DE3411020C2 - - Google Patents

Info

Publication number
DE3411020C2
DE3411020C2 DE3411020A DE3411020A DE3411020C2 DE 3411020 C2 DE3411020 C2 DE 3411020C2 DE 3411020 A DE3411020 A DE 3411020A DE 3411020 A DE3411020 A DE 3411020A DE 3411020 C2 DE3411020 C2 DE 3411020C2
Authority
DE
Germany
Prior art keywords
region
carrier injection
drift
gate electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3411020A
Other languages
German (de)
English (en)
Other versions
DE3411020A1 (de
Inventor
Bantval Jayant Clifton Park N.Y. Us Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23914547&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3411020(C2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE3411020A1 publication Critical patent/DE3411020A1/de
Application granted granted Critical
Publication of DE3411020C2 publication Critical patent/DE3411020C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
DE19843411020 1983-04-04 1984-03-24 Ig-halbleitervorrichtung mit niedrigem on-widerstand Granted DE3411020A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/482,075 US4743952A (en) 1983-04-04 1983-04-04 Insulated-gate semiconductor device with low on-resistance

Publications (2)

Publication Number Publication Date
DE3411020A1 DE3411020A1 (de) 1984-10-11
DE3411020C2 true DE3411020C2 (en, 2012) 1989-03-23

Family

ID=23914547

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843411020 Granted DE3411020A1 (de) 1983-04-04 1984-03-24 Ig-halbleitervorrichtung mit niedrigem on-widerstand

Country Status (3)

Country Link
US (1) US4743952A (en, 2012)
JP (1) JPS59215767A (en, 2012)
DE (1) DE3411020A1 (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
US5472888A (en) * 1988-02-25 1995-12-05 International Rectifier Corporation Depletion mode power MOSFET with refractory gate and method of making same
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
JPH04363069A (ja) * 1990-09-24 1992-12-15 Nippondenso Co Ltd 縦型半導体装置
US5401980A (en) * 1991-09-04 1995-03-28 International Business Machines Corporation 2D/1D junction device as a Coulomb blockade gate
JPH05283703A (ja) * 1992-01-16 1993-10-29 Natl Semiconductor Corp <Ns> Ｄｍｏｓｔ接合絶縁破壊の向上
US6110804A (en) * 1996-12-02 2000-08-29 Semiconductor Components Industries, Llc Method of fabricating a semiconductor device having a floating field conductor
JPH10256550A (ja) * 1997-01-09 1998-09-25 Toshiba Corp 半導体装置
DE102004017723B4 (de) * 2003-04-10 2011-12-08 Fuji Electric Co., Ltd In Rückwärtsrichtung sperrendes Halbleiterbauteil und Verfahren zu seiner Herstellung
US9349847B2 (en) * 2011-12-15 2016-05-24 Hitachi, Ltd. Semiconductor device and power converter
US9911838B2 (en) * 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
JP6088401B2 (ja) * 2013-11-08 2017-03-01 株式会社豊田中央研究所 逆導通ｉｇｂｔ
CN109148305A (zh) * 2018-09-13 2019-01-04 深圳市心版图科技有限公司 一种功率器件及其制备方法
CN109192666A (zh) * 2018-09-14 2019-01-11 深圳市心版图科技有限公司 一种功率器件及其制备方法
CN109119342A (zh) * 2018-09-14 2019-01-01 深圳市心版图科技有限公司 一种功率器件及其制备方法
CN109192665A (zh) * 2018-09-14 2019-01-11 深圳市心版图科技有限公司 一种功率器件及其制备方法
CN109273522A (zh) * 2018-09-14 2019-01-25 深圳市心版图科技有限公司 一种场效应管及其制作方法
CN109119482A (zh) * 2018-09-14 2019-01-01 深圳市心版图科技有限公司 一种场效应管及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1471617A (en) * 1973-06-21 1977-04-27 Sony Corp Circuits comprising a semiconductor device
IT1133869B (it) * 1979-10-30 1986-07-24 Rca Corp Dispositivo mosfet
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
DE3103444A1 (de) * 1981-02-02 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand
DE3200660A1 (de) * 1982-01-12 1983-07-21 Siemens AG, 1000 Berlin und 8000 München Mis-feldeffekttransistor mit ladungstraegerinjektion
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
GB2128018A (en) * 1982-09-22 1984-04-18 Philips Electronic Associated Insulated-gate field-effect transistors
US4523111A (en) * 1983-03-07 1985-06-11 General Electric Company Normally-off, gate-controlled electrical circuit with low on-resistance

Also Published As

Publication number Publication date
DE3411020A1 (de) 1984-10-11
JPS59215767A (ja) 1984-12-05
US4743952A (en) 1988-05-10
JPS6137796B2 (en, 2012) 1986-08-26

Similar Documents

Publication Publication Date Title
DE3411020C2 (en, 2012)
DE3443854C2 (de) Halbleiteranordnung mit isoliertem Gate
DE3856480T2 (de) MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation
DE68926098T2 (de) Mit einer Schottky-Sperrschicht versehene, bipolare Halbleiteranordnung mit isolierter Steuerelektrode und Verfahren zu deren Herstellung
DE2706623C2 (en, 2012)
DE68926384T2 (de) Lateraler Leitfähigkeitsmodulations-MOSFET
DE102008045488B4 (de) Halbleiterbauelement und Verfahren zur Herstellung desselben
DE3816667C2 (de) Gate-gesteuertes monolithisch integriertes Halbleiterelement mit bidirektionaler Leitfähigkeit und Verfahren zu dessen Betrieb
DE3855922T2 (de) An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
EP0043009B1 (de) Steuerbarer Halbleiterschalter
DE2047166A1 (de) Halbleitervorrichtung
DE2832154C2 (en, 2012)
DE68904343T2 (de) Bipolarer transistor mit isolierter steuerelektrode.
DE1614300B2 (de) Feldeffekttransistor mit isolierter Steuerelektrode
DE3905434C2 (de) Bipolare Halbleiterschalteinrichtung und Verfahren zu ihrer Herstellung
DE3401407A1 (de) Halbleitervorrichtung
DE3137730A1 (de) Halbleiterbauteil als festwertspeicherprogrammierer vom sperrschichtdurchbruchs-typ
EP0029163B1 (de) Lichtzündbarer Thyristor und Verfahren zu seinem Betrieb
DE2201028A1 (de) Feldeffekt-Speicherelement
DE4310606C2 (de) GTO-Thyristoren
DE4228832C2 (de) Feldeffekt-gesteuertes Halbleiterbauelement
EP0098496A1 (de) IGFET mit Injektorzone
DE3528562C2 (en, 2012)
DE2604735A1 (de) Integrierter halbleiterbaustein
DE19518339C2 (de) Halbleitereinrichtung und ein Verfahren zur Benutzung derselben

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee