DE3379883D1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE3379883D1
DE3379883D1 DE8383903569T DE3379883T DE3379883D1 DE 3379883 D1 DE3379883 D1 DE 3379883D1 DE 8383903569 T DE8383903569 T DE 8383903569T DE 3379883 T DE3379883 T DE 3379883T DE 3379883 D1 DE3379883 D1 DE 3379883D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383903569T
Other languages
German (de)
English (en)
Inventor
Katsutoshi Mine
Yoshitsugu Morita
Satoshi Miyamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Toray Silicone Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Silicone Co Ltd filed Critical Toray Silicone Co Ltd
Application granted granted Critical
Publication of DE3379883D1 publication Critical patent/DE3379883D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10W76/157—
    • H10W74/121—
    • H10W74/137—
    • H10W72/01515—
    • H10W72/075—
    • H10W72/522—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/5524—
    • H10W74/00—
    • H10W90/724—
    • H10W90/756—
DE8383903569T 1982-11-10 1983-11-10 Semiconductor device Expired DE3379883D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57196928A JPS5987840A (ja) 1982-11-10 1982-11-10 半導体装置
PCT/JP1983/000405 WO1984002036A1 (en) 1982-11-10 1983-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3379883D1 true DE3379883D1 (en) 1989-06-22

Family

ID=16365993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383903569T Expired DE3379883D1 (en) 1982-11-10 1983-11-10 Semiconductor device

Country Status (5)

Country Link
US (1) US5008733A (cg-RX-API-DMAC10.html)
EP (1) EP0124624B1 (cg-RX-API-DMAC10.html)
JP (1) JPS5987840A (cg-RX-API-DMAC10.html)
DE (1) DE3379883D1 (cg-RX-API-DMAC10.html)
WO (1) WO1984002036A1 (cg-RX-API-DMAC10.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230344A (ja) * 1985-04-05 1986-10-14 Toray Silicone Co Ltd 樹脂封止型半導体装置
US4777520A (en) * 1986-03-27 1988-10-11 Oki Electric Industry Co. Ltd. Heat-resistant plastic semiconductor device
JP2585006B2 (ja) * 1987-07-22 1997-02-26 東レ・ダウコーニング・シリコーン株式会社 樹脂封止型半導体装置およびその製造方法
EP0407585A4 (en) * 1988-07-15 1992-06-10 Toray Silicone Co. Ltd. Semiconductor device sealed with resin and a method of producing the same
JPH063819B2 (ja) * 1989-04-17 1994-01-12 セイコーエプソン株式会社 半導体装置の実装構造および実装方法
JPH03116857A (ja) * 1989-09-29 1991-05-17 Mitsui Petrochem Ind Ltd 発光または受光装置
JP2548625B2 (ja) * 1990-08-27 1996-10-30 シャープ株式会社 半導体装置の製造方法
JP3540356B2 (ja) * 1994-03-14 2004-07-07 東レ・ダウコーニング・シリコーン株式会社 コンフォーマルコーティング剤
JPH11219984A (ja) * 1997-11-06 1999-08-10 Sharp Corp 半導体装置パッケージおよびその製造方法ならびにそのための回路基板
JP2000119627A (ja) * 1998-10-12 2000-04-25 Dow Corning Toray Silicone Co Ltd 接着性硬化シリコーンシートの保存方法
EP1223612A4 (en) * 2000-05-12 2005-06-29 Matsushita Electric Industrial Co Ltd PRINTED CIRCUIT BOARD FOR MOUNTING A SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING THE MOUNTING STRUCTURE THEREOF
US6617674B2 (en) 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same
JP4844184B2 (ja) * 2006-03-17 2011-12-28 株式会社ジェイ・エム・エス アダプタ
JP2012238796A (ja) * 2011-05-13 2012-12-06 Panasonic Corp 半導体装置及び半導体装置の製造方法
ITUB20155681A1 (it) * 2015-11-18 2017-05-18 St Microelectronics Srl Dispositivo elettronico resistente a radiazioni e metodo per proteggere un dispositivo elettronico da radiazioni ionizzanti
WO2017180482A1 (en) * 2016-04-11 2017-10-19 Paradromics, Inc. Neural-interface probe and methods of packaging the same
WO2018183967A1 (en) 2017-03-30 2018-10-04 Paradromics, Inc. Patterned microwire bundles and methods of producing the same
WO2020070983A1 (ja) 2018-10-04 2020-04-09 光陽産業株式会社 医療用接続構造
US12171995B1 (en) 2021-10-07 2024-12-24 Paradromics, Inc. Methods for improved biocompatibility for human implanted medical devices

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527463B2 (cg-RX-API-DMAC10.html) * 1973-02-28 1980-07-21
JPS5067077A (cg-RX-API-DMAC10.html) * 1973-10-12 1975-06-05
JPS519576A (en) * 1974-07-12 1976-01-26 Sharp Kk Handotaisochino seizoho
JPS51114259A (en) * 1975-03-31 1976-10-07 Takeda Chemical Industries Ltd Process for producing granular organic fertilizer
JPS5480358A (en) * 1977-12-08 1979-06-27 Shin Etsu Chem Co Ltd Curable organopolysiloxane composition
US4331970A (en) * 1978-09-18 1982-05-25 General Electric Company Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation
JPS5568659A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Semiconductor device and manufacturing method thereof
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
JPS55140249A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5730336A (en) * 1980-07-31 1982-02-18 Hitachi Ltd Semiconductor device
JPS57114259A (en) * 1981-01-07 1982-07-16 Nec Corp Semiconductor device
EP0076656B1 (en) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
JPS5891663A (ja) * 1981-11-27 1983-05-31 Nec Corp 半導体装置およびその製造方法
DE3222791A1 (de) * 1982-06-18 1983-12-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiter-bauelementen
JPS5947745A (ja) * 1982-09-10 1984-03-17 Toshiba Chem Corp 半導体装置

Also Published As

Publication number Publication date
JPS5987840A (ja) 1984-05-21
US5008733A (en) 1991-04-16
WO1984002036A1 (en) 1984-05-24
EP0124624A4 (en) 1986-08-21
EP0124624B1 (en) 1989-05-17
EP0124624A1 (en) 1984-11-14
JPS6314499B2 (cg-RX-API-DMAC10.html) 1988-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition