DE3379883D1 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- DE3379883D1 DE3379883D1 DE8383903569T DE3379883T DE3379883D1 DE 3379883 D1 DE3379883 D1 DE 3379883D1 DE 8383903569 T DE8383903569 T DE 8383903569T DE 3379883 T DE3379883 T DE 3379883T DE 3379883 D1 DE3379883 D1 DE 3379883D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57196928A JPS5987840A (ja) | 1982-11-10 | 1982-11-10 | 半導体装置 |
PCT/JP1983/000405 WO1984002036A1 (fr) | 1982-11-10 | 1983-11-10 | Dispositif a semiconducteur |
Publications (1)
Publication Number | Publication Date |
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DE3379883D1 true DE3379883D1 (en) | 1989-06-22 |
Family
ID=16365993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383903569T Expired DE3379883D1 (en) | 1982-11-10 | 1983-11-10 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US5008733A (de) |
EP (1) | EP0124624B1 (de) |
JP (1) | JPS5987840A (de) |
DE (1) | DE3379883D1 (de) |
WO (1) | WO1984002036A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61230344A (ja) * | 1985-04-05 | 1986-10-14 | Toray Silicone Co Ltd | 樹脂封止型半導体装置 |
US4777520A (en) * | 1986-03-27 | 1988-10-11 | Oki Electric Industry Co. Ltd. | Heat-resistant plastic semiconductor device |
JP2585006B2 (ja) * | 1987-07-22 | 1997-02-26 | 東レ・ダウコーニング・シリコーン株式会社 | 樹脂封止型半導体装置およびその製造方法 |
KR0157844B1 (ko) * | 1988-07-15 | 1998-10-15 | 모리나카 마사미 | 수지봉지형 반도체장치 및 제조방법 |
JPH063819B2 (ja) * | 1989-04-17 | 1994-01-12 | セイコーエプソン株式会社 | 半導体装置の実装構造および実装方法 |
JPH03116857A (ja) * | 1989-09-29 | 1991-05-17 | Mitsui Petrochem Ind Ltd | 発光または受光装置 |
JP2548625B2 (ja) * | 1990-08-27 | 1996-10-30 | シャープ株式会社 | 半導体装置の製造方法 |
JP3540356B2 (ja) * | 1994-03-14 | 2004-07-07 | 東レ・ダウコーニング・シリコーン株式会社 | コンフォーマルコーティング剤 |
JPH11219984A (ja) * | 1997-11-06 | 1999-08-10 | Sharp Corp | 半導体装置パッケージおよびその製造方法ならびにそのための回路基板 |
JP2000119627A (ja) * | 1998-10-12 | 2000-04-25 | Dow Corning Toray Silicone Co Ltd | 接着性硬化シリコーンシートの保存方法 |
WO2001086716A1 (en) * | 2000-05-12 | 2001-11-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device mounting circuit board, method of producing the same, and method of producing mounting structure using the same |
US6617674B2 (en) * | 2001-02-20 | 2003-09-09 | Dow Corning Corporation | Semiconductor package and method of preparing same |
JP4844184B2 (ja) * | 2006-03-17 | 2011-12-28 | 株式会社ジェイ・エム・エス | アダプタ |
JP2012238796A (ja) * | 2011-05-13 | 2012-12-06 | Panasonic Corp | 半導体装置及び半導体装置の製造方法 |
ITUB20155681A1 (it) * | 2015-11-18 | 2017-05-18 | St Microelectronics Srl | Dispositivo elettronico resistente a radiazioni e metodo per proteggere un dispositivo elettronico da radiazioni ionizzanti |
US10327655B2 (en) * | 2016-04-11 | 2019-06-25 | Paradromics, Inc. | Neural-interface probe and methods of packaging the same |
WO2018183967A1 (en) | 2017-03-30 | 2018-10-04 | Paradromics, Inc. | Patterned microwire bundles and methods of producing the same |
WO2020070983A1 (ja) | 2018-10-04 | 2020-04-09 | 光陽産業株式会社 | 医療用接続構造 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5527463B2 (de) * | 1973-02-28 | 1980-07-21 | ||
JPS5067077A (de) * | 1973-10-12 | 1975-06-05 | ||
JPS519576A (en) * | 1974-07-12 | 1976-01-26 | Sharp Kk | Handotaisochino seizoho |
JPS51114259A (en) * | 1975-03-31 | 1976-10-07 | Takeda Chemical Industries Ltd | Process for producing granular organic fertilizer |
JPS5480358A (en) * | 1977-12-08 | 1979-06-27 | Shin Etsu Chem Co Ltd | Curable organopolysiloxane composition |
US4331970A (en) * | 1978-09-18 | 1982-05-25 | General Electric Company | Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation |
JPS5568659A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
JPS5588356A (en) * | 1978-12-27 | 1980-07-04 | Hitachi Ltd | Semiconductor device |
JPS55140249A (en) * | 1979-04-18 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
JPS5730336A (en) * | 1980-07-31 | 1982-02-18 | Hitachi Ltd | Semiconductor device |
JPS57114259A (en) * | 1981-01-07 | 1982-07-16 | Nec Corp | Semiconductor device |
EP0076656B1 (de) * | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden |
JPS5891663A (ja) * | 1981-11-27 | 1983-05-31 | Nec Corp | 半導体装置およびその製造方法 |
DE3222791A1 (de) * | 1982-06-18 | 1983-12-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleiter-bauelementen |
JPS5947745A (ja) * | 1982-09-10 | 1984-03-17 | Toshiba Chem Corp | 半導体装置 |
-
1982
- 1982-11-10 JP JP57196928A patent/JPS5987840A/ja active Granted
-
1983
- 1983-11-10 DE DE8383903569T patent/DE3379883D1/de not_active Expired
- 1983-11-10 WO PCT/JP1983/000405 patent/WO1984002036A1/ja active IP Right Grant
- 1983-11-10 EP EP83903569A patent/EP0124624B1/de not_active Expired
-
1988
- 1988-02-26 US US07/161,164 patent/US5008733A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5987840A (ja) | 1984-05-21 |
JPS6314499B2 (de) | 1988-03-31 |
WO1984002036A1 (fr) | 1984-05-24 |
EP0124624B1 (de) | 1989-05-17 |
US5008733A (en) | 1991-04-16 |
EP0124624A4 (de) | 1986-08-21 |
EP0124624A1 (de) | 1984-11-14 |
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