JPS59119733A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59119733A
JPS59119733A JP57232953A JP23295382A JPS59119733A JP S59119733 A JPS59119733 A JP S59119733A JP 57232953 A JP57232953 A JP 57232953A JP 23295382 A JP23295382 A JP 23295382A JP S59119733 A JPS59119733 A JP S59119733A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
protective film
silicon carbide
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57232953A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0416938B2 (enExample
Inventor
Shunichi Kai
開　俊一
Kiichi Usuki
臼木　喜一
Kazuhiro Takimoto
滝本　一浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57232953A priority Critical patent/JPS59119733A/ja
Priority to GB08333893A priority patent/GB2132817B/en
Priority to DE19833346803 priority patent/DE3346803A1/de
Publication of JPS59119733A publication Critical patent/JPS59119733A/ja
Priority to US06/758,854 priority patent/US4647472A/en
Publication of JPH0416938B2 publication Critical patent/JPH0416938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
JP57232953A 1982-12-24 1982-12-24 半導体装置 Granted JPS59119733A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57232953A JPS59119733A (ja) 1982-12-24 1982-12-24 半導体装置
GB08333893A GB2132817B (en) 1982-12-24 1983-12-20 Semiconductor device and process of producing the same
DE19833346803 DE3346803A1 (de) 1982-12-24 1983-12-23 Halbleitervorrichtung und verfahren zu dessen herstellung
US06/758,854 US4647472A (en) 1982-12-24 1985-07-26 Process of producing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232953A JPS59119733A (ja) 1982-12-24 1982-12-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS59119733A true JPS59119733A (ja) 1984-07-11
JPH0416938B2 JPH0416938B2 (enExample) 1992-03-25

Family

ID=16947446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57232953A Granted JPS59119733A (ja) 1982-12-24 1982-12-24 半導体装置

Country Status (4)

Country Link
US (1) US4647472A (enExample)
JP (1) JPS59119733A (enExample)
DE (1) DE3346803A1 (enExample)
GB (1) GB2132817B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
US4842888A (en) * 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
JPH01283838A (ja) * 1988-05-10 1989-11-15 Toshiba Corp 半導体装置
US4981071A (en) * 1988-11-03 1991-01-01 Leybold Aktiengesellschaft Machine element with coating
US5011706A (en) * 1989-04-12 1991-04-30 Dow Corning Corporation Method of forming coatings containing amorphous silicon carbide
US5198298A (en) * 1989-10-24 1993-03-30 Advanced Micro Devices, Inc. Etch stop layer using polymers
US5010355A (en) * 1989-12-26 1991-04-23 Xerox Corporation Ink jet printhead having ionic passivation of electrical circuitry
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
US5438023A (en) * 1994-03-11 1995-08-01 Ramtron International Corporation Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like
DE4428524A1 (de) * 1994-08-11 1997-12-04 Eupec Gmbh & Co Kg Halbleiterbauelement mit Passivierungsschicht
US5818071A (en) * 1995-02-02 1998-10-06 Dow Corning Corporation Silicon carbide metal diffusion barrier layer
DE19507130C2 (de) * 1995-03-01 1997-08-21 Daimler Benz Ag Passivierung von SiC-Bauelementen
US5530581A (en) * 1995-05-31 1996-06-25 Eic Laboratories, Inc. Protective overlayer material and electro-optical coating using same
US5755759A (en) * 1996-03-14 1998-05-26 Eic Laboratories, Inc. Biomedical device with a protective overlayer
US5902131A (en) * 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
US5926740A (en) * 1997-10-27 1999-07-20 Micron Technology, Inc. Graded anti-reflective coating for IC lithography
GB0001179D0 (en) 2000-01-19 2000-03-08 Trikon Holdings Ltd Methods & apparatus for forming a film on a substrate
GB0129567D0 (en) * 2001-12-11 2002-01-30 Trikon Technologies Ltd Diffusion barrier
CN100570872C (zh) * 2002-05-24 2009-12-16 独立行政法人产业技术综合研究所 电信号传输线
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9929038B2 (en) * 2013-03-07 2018-03-27 Analog Devices Global Insulating structure, a method of forming an insulating structure, and a chip scale isolator including such an insulating structure
US10204732B2 (en) 2015-10-23 2019-02-12 Analog Devices Global Dielectric stack, an isolator device and method of forming an isolator device
US9941565B2 (en) 2015-10-23 2018-04-10 Analog Devices Global Isolator and method of forming an isolator
DE102017103620B4 (de) 2017-02-22 2022-01-05 Infineon Technologies Ag Halbleitervorrichtung, Mikrofon und Verfahren zum Bilden einer Halbleitervorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840831A (ja) * 1982-08-13 1983-03-09 Hitachi Ltd 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
GB1211354A (en) * 1966-12-01 1970-11-04 Gen Electric Improvements relating to passivated semiconductor devices
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
GB1566072A (en) * 1977-03-28 1980-04-30 Tokyo Shibaura Electric Co Semiconductor device
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
DE3000802A1 (de) * 1980-01-11 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung vn silizium
DE3208494C2 (de) * 1981-03-09 1993-09-30 Canon Kk Verfahren zur Herstellung eines fotoleitfähigen Elements
US4544423A (en) * 1984-02-10 1985-10-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon semiconductor and process for same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840831A (ja) * 1982-08-13 1983-03-09 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0416938B2 (enExample) 1992-03-25
DE3346803A1 (de) 1984-07-05
US4647472A (en) 1987-03-03
GB8333893D0 (en) 1984-02-01
GB2132817B (en) 1987-04-29
DE3346803C2 (enExample) 1991-08-29
GB2132817A (en) 1984-07-11

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