JPS5730336A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5730336A
JPS5730336A JP10428680A JP10428680A JPS5730336A JP S5730336 A JPS5730336 A JP S5730336A JP 10428680 A JP10428680 A JP 10428680A JP 10428680 A JP10428680 A JP 10428680A JP S5730336 A JPS5730336 A JP S5730336A
Authority
JP
Japan
Prior art keywords
radical
covered
silicone resin
semiconductor device
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10428680A
Other languages
Japanese (ja)
Other versions
JPS6156870B2 (en
Inventor
Takashi Yokoyama
Takae Ikeda
Yutaka Misawa
Masaaki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10428680A priority Critical patent/JPS5730336A/en
Publication of JPS5730336A publication Critical patent/JPS5730336A/en
Publication of JPS6156870B2 publication Critical patent/JPS6156870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To reduce the variation of the leak current on the subject semiconductor device by a method wherein the exposed part of the p-n junction on a semiconductor element is covered by the silicone resin consisting of organopolysiloxane, diorganopolysiloxane, platinum catalyzer and cyclic isocyanate compound. CONSTITUTION:The exposed part of the semiconductor element, whereon the p-n junction section of a thyristor and the like are exposed, is covered and protected by (a) organopolysiloxane having a vinyl radical or a allyl radical, (b) diorganopolysiloxane having at least two hydroxyl radicals in a molecule, (c) a platinum catalyzer and (d) silicone resin 6 which is a composition of cyclic isocyanate compound containing an alkoxy radical or an alkenile radical or the like. As a result, a high current and high withstand voltage semiconductor device, whereon the exposed surface of the p-n junction section is covered by the silicone resin of specific composition having least variation of leak current, can be manufactured.
JP10428680A 1980-07-31 1980-07-31 Semiconductor device Granted JPS5730336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10428680A JPS5730336A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10428680A JPS5730336A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5730336A true JPS5730336A (en) 1982-02-18
JPS6156870B2 JPS6156870B2 (en) 1986-12-04

Family

ID=14376680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10428680A Granted JPS5730336A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5730336A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987840A (en) * 1982-11-10 1984-05-21 Toray Silicone Co Ltd Semiconductor device
US5705425A (en) * 1992-05-28 1998-01-06 Fujitsu Limited Process for manufacturing semiconductor devices separated by an air-bridge
WO2006092324A1 (en) * 2005-03-03 2006-09-08 Wacker Chemie Ag Method for producing alkoxysilyl methyl isocyanurates
JP2014218634A (en) * 2013-05-10 2014-11-20 信越化学工業株式会社 Silicone hybrid resin composition and optical semiconductor device
CN107474066A (en) * 2017-08-30 2017-12-15 河南龙都石油化工有限公司 Azepine hexamethylene triketone of 1,3,5 N (trimethyl silicon substrate) methyl 1,3,5 and its preparation method and application

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987840A (en) * 1982-11-10 1984-05-21 Toray Silicone Co Ltd Semiconductor device
JPS6314499B2 (en) * 1982-11-10 1988-03-31 Toray Silicone Co
US5705425A (en) * 1992-05-28 1998-01-06 Fujitsu Limited Process for manufacturing semiconductor devices separated by an air-bridge
WO2006092324A1 (en) * 2005-03-03 2006-09-08 Wacker Chemie Ag Method for producing alkoxysilyl methyl isocyanurates
JP2014218634A (en) * 2013-05-10 2014-11-20 信越化学工業株式会社 Silicone hybrid resin composition and optical semiconductor device
CN107474066A (en) * 2017-08-30 2017-12-15 河南龙都石油化工有限公司 Azepine hexamethylene triketone of 1,3,5 N (trimethyl silicon substrate) methyl 1,3,5 and its preparation method and application

Also Published As

Publication number Publication date
JPS6156870B2 (en) 1986-12-04

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