ES484359A1 - Una pila fotovoltaica mejorada - Google Patents

Una pila fotovoltaica mejorada

Info

Publication number
ES484359A1
ES484359A1 ES484359A ES484359A ES484359A1 ES 484359 A1 ES484359 A1 ES 484359A1 ES 484359 A ES484359 A ES 484359A ES 484359 A ES484359 A ES 484359A ES 484359 A1 ES484359 A1 ES 484359A1
Authority
ES
Spain
Prior art keywords
zinc phosphide
absorber
generator
photovoltaic cells
cells employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES484359A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Delaware
Original Assignee
University of Delaware
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Delaware filed Critical University of Delaware
Publication of ES484359A1 publication Critical patent/ES484359A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Hybrid Cells (AREA)

Abstract

Una pila fotovoltaica mejorada del tipo que consiste como componente sucesivos en la trayectoria eléctrica a través del dispositivo, un primer medio de contacto eléctrico, un absorbedor-generador en el contacto eléctrico óhmico con el primer medio de contacto; un colector para rectificar el contacto eléctrico con el absorbedor -generador y para formar una junta con el mismo, y un medio para poner en contacto eléctricamente el colector, comprendiendo la mejora que el absorbedor-generador consiste de fosfuro de zinc.
ES484359A 1978-09-22 1979-09-21 Una pila fotovoltaica mejorada Expired ES484359A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/944,971 US4477688A (en) 1978-09-22 1978-09-22 Photovoltaic cells employing zinc phosphide

Publications (1)

Publication Number Publication Date
ES484359A1 true ES484359A1 (es) 1980-04-16

Family

ID=25482398

Family Applications (1)

Application Number Title Priority Date Filing Date
ES484359A Expired ES484359A1 (es) 1978-09-22 1979-09-21 Una pila fotovoltaica mejorada

Country Status (8)

Country Link
US (1) US4477688A (es)
EP (1) EP0009401A1 (es)
JP (1) JPS5550584A (es)
BR (1) BR7906007A (es)
CA (1) CA1142632A (es)
ES (1) ES484359A1 (es)
IL (1) IL58272A0 (es)
ZA (1) ZA794966B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342879A (en) * 1980-10-24 1982-08-03 The University Of Delaware Thin film photovoltaic device
JPS59190979U (ja) * 1983-06-03 1984-12-18 大平洋機工株式会社 往復動複列シリンダ型容積ポンプの吐出弁装置
US6541695B1 (en) * 1992-09-21 2003-04-01 Thomas Mowles High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production
KR100475414B1 (ko) * 2002-03-27 2005-03-10 김영창 산화아연 박막상에서의 피-엔 접합 형성방법 및 피-엔접합 박막
US7303632B2 (en) * 2004-05-26 2007-12-04 Cree, Inc. Vapor assisted growth of gallium nitride
US20060070653A1 (en) * 2004-10-04 2006-04-06 Palo Alto Research Center Incorporated Nanostructured composite photovoltaic cell
US7763794B2 (en) * 2004-12-01 2010-07-27 Palo Alto Research Center Incorporated Heterojunction photovoltaic cell
US20060130890A1 (en) * 2004-12-20 2006-06-22 Palo Alto Research Center Incorporated. Heterojunction photovoltaic cell
MX2010003227A (es) * 2007-09-25 2010-04-07 First Solar Inc Dispositivos fotovoltaicos que incluyen una capa interfacial.
KR20140014057A (ko) 2010-06-16 2014-02-05 다우 글로벌 테크놀로지스 엘엘씨 광전 디바이스에서의 사용에 적합한 개선된 그룹 ｉｉｂ/ｖａ 반도체
JP5649435B2 (ja) * 2010-12-17 2015-01-07 株式会社フジクラ 色素増感太陽電池
EP2673798A1 (en) 2011-02-11 2013-12-18 Dow Global Technologies LLC Methodology for forming pnictide compositions suitable for use in microelectronic devices
CN104396021B (zh) 2012-01-31 2016-10-12 陶氏环球技术有限责任公司 包括改进的磷属元素化物半导体膜的光伏器件的制造方法
WO2013116320A2 (en) * 2012-01-31 2013-08-08 Dow Global Technologies Llc Method of making photovoltaic devices with reduced conduction band offset between pnictide absorber films and emitter films
US10355157B2 (en) * 2013-11-04 2019-07-16 Columbus Photovoltaics LLC Photovoltaic cells
CN114538397A (zh) * 2022-03-11 2022-05-27 先导薄膜材料（广东）有限公司 一种磷化镉的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368125A (en) * 1965-08-25 1968-02-06 Rca Corp Semiconductor gallium arsenide with germanium connecting layer
JPS50153885A (es) * 1974-05-31 1975-12-11

Also Published As

Publication number Publication date
BR7906007A (pt) 1980-07-08
IL58272A0 (en) 1979-12-30
JPS5550584A (en) 1980-04-12
ZA794966B (en) 1980-11-26
CA1142632A (en) 1983-03-08
US4477688A (en) 1984-10-16
EP0009401A1 (en) 1980-04-02

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