GB2290908B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB2290908B
GB2290908B GB9514098A GB9514098A GB2290908B GB 2290908 B GB2290908 B GB 2290908B GB 9514098 A GB9514098 A GB 9514098A GB 9514098 A GB9514098 A GB 9514098A GB 2290908 B GB2290908 B GB 2290908B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9514098A
Other versions
GB2290908A (en
GB9514098D0 (en
Inventor
Dae-Je Chin
Tae-Young Chung
Young-Woo Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9218898A external-priority patent/GB2259406B/en
Publication of GB9514098D0 publication Critical patent/GB9514098D0/en
Publication of GB2290908A publication Critical patent/GB2290908A/en
Application granted granted Critical
Publication of GB2290908B publication Critical patent/GB2290908B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9514098A 1991-09-07 1992-09-07 Semiconductor memory device Expired - Fee Related GB2290908B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR910015626 1991-09-07
KR920005409 1992-03-31
GB9218898A GB2259406B (en) 1991-09-07 1992-09-07 Semiconductor memory devices

Publications (3)

Publication Number Publication Date
GB9514098D0 GB9514098D0 (en) 1995-09-13
GB2290908A GB2290908A (en) 1996-01-10
GB2290908B true GB2290908B (en) 1996-05-01

Family

ID=27266354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9514098A Expired - Fee Related GB2290908B (en) 1991-09-07 1992-09-07 Semiconductor memory device
GB9521898A Expired - Fee Related GB2293691B (en) 1991-09-07 1992-09-07 Semiconductor memory devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9521898A Expired - Fee Related GB2293691B (en) 1991-09-07 1992-09-07 Semiconductor memory devices

Country Status (1)

Country Link
GB (2) GB2290908B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW373320B (en) * 1996-05-27 1999-11-01 United Microelectronics Corporaiton Structure and production method of capacitor of dynamic RAM
EP0813241A1 (en) * 1996-06-12 1997-12-17 United Microelectronics Corporation Storage capacitor for DRAM memory cell and the process of fabricating the same
JP2930016B2 (en) * 1996-07-04 1999-08-03 日本電気株式会社 Method for manufacturing semiconductor device
CN116234295B (en) * 2021-12-08 2024-03-15 北京超弦存储器研究院 Dynamic random access memory unit, preparation method thereof and dynamic random access memory

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130009A (en) * 1982-11-12 1984-05-23 Rca Corp Polycrystalline silicon layers for semiconductor devices
EP0436491A1 (en) * 1990-01-03 1991-07-10 Micron Technology, Inc. Dram cell having a texturized polysilicon lower capacitor plate for increased capacitance
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
EP0448374A1 (en) * 1990-03-20 1991-09-25 Nec Corporation Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
GB2250377A (en) * 1990-11-29 1992-06-03 Samsung Electronics Co Ltd Method for manufacturing a semiconductor device with villus type capacitor
EP0521644A1 (en) * 1991-06-21 1993-01-07 Nec Corporation Method of manufacturing polysilicon film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930009593B1 (en) * 1991-01-30 1993-10-07 삼성전자 주식회사 Lsi semiconductor memory device and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130009A (en) * 1982-11-12 1984-05-23 Rca Corp Polycrystalline silicon layers for semiconductor devices
EP0436491A1 (en) * 1990-01-03 1991-07-10 Micron Technology, Inc. Dram cell having a texturized polysilicon lower capacitor plate for increased capacitance
EP0448374A1 (en) * 1990-03-20 1991-09-25 Nec Corporation Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
GB2250377A (en) * 1990-11-29 1992-06-03 Samsung Electronics Co Ltd Method for manufacturing a semiconductor device with villus type capacitor
EP0521644A1 (en) * 1991-06-21 1993-01-07 Nec Corporation Method of manufacturing polysilicon film

Also Published As

Publication number Publication date
GB2290908A (en) 1996-01-10
GB9521898D0 (en) 1996-01-03
GB9514098D0 (en) 1995-09-13
GB2293691B (en) 1996-06-19
GB2293691A (en) 1996-04-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090907