DE3431603A1 - Photoelektrischer wandler - Google Patents

Photoelektrischer wandler

Info

Publication number
DE3431603A1
DE3431603A1 DE19843431603 DE3431603A DE3431603A1 DE 3431603 A1 DE3431603 A1 DE 3431603A1 DE 19843431603 DE19843431603 DE 19843431603 DE 3431603 A DE3431603 A DE 3431603A DE 3431603 A1 DE3431603 A1 DE 3431603A1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843431603
Other languages
English (en)
Other versions
DE3431603C2 (de
Inventor
Yutaka Hayashi
Hideyo Iida
Toshio Mishuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP58157489A priority Critical patent/JPH0680837B2/ja
Application filed by Agency of Industrial Science and Technology, Taiyo Yuden Co Ltd filed Critical Agency of Industrial Science and Technology
Publication of DE3431603A1 publication Critical patent/DE3431603A1/de
Application granted granted Critical
Publication of DE3431603C2 publication Critical patent/DE3431603C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
DE3431603A 1983-08-29 1984-08-28 Photoelektrischer Wandler Expired - Fee Related DE3431603C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157489A JPH0680837B2 (ja) 1983-08-29 1983-08-29 光路を延長した光電変換素子

Publications (2)

Publication Number Publication Date
DE3431603A1 true DE3431603A1 (de) 1985-03-14
DE3431603C2 DE3431603C2 (de) 1994-07-07

Family

ID=15650799

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3431603A Expired - Fee Related DE3431603C2 (de) 1983-08-29 1984-08-28 Photoelektrischer Wandler

Country Status (5)

Country Link
US (1) US4644091A (de)
JP (1) JPH0680837B2 (de)
DE (1) DE3431603C2 (de)
FR (1) FR2551267B1 (de)
IT (1) IT1179083B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4124795A1 (de) * 1990-07-27 1992-02-20 Fraunhofer Ges Forschung Solarmodul

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068663A (en) * 1983-09-26 1985-04-19 Komatsu Denshi Kinzoku Kk Amorphous silicon solar battery
DE3446807C2 (de) * 1984-12-21 1990-05-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De
US4683160A (en) * 1985-05-09 1987-07-28 Exxon Research And Engineering Company Solar cells with correlated roughness substrate
US4929524A (en) * 1986-09-12 1990-05-29 Canon Kabushiki Kaisha Organic photo conductive medium
US5024953A (en) * 1988-03-22 1991-06-18 Hitachi, Ltd. Method for producing opto-electric transducing element
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
JPH0793450B2 (ja) * 1990-09-19 1995-10-09 株式会社日立製作所 コルゲート型太陽電池
US5098482A (en) * 1990-11-07 1992-03-24 Solarex Corporation Vertical junction solar cell
US5272356A (en) * 1991-11-12 1993-12-21 Hughes Aircraft Company Multiple quantum well photodetector for normal incident radiation
US5261970A (en) * 1992-04-08 1993-11-16 Sverdrup Technology, Inc. Optoelectronic and photovoltaic devices with low-reflectance surfaces
DE69811511T2 (de) 1997-03-21 2004-02-19 Sanyo Electric Co., Ltd., Moriguchi Herstellungsverfahren für ein photovoltaisches bauelement
JPH1168158A (ja) 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
US6335479B1 (en) * 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
AUPP699798A0 (en) * 1998-11-06 1998-12-03 Pacific Solar Pty Limited Thin films with light trapping
DE10040459A1 (de) * 2000-08-18 2002-03-21 Infineon Technologies Ag PIN-Fotodiode in einer vertikal strukturierten Schichtenfolge und Verfahren zur Herstellung einer PIN-Diode
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US7888594B2 (en) 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
KR20100125443A (ko) * 2008-03-25 2010-11-30 코닝 인코포레이티드 광전지용 기판
US9299863B2 (en) * 2008-05-07 2016-03-29 The Hong Kong University Of Science And Technology Ultrathin film multi-crystalline photovoltaic device
JP5618465B2 (ja) * 2008-05-29 2014-11-05 京セラ株式会社 薄膜太陽電池モジュール
EP2161758A1 (de) * 2008-09-05 2010-03-10 Flexucell ApS Solarzelle und Verfahren zu dessen Herstellung
US8022291B2 (en) 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
US20110126890A1 (en) * 2009-11-30 2011-06-02 Nicholas Francis Borrelli Textured superstrates for photovoltaics
US8663732B2 (en) * 2010-02-26 2014-03-04 Corsam Technologies Llc Light scattering inorganic substrates using monolayers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2509533A1 (de) * 1974-03-11 1975-09-18 Rca Corp Sonnenzelle
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
EP0012217A2 (de) * 1978-12-13 1980-06-25 International Business Machines Corporation Schichtvorrichtung zur Umwandlung optischer Energie
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt Boelkow Blohm Halbleiterbauelement fuer die umsetzung von licht in elektrische energie
JPS5749278A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Amorphous silicone solar cell
DE3048381A1 (de) * 1980-12-22 1982-07-29 Messerschmitt Boelkow Blohm "halbleiterbauelement"
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
EP0102204A1 (de) * 1982-08-04 1984-03-07 Exxon Research And Engineering Company Photovoltaisches Bauelement mit erhöhter Lichtaufnahmefähigkeit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material
US4162928A (en) * 1978-09-29 1979-07-31 Nasa Solar cell module
JP60041878B2 (en) * 1979-02-14 1985-09-19 Sharp Kk Thin film solar cell
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
JPH0432553B2 (de) * 1982-12-28 1992-05-29
JPS59127879A (en) * 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd Photoelectric conversion device and manufacture thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2509533A1 (de) * 1974-03-11 1975-09-18 Rca Corp Sonnenzelle
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
EP0012217A2 (de) * 1978-12-13 1980-06-25 International Business Machines Corporation Schichtvorrichtung zur Umwandlung optischer Energie
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt Boelkow Blohm Halbleiterbauelement fuer die umsetzung von licht in elektrische energie
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
JPS5749278A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Amorphous silicone solar cell
DE3048381A1 (de) * 1980-12-22 1982-07-29 Messerschmitt Boelkow Blohm "halbleiterbauelement"
EP0102204A1 (de) * 1982-08-04 1984-03-07 Exxon Research And Engineering Company Photovoltaisches Bauelement mit erhöhter Lichtaufnahmefähigkeit

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
US-B.: The Conference Record of the Fifteenth IEEE Photovoltaic Specialists Conference 1981, S. 867-870 *
US-Z.: IEEE Trans. Electron Devices, Bd. ED-29, No. 2, 1982, S. 300-305 *
US-Z.: J.Vac.Sci.Technol., Bd. A1 (2), Apr.-June 1983, S. 578-582 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4124795A1 (de) * 1990-07-27 1992-02-20 Fraunhofer Ges Forschung Solarmodul

Also Published As

Publication number Publication date
FR2551267B1 (fr) 1987-08-28
FR2551267A1 (fr) 1985-03-01
DE3431603C2 (de) 1994-07-07
IT8467858D0 (it) 1984-08-28
IT1179083B (it) 1987-09-16
US4644091A (en) 1987-02-17
JPH0680837B2 (ja) 1994-10-12
JPS6049679A (en) 1985-03-18

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: THE PRESIDENT OF KOGYO GIJUTSUIN, TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee