DE3346803A1 - Halbleitervorrichtung und verfahren zu dessen herstellung - Google Patents

Halbleitervorrichtung und verfahren zu dessen herstellung

Info

Publication number
DE3346803A1
DE3346803A1 DE19833346803 DE3346803A DE3346803A1 DE 3346803 A1 DE3346803 A1 DE 3346803A1 DE 19833346803 DE19833346803 DE 19833346803 DE 3346803 A DE3346803 A DE 3346803A DE 3346803 A1 DE3346803 A1 DE 3346803A1
Authority
DE
Germany
Prior art keywords
protective film
semiconductor device
impurity
film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833346803
Other languages
German (de)
English (en)
Other versions
DE3346803C2 (enExample
Inventor
Shunichi Hiratsuka Kanagawa Hiraki
Kazuhiro Kawasaki Takimoto
Yoshikazu Chigasaki Kanagawa Usuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE3346803A1 publication Critical patent/DE3346803A1/de
Application granted granted Critical
Publication of DE3346803C2 publication Critical patent/DE3346803C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
DE19833346803 1982-12-24 1983-12-23 Halbleitervorrichtung und verfahren zu dessen herstellung Granted DE3346803A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232953A JPS59119733A (ja) 1982-12-24 1982-12-24 半導体装置

Publications (2)

Publication Number Publication Date
DE3346803A1 true DE3346803A1 (de) 1984-07-05
DE3346803C2 DE3346803C2 (enExample) 1991-08-29

Family

ID=16947446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833346803 Granted DE3346803A1 (de) 1982-12-24 1983-12-23 Halbleitervorrichtung und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US4647472A (enExample)
JP (1) JPS59119733A (enExample)
DE (1) DE3346803A1 (enExample)
GB (1) GB2132817B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671765A1 (en) * 1994-03-11 1995-09-13 Ramtron International Corporation Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like
DE4428524A1 (de) * 1994-08-11 1997-12-04 Eupec Gmbh & Co Kg Halbleiterbauelement mit Passivierungsschicht
DE102017103620A1 (de) 2017-02-22 2018-08-23 Infineon Technologies Ag Halbleitervorrichtung, Mikrofon und Verfahren zum Bilden einer Halbleitervorrichtung

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
US4842888A (en) * 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
JPH01283838A (ja) * 1988-05-10 1989-11-15 Toshiba Corp 半導体装置
US4981071A (en) * 1988-11-03 1991-01-01 Leybold Aktiengesellschaft Machine element with coating
US5011706A (en) * 1989-04-12 1991-04-30 Dow Corning Corporation Method of forming coatings containing amorphous silicon carbide
US5198298A (en) * 1989-10-24 1993-03-30 Advanced Micro Devices, Inc. Etch stop layer using polymers
US5010355A (en) * 1989-12-26 1991-04-23 Xerox Corporation Ink jet printhead having ionic passivation of electrical circuitry
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
US5818071A (en) * 1995-02-02 1998-10-06 Dow Corning Corporation Silicon carbide metal diffusion barrier layer
DE19507130C2 (de) * 1995-03-01 1997-08-21 Daimler Benz Ag Passivierung von SiC-Bauelementen
US5530581A (en) * 1995-05-31 1996-06-25 Eic Laboratories, Inc. Protective overlayer material and electro-optical coating using same
US5755759A (en) * 1996-03-14 1998-05-26 Eic Laboratories, Inc. Biomedical device with a protective overlayer
US5902131A (en) * 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
US5926740A (en) * 1997-10-27 1999-07-20 Micron Technology, Inc. Graded anti-reflective coating for IC lithography
GB0001179D0 (en) 2000-01-19 2000-03-08 Trikon Holdings Ltd Methods & apparatus for forming a film on a substrate
GB0129567D0 (en) * 2001-12-11 2002-01-30 Trikon Technologies Ltd Diffusion barrier
CN100570872C (zh) * 2002-05-24 2009-12-16 独立行政法人产业技术综合研究所 电信号传输线
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9929038B2 (en) * 2013-03-07 2018-03-27 Analog Devices Global Insulating structure, a method of forming an insulating structure, and a chip scale isolator including such an insulating structure
US10204732B2 (en) 2015-10-23 2019-02-12 Analog Devices Global Dielectric stack, an isolator device and method of forming an isolator device
US9941565B2 (en) 2015-10-23 2018-04-10 Analog Devices Global Isolator and method of forming an isolator

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485666A (en) * 1964-05-08 1969-12-23 Int Standard Electric Corp Method of forming a silicon nitride coating
DE1589866A1 (de) * 1966-12-01 1971-03-04 Gen Electric Halbleiterbauelement mit einem Schutzueberzug und Verfahren zu seiner Herstellung
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
DE3000802A1 (de) * 1980-01-11 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung vn silizium
DE3208494A1 (de) * 1981-03-09 1982-09-30 Canon K.K., Tokyo Verfahren zur herstellung eines fotoleitfaehigen elements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1566072A (en) * 1977-03-28 1980-04-30 Tokyo Shibaura Electric Co Semiconductor device
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
JPS5840831A (ja) * 1982-08-13 1983-03-09 Hitachi Ltd 半導体装置
US4544423A (en) * 1984-02-10 1985-10-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon semiconductor and process for same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485666A (en) * 1964-05-08 1969-12-23 Int Standard Electric Corp Method of forming a silicon nitride coating
DE1589866A1 (de) * 1966-12-01 1971-03-04 Gen Electric Halbleiterbauelement mit einem Schutzueberzug und Verfahren zu seiner Herstellung
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
DE3000802A1 (de) * 1980-01-11 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung vn silizium
DE3208494A1 (de) * 1981-03-09 1982-09-30 Canon K.K., Tokyo Verfahren zur herstellung eines fotoleitfaehigen elements

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM-Technical Disclosure Bulletin, Bd. 13, No. 12, Mai 1971, S. 3658 *
IBM-Technical Disclosure Bulletin, Br. 18, No. 12, Mai 1976, S. 4008 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671765A1 (en) * 1994-03-11 1995-09-13 Ramtron International Corporation Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like
US5578867A (en) * 1994-03-11 1996-11-26 Ramtron International Corporation Passivation method and structure using hard ceramic materials or the like
DE4428524A1 (de) * 1994-08-11 1997-12-04 Eupec Gmbh & Co Kg Halbleiterbauelement mit Passivierungsschicht
DE102017103620A1 (de) 2017-02-22 2018-08-23 Infineon Technologies Ag Halbleitervorrichtung, Mikrofon und Verfahren zum Bilden einer Halbleitervorrichtung
US10858246B2 (en) 2017-02-22 2020-12-08 Infineon Technologies Ag Semiconductor device, microphone and methods for forming a semiconductor device
DE102017103620B4 (de) 2017-02-22 2022-01-05 Infineon Technologies Ag Halbleitervorrichtung, Mikrofon und Verfahren zum Bilden einer Halbleitervorrichtung
US11352253B2 (en) 2017-02-22 2022-06-07 Infineon Technologies Ag Semiconductor device, microphone and methods for forming a semiconductor device

Also Published As

Publication number Publication date
JPH0416938B2 (enExample) 1992-03-25
US4647472A (en) 1987-03-03
GB8333893D0 (en) 1984-02-01
GB2132817B (en) 1987-04-29
DE3346803C2 (enExample) 1991-08-29
GB2132817A (en) 1984-07-11
JPS59119733A (ja) 1984-07-11

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee