BR7906007A - Aperfeicoamento em pilha fotovoltaica - Google Patents

Aperfeicoamento em pilha fotovoltaica

Info

Publication number
BR7906007A
BR7906007A BR7906007A BR7906007A BR7906007A BR 7906007 A BR7906007 A BR 7906007A BR 7906007 A BR7906007 A BR 7906007A BR 7906007 A BR7906007 A BR 7906007A BR 7906007 A BR7906007 A BR 7906007A
Authority
BR
Brazil
Prior art keywords
photovoltaic pile
improvement
pile improvement
photovoltaic
pile
Prior art date
Application number
BR7906007A
Other languages
English (en)
Inventor
J Masi
A Catalano
V Delal
J Meakin
A Barnett
Original Assignee
Univ Delaware
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Delaware filed Critical Univ Delaware
Publication of BR7906007A publication Critical patent/BR7906007A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Hybrid Cells (AREA)
BR7906007A 1978-09-22 1979-09-20 Aperfeicoamento em pilha fotovoltaica BR7906007A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/944,971 US4477688A (en) 1978-09-22 1978-09-22 Photovoltaic cells employing zinc phosphide

Publications (1)

Publication Number Publication Date
BR7906007A true BR7906007A (pt) 1980-07-08

Family

ID=25482398

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7906007A BR7906007A (pt) 1978-09-22 1979-09-20 Aperfeicoamento em pilha fotovoltaica

Country Status (8)

Country Link
US (1) US4477688A (pt)
EP (1) EP0009401A1 (pt)
JP (1) JPS5550584A (pt)
BR (1) BR7906007A (pt)
CA (1) CA1142632A (pt)
ES (1) ES484359A1 (pt)
IL (1) IL58272A0 (pt)
ZA (1) ZA794966B (pt)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342879A (en) * 1980-10-24 1982-08-03 The University Of Delaware Thin film photovoltaic device
JPS59190979U (ja) * 1983-06-03 1984-12-18 大平洋機工株式会社 往復動複列シリンダ型容積ポンプの吐出弁装置
US6541695B1 (en) * 1992-09-21 2003-04-01 Thomas Mowles High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production
KR100475414B1 (ko) * 2002-03-27 2005-03-10 김영창 산화아연 박막상에서의 피-엔 접합 형성방법 및 피-엔접합 박막
US7303632B2 (en) * 2004-05-26 2007-12-04 Cree, Inc. Vapor assisted growth of gallium nitride
US20060070653A1 (en) * 2004-10-04 2006-04-06 Palo Alto Research Center Incorporated Nanostructured composite photovoltaic cell
US7763794B2 (en) * 2004-12-01 2010-07-27 Palo Alto Research Center Incorporated Heterojunction photovoltaic cell
US20060130890A1 (en) * 2004-12-20 2006-06-22 Palo Alto Research Center Incorporated. Heterojunction photovoltaic cell
KR101503557B1 (ko) * 2007-09-25 2015-03-17 퍼스트 솔라, 인코포레이티드 계면 층을 포함한 광기전 장치
JP2013528956A (ja) 2010-06-16 2013-07-11 ダウ グローバル テクノロジーズ エルエルシー 光電池デバイスにおける使用に適する改良されたiib/va族半導体
JP5649435B2 (ja) * 2010-12-17 2015-01-07 株式会社フジクラ 色素増感太陽電池
CN103460340A (zh) 2011-02-11 2013-12-18 陶氏环球技术有限责任公司 用于形成适合用于微电子器件的磷属元素化物组合物的方法
JP2015506595A (ja) * 2012-01-31 2015-03-02 ダウ グローバル テクノロジーズ エルエルシー プニクチド吸収体膜とエミッタ膜との間の伝導帯オフセットを低下させた光起電力デバイスの製造方法
WO2013116323A2 (en) 2012-01-31 2013-08-08 Dow Global Technologies Llc Method of making photovoltaic devices incorporating improved pnictide semiconductor films
JP6567539B2 (ja) * 2013-11-04 2019-08-28 コロンバス・フォトヴォルテイクス・リミテッド・ライアビリティ・カンパニー 光起電力セル、回路、及び方法
CN114538397A (zh) * 2022-03-11 2022-05-27 先导薄膜材料(广东)有限公司 一种磷化镉的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368125A (en) * 1965-08-25 1968-02-06 Rca Corp Semiconductor gallium arsenide with germanium connecting layer
JPS50153885A (pt) * 1974-05-31 1975-12-11

Also Published As

Publication number Publication date
US4477688A (en) 1984-10-16
IL58272A0 (en) 1979-12-30
ZA794966B (en) 1980-11-26
ES484359A1 (es) 1980-04-16
EP0009401A1 (en) 1980-04-02
CA1142632A (en) 1983-03-08
JPS5550584A (en) 1980-04-12

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