ES8402119A1 - Un metodo mejorado para la obtencion de capas de sulfuro de cadmio. - Google Patents

Un metodo mejorado para la obtencion de capas de sulfuro de cadmio.

Info

Publication number
ES8402119A1
ES8402119A1 ES519974A ES519974A ES8402119A1 ES 8402119 A1 ES8402119 A1 ES 8402119A1 ES 519974 A ES519974 A ES 519974A ES 519974 A ES519974 A ES 519974A ES 8402119 A1 ES8402119 A1 ES 8402119A1
Authority
ES
Spain
Prior art keywords
solar cells
produced
producing
cds layers
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES519974A
Other languages
English (en)
Other versions
ES519974A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES519974A0 publication Critical patent/ES519974A0/es
Publication of ES8402119A1 publication Critical patent/ES8402119A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C30B29/50—Cadmium sulfide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

METODO PARA LA OBTENCION DE CAPAS DE SULFURO DE CADMIO, LAS CUALES PRESENTAN UN EFECTO FOTOVOLTAICO EN LAS CELULAS SOLARES.COMPRENDE LAS SIGUIENTES OPERACIONES: PRIMERA, SE DEPOSITA SOBRE UN SUSTRATO UNA CAPA DE SULFURO DE CADMIO POR ELECTROLISIS CON CORRIENTE ALTERNA, PROCEDENTE DE UN ELECTROLITO QUE CONTIENE UNA SAL DE CADMIO Y UNOS COMPUESTOS CON CONTENIDO DE AZUFRE; SEGUNDA, DICHO SUSTRATO CON LA CAPA DE SULFURO DE CADMIO EN EL DEPOSITADA SE SEPARA DE LA SOLUCION DEL ELECTROLITO; Y POR ULTIMO, EL SUSTRATO PREPARADO SE SOMETE A UN PROCESO DE TEMPLE PARA PRODUCIRUNA CAPA DE SULFURO DE CADMIO POLICRISTALINO.
ES519974A 1982-02-22 1983-02-22 Un metodo mejorado para la obtencion de capas de sulfuro de cadmio. Expired ES8402119A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823206347 DE3206347A1 (de) 1982-02-22 1982-02-22 Verfahren zur herstellung von cds-schichten fuer solarzellen

Publications (2)

Publication Number Publication Date
ES519974A0 ES519974A0 (es) 1984-01-01
ES8402119A1 true ES8402119A1 (es) 1984-01-01

Family

ID=6156400

Family Applications (1)

Application Number Title Priority Date Filing Date
ES519974A Expired ES8402119A1 (es) 1982-02-22 1983-02-22 Un metodo mejorado para la obtencion de capas de sulfuro de cadmio.

Country Status (2)

Country Link
DE (1) DE3206347A1 (es)
ES (1) ES8402119A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10141101C1 (de) 2001-08-22 2003-07-03 Schott Glas Optische Farbgläser, ihre Verwendung und Verfahren zu ihrer Herstellung
GB0127113D0 (en) * 2001-11-10 2002-01-02 Univ Sheffield Copper indium based thin film photovoltaic devices and methods of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4095006A (en) * 1976-03-26 1978-06-13 Photon Power, Inc. Cadmium sulfide film
US4113531A (en) * 1976-10-26 1978-09-12 Hughes Aircraft Company Process for fabricating polycrystalline inp-cds solar cells

Also Published As

Publication number Publication date
DE3206347A1 (de) 1983-09-01
ES519974A0 (es) 1984-01-01

Similar Documents

Publication Publication Date Title
DE2964526D1 (en) Process for manufacturing a thin-film cds/cdte photovoltaic cell having enhanced conversion efficiency and photovoltaic cell produced by this process
GR3004642T3 (es)
EP0221767A3 (en) Fault tolerant thin-film photovoltaic cell
DE3067762D1 (en) A silver containing thick film conductor composition, a method for producing such a composition, a method of preparing a solar cell comprising screen printing said composition on an n-type layer of a semiconductor wafer and the solar cells thus obtained
AU3035192A (en) Method for manufacture of a solar cell and solar cell
FR2581483B1 (fr) Pile solide integrable et procede de realisation
JPS6453583A (en) Manufacture of series connection array thin film solar battery
ES484359A1 (es) Una pila fotovoltaica mejorada
JPS56167370A (en) Amorphous solar cell
AU498057B2 (en) High efficiency selenium heterojunction solar cells
ES8402119A1 (es) Un metodo mejorado para la obtencion de capas de sulfuro de cadmio.
EP0050925A3 (en) Photovoltaic cell
JPS55111180A (en) Thin-film solar battery of high output voltage
ES8404570A1 (es) Metodo de fabricacion de una culula solar de sulfuro de cadmio.
JPS56132750A (en) Photoelectric converter and manufacture
EP0334110A3 (en) Process for producing polycristalline layers with large crystals for thin film semiconductor devices, like solar cells
FR2447096A1 (fr) Cellule photovoltaique au sulfure de cadmium et son procede de preparation
AU593692B2 (en) Method of depositing a cds layer for a solar cell
JPS56122171A (en) Photovoltaic cell utilized for manufacturing solar battery
JPS57143874A (en) Manufacture of solar cell
Frey Thin Film Solar Cells, a Chance to Convert Solar to Electrical Energy Economically
MOONEY et al. Low-cost process for p-n junction type solar cell[Final Report, 1 Sep. 1980- 28 Feb. 1981]
JPS57107080A (en) Amorphous thin film solar cell
CN102097540A (zh) 一种堆栈型太阳能薄膜电池及其制作方法
MA Properties of spray pyrolysis CdS film and its application to thin film solar cell[Ph. D. Thesis]

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971001