DE3311463A1 - Photoempfindliches element - Google Patents

Photoempfindliches element

Info

Publication number
DE3311463A1
DE3311463A1 DE19833311463 DE3311463A DE3311463A1 DE 3311463 A1 DE3311463 A1 DE 3311463A1 DE 19833311463 DE19833311463 DE 19833311463 DE 3311463 A DE3311463 A DE 3311463A DE 3311463 A1 DE3311463 A1 DE 3311463A1
Authority
DE
Germany
Prior art keywords
layer
photoconductive
thickness
amorphous silicon
microns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833311463
Other languages
German (de)
English (en)
Other versions
DE3311463C2 (enExample
Inventor
Takao Sakai Osaka Kawamura
Masazumi Amagasaki Hyogo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Kyocera Corp
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57054566A external-priority patent/JPS58171054A/ja
Priority claimed from JP57054565A external-priority patent/JPS58171053A/ja
Application filed by Kyocera Corp, Minolta Co Ltd filed Critical Kyocera Corp
Publication of DE3311463A1 publication Critical patent/DE3311463A1/de
Application granted granted Critical
Publication of DE3311463C2 publication Critical patent/DE3311463C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19833311463 1982-03-31 1983-03-29 Photoempfindliches element Granted DE3311463A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57054566A JPS58171054A (ja) 1982-03-31 1982-03-31 感光体
JP57054565A JPS58171053A (ja) 1982-03-31 1982-03-31 感光体

Publications (2)

Publication Number Publication Date
DE3311463A1 true DE3311463A1 (de) 1983-10-13
DE3311463C2 DE3311463C2 (enExample) 1988-04-07

Family

ID=26395334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833311463 Granted DE3311463A1 (de) 1982-03-31 1983-03-29 Photoempfindliches element

Country Status (2)

Country Link
US (1) US4491626A (enExample)
DE (1) DE3311463A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2551562A1 (enExample) * 1983-09-05 1985-03-08 Canon Kk
DE3439707A1 (de) * 1983-10-31 1985-05-15 Canon K.K., Tokio/Tokyo Fotoleitfaehiges aufzeichnungsmaterial
DE3536089A1 (de) * 1984-10-11 1986-04-17 Takao Sakai Osaka Kawamura Elektrophotographisch empfindliches element
DE3610401A1 (de) * 1985-03-28 1987-02-12 Sumitomo Electric Industries Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird
EP0262807A1 (en) * 1986-09-03 1988-04-06 Hitachi, Ltd. Electrophotographic sensitized body
EP0227388A3 (en) * 1985-12-11 1988-11-30 Canon Kabushiki Kaisha Electrophotographic photosensitive member process and apparatus for the preparation thereof

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
US4569894A (en) * 1983-01-14 1986-02-11 Canon Kabushiki Kaisha Photoconductive member comprising germanium atoms
JPS59193463A (ja) * 1983-04-18 1984-11-02 Canon Inc 電子写真用光導電部材
US4532198A (en) * 1983-05-09 1985-07-30 Canon Kabushiki Kaisha Photoconductive member
DE3420741C2 (de) * 1983-06-02 1996-03-28 Minolta Camera Kk Elektrophotographisches Aufzeichnungsmaterial
US4609604A (en) * 1983-08-26 1986-09-02 Canon Kabushiki Kaisha Photoconductive member having a germanium silicon photoconductor
US4592983A (en) * 1983-09-08 1986-06-03 Canon Kabushiki Kaisha Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen
US4592979A (en) * 1983-09-09 1986-06-03 Canon Kabushiki Kaisha Photoconductive member of amorphous germanium and silicon with nitrogen
US4600671A (en) * 1983-09-12 1986-07-15 Canon Kabushiki Kaisha Photoconductive member having light receiving layer of A-(Si-Ge) and N
US4595644A (en) * 1983-09-12 1986-06-17 Canon Kabushiki Kaisha Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen
US4592981A (en) * 1983-09-13 1986-06-03 Canon Kabushiki Kaisha Photoconductive member of amorphous germanium and silicon with carbon
US4579797A (en) * 1983-10-25 1986-04-01 Canon Kabushiki Kaisha Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
US4592982A (en) * 1983-11-04 1986-06-03 Canon Kabushiki Kaisha Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)
US4601964A (en) * 1983-12-29 1986-07-22 Canon Kabushiki Kaisha Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O)
DE3447671A1 (de) * 1983-12-29 1985-07-11 Canon K.K., Tokio/Tokyo Fotoleitfaehiges aufzeichnungsmaterial
CA1254434A (en) * 1984-04-06 1989-05-23 Keishi Saitoh Light receiving member
JPS6126053A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
JPS6126054A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
JPS6126055A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
JPS6129847A (ja) * 1984-07-20 1986-02-10 Minolta Camera Co Ltd 電子写真感光体
US4703996A (en) * 1984-08-24 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated optical device having integral photodetector
JPS61110152A (ja) * 1984-11-05 1986-05-28 Minolta Camera Co Ltd 感光体
JPS61184584A (ja) * 1985-02-12 1986-08-18 Minolta Camera Co Ltd 複写方法
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US4749636A (en) * 1985-09-13 1988-06-07 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4698288A (en) * 1985-12-19 1987-10-06 Xerox Corporation Electrophotographic imaging members having a ground plane of hydrogenated amorphous silicon
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
JPH0670717B2 (ja) * 1986-04-18 1994-09-07 株式会社日立製作所 電子写真感光体
EP0261653A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0262570A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0261651A1 (en) * 1986-09-26 1988-03-30 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4711831A (en) * 1987-01-27 1987-12-08 Eastman Kodak Company Spectral sensitization of amorphous silicon photoconductive elements with phthalocyanine and arylamine layers
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US5264710A (en) * 1989-03-21 1993-11-23 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045204A2 (en) * 1980-07-28 1982-02-03 Hitachi, Ltd. Electrophotographic member and electrophotographic apparatus including the member

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647429A (en) * 1967-07-03 1972-03-07 Eastman Kodak Co Photoconductive compositions and electrophotographic elements containing group iva or group va organometallic photoconductors
JPS4843142B1 (enExample) * 1969-08-27 1973-12-17
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US4147667A (en) * 1978-01-13 1979-04-03 International Business Machines Corporation Photoconductor for GaAs laser addressed devices
JPS5562781A (en) * 1978-11-01 1980-05-12 Canon Inc Preparation of amorphous photoconductive portion material
JPS5611603A (en) * 1980-03-19 1981-02-05 Ogura Houseki Seiki Kogyo Kk Disc reproducing stylus
JPS56150753A (en) * 1980-04-23 1981-11-21 Canon Inc Image forming member for electrophotography
JPS58189643A (ja) * 1982-03-31 1983-11-05 Minolta Camera Co Ltd 感光体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045204A2 (en) * 1980-07-28 1982-02-03 Hitachi, Ltd. Electrophotographic member and electrophotographic apparatus including the member

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2551562A1 (enExample) * 1983-09-05 1985-03-08 Canon Kk
DE3439707A1 (de) * 1983-10-31 1985-05-15 Canon K.K., Tokio/Tokyo Fotoleitfaehiges aufzeichnungsmaterial
DE3536089A1 (de) * 1984-10-11 1986-04-17 Takao Sakai Osaka Kawamura Elektrophotographisch empfindliches element
DE3536089C3 (de) * 1984-10-11 1994-08-04 Kyocera Corp Elektrophotographisches Aufzeichnungsmaterial
DE3610401A1 (de) * 1985-03-28 1987-02-12 Sumitomo Electric Industries Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird
EP0227388A3 (en) * 1985-12-11 1988-11-30 Canon Kabushiki Kaisha Electrophotographic photosensitive member process and apparatus for the preparation thereof
EP0262807A1 (en) * 1986-09-03 1988-04-06 Hitachi, Ltd. Electrophotographic sensitized body

Also Published As

Publication number Publication date
US4491626A (en) 1985-01-01
DE3311463C2 (enExample) 1988-04-07

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MINOLTA CO., LTD., OSAKA, JP KAWAMURA, TAKAO, SAKA

8339 Ceased/non-payment of the annual fee