DE3414772C2 - - Google Patents
Info
- Publication number
- DE3414772C2 DE3414772C2 DE3414772A DE3414772A DE3414772C2 DE 3414772 C2 DE3414772 C2 DE 3414772C2 DE 3414772 A DE3414772 A DE 3414772A DE 3414772 A DE3414772 A DE 3414772A DE 3414772 C2 DE3414772 C2 DE 3414772C2
- Authority
- DE
- Germany
- Prior art keywords
- diffusion region
- type
- substrate
- conductivity type
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 24
- 230000005669 field effect Effects 0.000 claims description 11
- 230000000295 complement effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims 6
- 230000000694 effects Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58074274A JPS59198749A (ja) | 1983-04-25 | 1983-04-25 | 相補形電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3414772A1 DE3414772A1 (de) | 1984-10-25 |
| DE3414772C2 true DE3414772C2 (da) | 1987-10-08 |
Family
ID=13542371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843414772 Granted DE3414772A1 (de) | 1983-04-25 | 1984-04-18 | Komplementaerer feldeffekttransistor |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS59198749A (da) |
| DE (1) | DE3414772A1 (da) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4439131A1 (de) * | 1993-11-05 | 1995-05-11 | Mitsubishi Electric Corp | Halbleitereinrichtung und Verfahren zur Herstellung derselben |
| DE4405631C1 (de) * | 1994-02-22 | 1995-07-20 | Bosch Gmbh Robert | Integriertes Bauelement |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3743930A1 (de) * | 1987-12-23 | 1989-07-06 | Siemens Ag | Integrierte schaltung mit "latch-up"-schutzschaltung in komplementaerer mos-schaltungstechnik |
| CN110534512B (zh) * | 2019-09-07 | 2023-02-07 | 电子科技大学 | 一种抗闩锁版图结构 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4035826A (en) * | 1976-02-23 | 1977-07-12 | Rca Corporation | Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region |
| JPS5931987B2 (ja) * | 1977-01-11 | 1984-08-06 | 三洋電機株式会社 | 相補型ｍｏｓトランジスタ |
| JPS5843559A (ja) * | 1981-09-08 | 1983-03-14 | Mitsubishi Electric Corp | 相補型半導体装置 |
-
1983
- 1983-04-25 JP JP58074274A patent/JPS59198749A/ja active Pending
-
1984
- 1984-04-18 DE DE19843414772 patent/DE3414772A1/de active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4439131A1 (de) * | 1993-11-05 | 1995-05-11 | Mitsubishi Electric Corp | Halbleitereinrichtung und Verfahren zur Herstellung derselben |
| DE4439131C2 (de) * | 1993-11-05 | 1998-02-19 | Mitsubishi Electric Corp | Halbleitereinrichtung mit einem Verbindungsbereich und Verfahren zur Herstellung derselben |
| US6153915A (en) * | 1993-11-05 | 2000-11-28 | Mitsubishi Denki Kabushiki Kaisha | CMOS semiconductor device |
| DE4405631C1 (de) * | 1994-02-22 | 1995-07-20 | Bosch Gmbh Robert | Integriertes Bauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59198749A (ja) | 1984-11-10 |
| DE3414772A1 (de) | 1984-10-25 |
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| DE3414772C2 (da) | ||
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8105 | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 27/10 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |