DE3340584A1 - Halbleiterbauelement und verfahren zum herstellen des bauelements - Google Patents

Halbleiterbauelement und verfahren zum herstellen des bauelements

Info

Publication number
DE3340584A1
DE3340584A1 DE19833340584 DE3340584A DE3340584A1 DE 3340584 A1 DE3340584 A1 DE 3340584A1 DE 19833340584 DE19833340584 DE 19833340584 DE 3340584 A DE3340584 A DE 3340584A DE 3340584 A1 DE3340584 A1 DE 3340584A1
Authority
DE
Germany
Prior art keywords
silicon layer
silicon
layers
films
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833340584
Other languages
German (de)
English (en)
Other versions
DE3340584C2 (cg-RX-API-DMAC10.html
Inventor
Gunther 8910 Affoltern Harbeke
Liselotte 8954 Geroldswil Krausbauer
Edgar Felix 8908 Hedingen Steigmeier
Alois Erhard 8965 Berikon Widmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE3340584A1 publication Critical patent/DE3340584A1/de
Application granted granted Critical
Publication of DE3340584C2 publication Critical patent/DE3340584C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P14/416—
    • H10P95/00—

Landscapes

  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
DE19833340584 1982-11-12 1983-11-10 Halbleiterbauelement und verfahren zum herstellen des bauelements Granted DE3340584A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44137182A 1982-11-12 1982-11-12

Publications (2)

Publication Number Publication Date
DE3340584A1 true DE3340584A1 (de) 1984-05-17
DE3340584C2 DE3340584C2 (cg-RX-API-DMAC10.html) 1993-02-11

Family

ID=23752618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833340584 Granted DE3340584A1 (de) 1982-11-12 1983-11-10 Halbleiterbauelement und verfahren zum herstellen des bauelements

Country Status (6)

Country Link
JP (1) JPH0652715B2 (cg-RX-API-DMAC10.html)
DE (1) DE3340584A1 (cg-RX-API-DMAC10.html)
FR (1) FR2536210B1 (cg-RX-API-DMAC10.html)
GB (1) GB2130009B (cg-RX-API-DMAC10.html)
IT (1) IT1171797B (cg-RX-API-DMAC10.html)
SE (1) SE500463C2 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0429885A3 (en) * 1989-12-01 1993-11-03 Texas Instruments Inc Method and apparatus for in-situ doping of deposited silicon

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
US4789883A (en) * 1985-12-17 1988-12-06 Advanced Micro Devices, Inc. Integrated circuit structure having gate electrode and underlying oxide and method of making same
EP0253014B1 (en) * 1986-07-18 1990-04-11 Nippondenso Co., Ltd. Method of manufacturing a monvolatile semiconductor memory apparatus with writing and erasing capability
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
JP2690917B2 (ja) * 1987-12-07 1997-12-17 株式会社日立製作所 薄膜形成方法及び半導体装置の製造方法
FR2627012B1 (fr) * 1988-02-10 1990-06-01 France Etat Procede de depot d'une couche polycristalline a gros grains, couche obtenue et transistor pourvu d'une telle couche
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
JP2508948B2 (ja) * 1991-06-21 1996-06-19 日本電気株式会社 半導体装置の製造方法
GB2293691B (en) * 1991-09-07 1996-06-19 Samsung Electronics Co Ltd Semiconductor memory devices
KR960026821A (ko) * 1994-12-20 1996-07-22 김주용 캐패시터 제조방법
KR100295718B1 (ko) * 1995-06-06 2001-09-03 아사히 가세이 마이크로시스템 가부시끼가이샤 반도체장치및그의제조방법
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536174B2 (de) * 1975-08-13 1978-10-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente und Vorrichtung zur Durchführung des Verfahrens
EP0023021A1 (en) * 1979-07-20 1981-01-28 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
GB1602386A (en) * 1977-05-18 1981-11-11 Eastman Kodak Co Method of manufacturing semiconductor devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558815B2 (cg-RX-API-DMAC10.html) * 1973-06-29 1980-03-06
JPS5249782A (en) * 1975-10-20 1977-04-21 Fujitsu Ltd Process for production of semiconductor device
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536174B2 (de) * 1975-08-13 1978-10-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente und Vorrichtung zur Durchführung des Verfahrens
GB1602386A (en) * 1977-05-18 1981-11-11 Eastman Kodak Co Method of manufacturing semiconductor devices
EP0023021A1 (en) * 1979-07-20 1981-01-28 Hitachi, Ltd. Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TANDON, J.L., HARRISON, H.B., NEOH, C.L., SHORT, K.T., WILLIAMS, J.S.: The annealing behavior of antimony implanted polycrystalline silicon. In: Appl. Phys. Lett., Vol. 40(3), Feb. 1982, S. 228-230 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0429885A3 (en) * 1989-12-01 1993-11-03 Texas Instruments Inc Method and apparatus for in-situ doping of deposited silicon

Also Published As

Publication number Publication date
SE8306070L (sv) 1984-05-13
GB2130009B (en) 1986-04-03
FR2536210A1 (fr) 1984-05-18
JPH0652715B2 (ja) 1994-07-06
DE3340584C2 (cg-RX-API-DMAC10.html) 1993-02-11
IT1171797B (it) 1987-06-10
SE500463C2 (sv) 1994-06-27
IT8323690A0 (it) 1983-11-11
SE8306070D0 (sv) 1983-11-04
GB8329381D0 (en) 1983-12-07
GB2130009A (en) 1984-05-23
JPS59100561A (ja) 1984-06-09
FR2536210B1 (fr) 1986-03-28

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition