EP0486902A3 - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

Info

Publication number
EP0486902A3
EP0486902A3 EP19910119077 EP91119077A EP0486902A3 EP 0486902 A3 EP0486902 A3 EP 0486902A3 EP 19910119077 EP19910119077 EP 19910119077 EP 91119077 A EP91119077 A EP 91119077A EP 0486902 A3 EP0486902 A3 EP 0486902A3
Authority
EP
European Patent Office
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19910119077
Other versions
EP0486902A2 (en
Inventor
James F. Jaffe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of EP0486902A2 publication Critical patent/EP0486902A2/en
Publication of EP0486902A3 publication Critical patent/EP0486902A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
EP19910119077 1990-11-21 1991-11-08 Semiconductor memory device Withdrawn EP0486902A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/616,676 US5031143A (en) 1990-11-21 1990-11-21 Preamplifier for ferroelectric memory device sense amplifier
US616676 1990-11-21

Publications (2)

Publication Number Publication Date
EP0486902A2 EP0486902A2 (en) 1992-05-27
EP0486902A3 true EP0486902A3 (en) 1993-02-03

Family

ID=24470516

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19910119077 Withdrawn EP0486902A3 (en) 1990-11-21 1991-11-08 Semiconductor memory device

Country Status (4)

Country Link
US (1) US5031143A (en)
EP (1) EP0486902A3 (en)
JP (1) JPH04285788A (en)
KR (1) KR100230609B1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
JPH0677434A (en) * 1992-08-27 1994-03-18 Hitachi Ltd Semiconductor memory device
US5372859A (en) * 1992-10-20 1994-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
US5432731A (en) * 1993-03-08 1995-07-11 Motorola, Inc. Ferroelectric memory cell and method of sensing and writing the polarization state thereof
US5430671A (en) * 1993-04-09 1995-07-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
US5381364A (en) 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
US5373463A (en) * 1993-07-06 1994-12-13 Motorola Inc. Ferroelectric nonvolatile random access memory having drive line segments
JP3186485B2 (en) * 1995-01-04 2001-07-11 日本電気株式会社 Ferroelectric memory device and operation control method thereof
JP2748873B2 (en) * 1995-01-04 1998-05-13 日本電気株式会社 Ferroelectric memory device and operation control method thereof
US5579257A (en) * 1995-08-31 1996-11-26 Motorola, Inc. Method for reading and restoring data in a data storage element
DE69630758T2 (en) * 1995-09-08 2004-05-27 Fujitsu Ltd., Kawasaki Ferroelectric memory and data reading method from this memory
US5592411A (en) * 1995-11-02 1997-01-07 Motorola, Inc. Non-volatile register and method for accessing data therein
US5724283A (en) * 1996-06-14 1998-03-03 Motorola, Inc. Data storage element and method for restoring data
JP3741852B2 (en) * 1998-01-22 2006-02-01 ローム株式会社 Data storage device
KR100301822B1 (en) * 1999-07-21 2001-11-01 김영환 Sensing amp of nonvolatile ferroelectric memory device
EP1325500B1 (en) * 2000-09-25 2005-12-28 Symetrix Corporation Ferroelectric memory and method of operating same
US6563753B1 (en) * 2001-11-16 2003-05-13 Agilent Technologies, Inc. Sense amplifier with independent write-back capability for ferroelectric random-access memories
US6459609B1 (en) * 2001-12-13 2002-10-01 Ramtron International Corporation Self referencing 1T/1C ferroelectric random access memory
US7554867B2 (en) * 2006-01-27 2009-06-30 Texas Instruments Incorporated Capacitor boost sensing
US10446214B1 (en) 2018-08-13 2019-10-15 Micron Technology, Inc. Sense amplifier with split capacitors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025234A1 (en) * 1979-08-09 1981-03-18 PATELHOLD Patentverwertungs- & Elektro-Holding AG Low frequency power amplifier and its use in an amplitude modulated transmitter
US4321661A (en) * 1980-12-23 1982-03-23 Gte Laboratories Incorporated Apparatus for charging a capacitor
US4858193A (en) * 1987-06-23 1989-08-15 Mitsubishi Denki Kabushiki Kaisha Preamplification method and apparatus for dram sense amplifiers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910708A (en) * 1987-07-02 1990-03-20 Ramtron Corporation Dram with programmable capacitance divider
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4918654A (en) * 1987-07-02 1990-04-17 Ramtron Corporation SRAM with programmable capacitance divider

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025234A1 (en) * 1979-08-09 1981-03-18 PATELHOLD Patentverwertungs- & Elektro-Holding AG Low frequency power amplifier and its use in an amplitude modulated transmitter
US4321661A (en) * 1980-12-23 1982-03-23 Gte Laboratories Incorporated Apparatus for charging a capacitor
US4858193A (en) * 1987-06-23 1989-08-15 Mitsubishi Denki Kabushiki Kaisha Preamplification method and apparatus for dram sense amplifiers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN. vol. 19, no. 2, July 1976, NEW YORK US pages 710 - 713 SCHUSTER 'SENSE AMPLIFIER' *

Also Published As

Publication number Publication date
KR920010640A (en) 1992-06-26
JPH04285788A (en) 1992-10-09
US5031143A (en) 1991-07-09
KR100230609B1 (en) 1999-11-15
EP0486902A2 (en) 1992-05-27

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