FR2536210B1 - Couches en silicium polycristallin pour dispositifs a semi-conducteurs et procede de formation d'un dispositif a semi-conducteurs - Google Patents

Couches en silicium polycristallin pour dispositifs a semi-conducteurs et procede de formation d'un dispositif a semi-conducteurs

Info

Publication number
FR2536210B1
FR2536210B1 FR8317929A FR8317929A FR2536210B1 FR 2536210 B1 FR2536210 B1 FR 2536210B1 FR 8317929 A FR8317929 A FR 8317929A FR 8317929 A FR8317929 A FR 8317929A FR 2536210 B1 FR2536210 B1 FR 2536210B1
Authority
FR
France
Prior art keywords
forming
polycrystalline silicon
silicon layers
semiconductor device
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8317929A
Other languages
English (en)
Other versions
FR2536210A1 (fr
Inventor
Alois Erhard Widmer
Gunther Harbeke
Liselotte Krausbauer
Edgar Felix Steigmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2536210A1 publication Critical patent/FR2536210A1/fr
Application granted granted Critical
Publication of FR2536210B1 publication Critical patent/FR2536210B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
FR8317929A 1982-11-12 1983-11-10 Couches en silicium polycristallin pour dispositifs a semi-conducteurs et procede de formation d'un dispositif a semi-conducteurs Expired FR2536210B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44137182A 1982-11-12 1982-11-12

Publications (2)

Publication Number Publication Date
FR2536210A1 FR2536210A1 (fr) 1984-05-18
FR2536210B1 true FR2536210B1 (fr) 1986-03-28

Family

ID=23752618

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8317929A Expired FR2536210B1 (fr) 1982-11-12 1983-11-10 Couches en silicium polycristallin pour dispositifs a semi-conducteurs et procede de formation d'un dispositif a semi-conducteurs

Country Status (6)

Country Link
JP (1) JPH0652715B2 (fr)
DE (1) DE3340584A1 (fr)
FR (1) FR2536210B1 (fr)
GB (1) GB2130009B (fr)
IT (1) IT1171797B (fr)
SE (1) SE500463C2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
US4789883A (en) * 1985-12-17 1988-12-06 Advanced Micro Devices, Inc. Integrated circuit structure having gate electrode and underlying oxide and method of making same
EP0253014B1 (fr) * 1986-07-18 1990-04-11 Nippondenso Co., Ltd. Méthode de fabrication d'un dispositif de mémoire non volatile à semi-conducteur avec possibilité d'écriture et d'effacement
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
JP2690917B2 (ja) * 1987-12-07 1997-12-17 株式会社日立製作所 薄膜形成方法及び半導体装置の製造方法
FR2627012B1 (fr) * 1988-02-10 1990-06-01 France Etat Procede de depot d'une couche polycristalline a gros grains, couche obtenue et transistor pourvu d'une telle couche
EP0429885B1 (fr) * 1989-12-01 1997-06-04 Texas Instruments Incorporated Procédé du dopage in-situ du silicium déposé
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
JP2508948B2 (ja) * 1991-06-21 1996-06-19 日本電気株式会社 半導体装置の製造方法
GB2293691B (en) * 1991-09-07 1996-06-19 Samsung Electronics Co Ltd Semiconductor memory devices
KR960026821A (ko) * 1994-12-20 1996-07-22 김주용 캐패시터 제조방법
KR100295718B1 (ko) * 1995-06-06 2001-09-03 아사히 가세이 마이크로시스템 가부시끼가이샤 반도체장치및그의제조방법
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558815B2 (fr) * 1973-06-29 1980-03-06
DE2536174C3 (de) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente
JPS5249782A (en) * 1975-10-20 1977-04-21 Fujitsu Ltd Process for production of semiconductor device
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor

Also Published As

Publication number Publication date
FR2536210A1 (fr) 1984-05-18
IT8323690A0 (it) 1983-11-11
SE500463C2 (sv) 1994-06-27
IT1171797B (it) 1987-06-10
GB8329381D0 (en) 1983-12-07
JPH0652715B2 (ja) 1994-07-06
DE3340584A1 (de) 1984-05-17
GB2130009A (en) 1984-05-23
GB2130009B (en) 1986-04-03
SE8306070D0 (sv) 1983-11-04
SE8306070L (sv) 1984-05-13
JPS59100561A (ja) 1984-06-09
DE3340584C2 (fr) 1993-02-11

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