus
US4888521A (en) * 1986-07-04 1989-12-19 Hitachi Ltd. Photoconductive device and method of operating the same
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
EP0261651A1 (de) * 1986-09-26 1988-03-30 Minolta Camera Kabushiki Kaisha Lichtempfindliches Element, das eine Ladungserzeugungsschicht und eine Ladungstransportschicht enthält
EP0283699B1 (de) * 1987-03-23 1994-06-15 Hitachi, Ltd. Photoelektrische Umwandlungsanordnung
JP2627323B2 (ja) * 1988-10-27 1997-07-02 三洋電機株式会社 半導体装置及びその製造方法
JPH02141578A (ja) * 1988-11-24 1990-05-30 Canon Inc 堆積膜形成装置
US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
JP2008115460A (ja) 2006-10-12 2008-05-22 Canon Inc 半導体素子の形成方法及び光起電力素子の形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element
ES505269A0 (es) * 1980-09-09 1982-12-16 Energy Conversion Devices Inc Metodo para preparar una aleacion amorfa fotosensible mejo- rada
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
US4557987A (en) * 1980-12-23 1985-12-10 Canon Kabushiki Kaisha Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
DE3200376A1 (de) * 1981-01-09 1982-11-04 Canon K.K., Tokyo Fotoleitfaehiges element
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material
JPS5825226A (ja) * 1982-07-19 1983-02-15 Shunpei Yamazaki プラズマ気相反応装置
JPS5918685A (ja) * 1982-07-21 1984-01-31 Matsushita Electric Ind Co Ltd 光電変換素子の製造方法

Also Published As

Publication number Publication date
EP0151754B1 (de) 1991-12-18
JPS60189274A (ja) 1985-09-26
CA1241617A (en) 1988-09-06
ATE70665T1 (de) 1992-01-15
DE151754T1 (de) 1986-01-16
EP0151754A3 (en) 1987-04-01
JPH07107896B2 (ja) 1995-11-15
EP0151754A2 (de) 1985-08-21
AU3872885A (en) 1985-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee