GB9521898D0 - Semiconductor memory devices - Google Patents

Semiconductor memory devices

Info

Publication number
GB9521898D0
GB9521898D0 GBGB9521898.8A GB9521898A GB9521898D0 GB 9521898 D0 GB9521898 D0 GB 9521898D0 GB 9521898 A GB9521898 A GB 9521898A GB 9521898 D0 GB9521898 D0 GB 9521898D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor memory
memory devices
devices
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9521898.8A
Other versions
GB2293691A (en
GB2293691B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9218898A external-priority patent/GB2259406B/en
Publication of GB9521898D0 publication Critical patent/GB9521898D0/en
Publication of GB2293691A publication Critical patent/GB2293691A/en
Application granted granted Critical
Publication of GB2293691B publication Critical patent/GB2293691B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9521898A 1991-09-07 1992-09-07 Semiconductor memory devices Expired - Fee Related GB2293691B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR910015626 1991-09-07
KR920005409 1992-03-31
GB9218898A GB2259406B (en) 1991-09-07 1992-09-07 Semiconductor memory devices

Publications (3)

Publication Number Publication Date
GB9521898D0 true GB9521898D0 (en) 1996-01-03
GB2293691A GB2293691A (en) 1996-04-03
GB2293691B GB2293691B (en) 1996-06-19

Family

ID=27266354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9514098A Expired - Fee Related GB2290908B (en) 1991-09-07 1992-09-07 Semiconductor memory device
GB9521898A Expired - Fee Related GB2293691B (en) 1991-09-07 1992-09-07 Semiconductor memory devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9514098A Expired - Fee Related GB2290908B (en) 1991-09-07 1992-09-07 Semiconductor memory device

Country Status (1)

Country Link
GB (2) GB2290908B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW373320B (en) * 1996-05-27 1999-11-01 United Microelectronics Corporaiton Structure and production method of capacitor of dynamic RAM
EP0813241A1 (en) * 1996-06-12 1997-12-17 United Microelectronics Corporation Storage capacitor for DRAM memory cell and the process of fabricating the same
JP2930016B2 (en) * 1996-07-04 1999-08-03 日本電気株式会社 Method for manufacturing semiconductor device
CN116234295B (en) * 2021-12-08 2024-03-15 北京超弦存储器研究院 Dynamic random access memory unit, preparation method thereof and dynamic random access memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130009B (en) * 1982-11-12 1986-04-03 Rca Corp Polycrystalline silicon layers for semiconductor devices
US5043780A (en) * 1990-01-03 1991-08-27 Micron Technology, Inc. DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
KR930009583B1 (en) * 1990-11-29 1993-10-07 삼성전자 주식회사 Method for manufacturing a semiconductor device with villus-type capacitor
KR930009593B1 (en) * 1991-01-30 1993-10-07 삼성전자 주식회사 Lsi semiconductor memory device and manufacturing method thereof
JP2508948B2 (en) * 1991-06-21 1996-06-19 日本電気株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
GB9514098D0 (en) 1995-09-13
GB2290908A (en) 1996-01-10
GB2290908B (en) 1996-05-01
GB2293691A (en) 1996-04-03
GB2293691B (en) 1996-06-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090907