BR7906007A - Aperfeicoamento em pilha fotovoltaica - Google Patents
Aperfeicoamento em pilha fotovoltaicaInfo
- Publication number
- BR7906007A BR7906007A BR7906007A BR7906007A BR7906007A BR 7906007 A BR7906007 A BR 7906007A BR 7906007 A BR7906007 A BR 7906007A BR 7906007 A BR7906007 A BR 7906007A BR 7906007 A BR7906007 A BR 7906007A
- Authority
- BR
- Brazil
- Prior art keywords
- photovoltaic pile
- improvement
- pile improvement
- photovoltaic
- pile
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/944,971 US4477688A (en) | 1978-09-22 | 1978-09-22 | Photovoltaic cells employing zinc phosphide |
Publications (1)
Publication Number | Publication Date |
---|---|
BR7906007A true BR7906007A (pt) | 1980-07-08 |
Family
ID=25482398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR7906007A BR7906007A (pt) | 1978-09-22 | 1979-09-20 | Aperfeicoamento em pilha fotovoltaica |
Country Status (8)
Country | Link |
---|---|
US (1) | US4477688A (pt) |
EP (1) | EP0009401A1 (pt) |
JP (1) | JPS5550584A (pt) |
BR (1) | BR7906007A (pt) |
CA (1) | CA1142632A (pt) |
ES (1) | ES484359A1 (pt) |
IL (1) | IL58272A0 (pt) |
ZA (1) | ZA794966B (pt) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4342879A (en) * | 1980-10-24 | 1982-08-03 | The University Of Delaware | Thin film photovoltaic device |
JPS59190979U (ja) * | 1983-06-03 | 1984-12-18 | 大平洋機工株式会社 | 往復動複列シリンダ型容積ポンプの吐出弁装置 |
US6541695B1 (en) * | 1992-09-21 | 2003-04-01 | Thomas Mowles | High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production |
KR100475414B1 (ko) * | 2002-03-27 | 2005-03-10 | 김영창 | 산화아연 박막상에서의 피-엔 접합 형성방법 및 피-엔접합 박막 |
US7303632B2 (en) * | 2004-05-26 | 2007-12-04 | Cree, Inc. | Vapor assisted growth of gallium nitride |
US20060070653A1 (en) * | 2004-10-04 | 2006-04-06 | Palo Alto Research Center Incorporated | Nanostructured composite photovoltaic cell |
US7763794B2 (en) * | 2004-12-01 | 2010-07-27 | Palo Alto Research Center Incorporated | Heterojunction photovoltaic cell |
US20060130890A1 (en) * | 2004-12-20 | 2006-06-22 | Palo Alto Research Center Incorporated. | Heterojunction photovoltaic cell |
KR101503557B1 (ko) * | 2007-09-25 | 2015-03-17 | 퍼스트 솔라, 인코포레이티드 | 계면 층을 포함한 광기전 장치 |
JP2013528956A (ja) | 2010-06-16 | 2013-07-11 | ダウ グローバル テクノロジーズ エルエルシー | 光電池デバイスにおける使用に適する改良されたiib/va族半導体 |
JP5649435B2 (ja) * | 2010-12-17 | 2015-01-07 | 株式会社フジクラ | 色素増感太陽電池 |
CN103460340A (zh) | 2011-02-11 | 2013-12-18 | 陶氏环球技术有限责任公司 | 用于形成适合用于微电子器件的磷属元素化物组合物的方法 |
JP2015506595A (ja) * | 2012-01-31 | 2015-03-02 | ダウ グローバル テクノロジーズ エルエルシー | プニクチド吸収体膜とエミッタ膜との間の伝導帯オフセットを低下させた光起電力デバイスの製造方法 |
WO2013116323A2 (en) | 2012-01-31 | 2013-08-08 | Dow Global Technologies Llc | Method of making photovoltaic devices incorporating improved pnictide semiconductor films |
JP6567539B2 (ja) * | 2013-11-04 | 2019-08-28 | コロンバス・フォトヴォルテイクス・リミテッド・ライアビリティ・カンパニー | 光起電力セル、回路、及び方法 |
CN114538397A (zh) * | 2022-03-11 | 2022-05-27 | 先导薄膜材料(广东)有限公司 | 一种磷化镉的制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3368125A (en) * | 1965-08-25 | 1968-02-06 | Rca Corp | Semiconductor gallium arsenide with germanium connecting layer |
JPS50153885A (pt) * | 1974-05-31 | 1975-12-11 |
-
1978
- 1978-09-22 US US05/944,971 patent/US4477688A/en not_active Expired - Lifetime
-
1979
- 1979-09-18 IL IL58272A patent/IL58272A0/xx unknown
- 1979-09-19 ZA ZA00794966A patent/ZA794966B/xx unknown
- 1979-09-19 EP EP79301946A patent/EP0009401A1/en not_active Withdrawn
- 1979-09-20 BR BR7906007A patent/BR7906007A/pt unknown
- 1979-09-21 ES ES484359A patent/ES484359A1/es not_active Expired
- 1979-09-21 JP JP12191079A patent/JPS5550584A/ja active Pending
- 1979-09-21 CA CA000336110A patent/CA1142632A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4477688A (en) | 1984-10-16 |
IL58272A0 (en) | 1979-12-30 |
ZA794966B (en) | 1980-11-26 |
ES484359A1 (es) | 1980-04-16 |
EP0009401A1 (en) | 1980-04-02 |
CA1142632A (en) | 1983-03-08 |
JPS5550584A (en) | 1980-04-12 |
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