DE3306148A1 - Sperrschicht-fotoelement aus halbleitermaterial - Google Patents

Sperrschicht-fotoelement aus halbleitermaterial

Info

Publication number
DE3306148A1
DE3306148A1 DE19833306148 DE3306148A DE3306148A1 DE 3306148 A1 DE3306148 A1 DE 3306148A1 DE 19833306148 DE19833306148 DE 19833306148 DE 3306148 A DE3306148 A DE 3306148A DE 3306148 A1 DE3306148 A1 DE 3306148A1
Authority
DE
Germany
Prior art keywords
barrier layer
element according
photo element
layer photo
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19833306148
Other languages
German (de)
English (en)
Inventor
David D. Dr. 48084 Iroy Mich. Allred
Wolodymyr Dr. 48212 Hamtramck Mich. Czubatyj
Joachim Dr. 48085 Union Lake Mich. Doehler
Jaime M. Dr. 48008 Birmingham Mich. Reyes
Rajendra Dr. 73069 Norman Okla. Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of DE3306148A1 publication Critical patent/DE3306148A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
DE19833306148 1982-03-03 1983-02-22 Sperrschicht-fotoelement aus halbleitermaterial Withdrawn DE3306148A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/354,285 US4419533A (en) 1982-03-03 1982-03-03 Photovoltaic device having incident radiation directing means for total internal reflection

Publications (1)

Publication Number Publication Date
DE3306148A1 true DE3306148A1 (de) 1983-09-15

Family

ID=23392626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833306148 Withdrawn DE3306148A1 (de) 1982-03-03 1983-02-22 Sperrschicht-fotoelement aus halbleitermaterial

Country Status (20)

Country Link
US (1) US4419533A (enExample)
JP (1) JPS58159383A (enExample)
KR (1) KR840004309A (enExample)
AU (1) AU543213B2 (enExample)
BR (1) BR8300902A (enExample)
CA (1) CA1187970A (enExample)
DE (1) DE3306148A1 (enExample)
EG (1) EG15060A (enExample)
ES (1) ES8403667A1 (enExample)
FR (1) FR2522880A1 (enExample)
GB (1) GB2116364B (enExample)
GR (1) GR78799B (enExample)
IE (1) IE54408B1 (enExample)
IL (1) IL67794A (enExample)
IN (1) IN157618B (enExample)
IT (1) IT1167617B (enExample)
NL (1) NL8300603A (enExample)
PH (1) PH19299A (enExample)
SE (1) SE454225B (enExample)
ZA (1) ZA83748B (enExample)

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4497974A (en) * 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
JPS59127879A (ja) * 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd 光電変換装置およびその作製方法
GB2139421B (en) * 1983-03-07 1987-09-23 Semiconductor Energy Lab Semiconductor photoelectric conversion device and method of manufacture
US4536608A (en) * 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
DE3705173A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung
EP0263497B1 (en) * 1986-10-07 1994-05-18 Canon Kabushiki Kaisha Image reading device
FR2615327A1 (fr) * 1987-03-27 1988-11-18 Sanyo Electric Co Dispositif photovoltaique
JP2805353B2 (ja) * 1989-09-12 1998-09-30 キヤノン株式会社 太陽電池
US5138214A (en) * 1989-12-27 1992-08-11 Matsushita Electric Industrial Co., Ltd. Piezoelectric transducer and method of adjusting oscillation frequency thereof
DE4004398A1 (de) * 1990-02-13 1991-08-14 Siemens Ag Wellenlaengenselektiver photodetektor
JP2784841B2 (ja) * 1990-08-09 1998-08-06 キヤノン株式会社 太陽電池用基板
US5270858A (en) * 1990-10-11 1993-12-14 Viratec Thin Films Inc D.C. reactively sputtered antireflection coatings
WO1992007386A1 (en) * 1990-10-15 1992-04-30 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
US5284525A (en) * 1990-12-13 1994-02-08 Canon Kabushiki Kaisha Solar cell
JP2908067B2 (ja) * 1991-05-09 1999-06-21 キヤノン株式会社 太陽電池用基板および太陽電池
AU662360B2 (en) * 1991-10-22 1995-08-31 Canon Kabushiki Kaisha Photovoltaic device
US5221854A (en) * 1991-11-18 1993-06-22 United Solar Systems Corporation Protective layer for the back reflector of a photovoltaic device
US5291055A (en) * 1992-01-28 1994-03-01 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Resonant infrared detector with substantially unit quantum efficiency
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
US5230746A (en) * 1992-03-03 1993-07-27 Amoco Corporation Photovoltaic device having enhanced rear reflecting contact
US5261970A (en) * 1992-04-08 1993-11-16 Sverdrup Technology, Inc. Optoelectronic and photovoltaic devices with low-reflectance surfaces
US5296045A (en) * 1992-09-04 1994-03-22 United Solar Systems Corporation Composite back reflector for photovoltaic device
JP3006701B2 (ja) 1992-12-28 2000-02-07 キヤノン株式会社 薄膜半導体太陽電池
JP2771414B2 (ja) * 1992-12-28 1998-07-02 キヤノン株式会社 太陽電池の製造方法
US5593549A (en) * 1993-06-02 1997-01-14 Stirbl; Robert C. Method for changing solar energy distribution
US5650362A (en) * 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5668050A (en) * 1994-04-28 1997-09-16 Canon Kabushiki Kaisha Solar cell manufacturing method
JPH07326783A (ja) * 1994-05-30 1995-12-12 Canon Inc 光起電力素子の形成方法及びそれに用いる薄膜製造装置
JPH0864848A (ja) * 1994-08-23 1996-03-08 Canon Inc 光電気変換装置、反射防止膜及び電極基板
US6020553A (en) * 1994-10-09 2000-02-01 Yeda Research And Development Co., Ltd. Photovoltaic cell system and an optical structure therefor
JP3017422B2 (ja) * 1995-09-11 2000-03-06 キヤノン株式会社 光起電力素子アレー及びその製造方法
US5986204A (en) * 1996-03-21 1999-11-16 Canon Kabushiki Kaisha Photovoltaic cell
US6172296B1 (en) * 1996-05-17 2001-01-09 Canon Kabushiki Kaisha Photovoltaic cell
JPH10178193A (ja) * 1996-12-18 1998-06-30 Canon Inc 光起電力素子の製造方法
US5998730A (en) * 1997-05-13 1999-12-07 Canon Kabushiki Kaisha Production method for deposited film, production method for photoelectric conversion element, production apparatus for deposited film, production apparatus for photoelectric conversion element
JPH10335684A (ja) * 1997-05-30 1998-12-18 Canon Inc 光電気変換体の製造方法
US6222117B1 (en) 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
JPH11302843A (ja) * 1998-02-17 1999-11-02 Canon Inc 酸化亜鉛膜の堆積方法および堆積装置、光起電力素子
KR100414132B1 (ko) 1998-07-02 2004-01-07 아스트로파워 다결정성 실리콘 박막, 다결정성 실리콘 박막 전자 디바이스, 집적 태양 전지, 태양전지 모듈 및 그 제조방법
US6468828B1 (en) 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
JP2000294818A (ja) 1999-04-05 2000-10-20 Sony Corp 薄膜半導体素子およびその製造方法
TW437104B (en) * 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
JP2001345460A (ja) * 2000-03-29 2001-12-14 Sanyo Electric Co Ltd 太陽電池装置
US6858462B2 (en) * 2000-04-11 2005-02-22 Gratings, Inc. Enhanced light absorption of solar cells and photodetectors by diffraction
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
JP2003013218A (ja) * 2001-06-29 2003-01-15 Canon Inc 長時間スパッタリング方法
FR2832706B1 (fr) * 2001-11-28 2004-07-23 Saint Gobain Substrat transparent muni d'une electrode
US20050067667A1 (en) * 2003-09-26 2005-03-31 Goushcha Alexander O. Fast silicon photodiodes with high back surface reflectance in a wavelength range close to the bandgap
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
JP5367575B2 (ja) * 2006-09-28 2013-12-11 ビー−ポッズ・ホールディングス・プロプライエタリー・リミテッド 太陽エネルギー収集装置
US20080223438A1 (en) * 2006-10-19 2008-09-18 Intematix Corporation Systems and methods for improving luminescent concentrator performance
EP1993142A1 (de) * 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung
PT2031082E (pt) * 2007-08-31 2014-11-04 Ecole Polytech Substrato metálico texturizado cristalograficamente, dispositivvo texturizado cristalograficamente, célula e módulo fotovoltaico que compreendem um tal dispositivo e processo de deposição de camadas finas
KR101244027B1 (ko) * 2008-07-08 2013-03-14 시너스 테크놀리지, 인코포레이티드 플렉서블 태양전지 제조방법
TW201005963A (en) * 2008-07-17 2010-02-01 Big Sun Energy Technology Inc Solar cell with high photon utilization and method of manufacturing the same
WO2010028177A1 (en) * 2008-09-03 2010-03-11 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
KR100993513B1 (ko) * 2008-10-06 2010-11-10 엘지전자 주식회사 태양전지
KR20110086097A (ko) * 2008-10-23 2011-07-27 알타 디바이씨즈, 인크. 광전지 장치의 얇은 흡수 층
US20120104460A1 (en) 2010-11-03 2012-05-03 Alta Devices, Inc. Optoelectronic devices including heterojunction
US8686284B2 (en) * 2008-10-23 2014-04-01 Alta Devices, Inc. Photovoltaic device with increased light trapping
KR20110086098A (ko) * 2008-10-23 2011-07-27 알타 디바이씨즈, 인크. 광전지 장치
TW201021229A (en) * 2008-11-21 2010-06-01 Ind Tech Res Inst Solar cell having reflective structure
EP2190033A1 (de) 2008-11-24 2010-05-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Tandemsolarzelle aus kristallinem Silizium und kristallinem Siliziumcarbid sowie Verfahren zu dessen Herstellung
FR2939240B1 (fr) * 2008-12-03 2011-02-18 Saint Gobain Element en couches et dispositif photovoltaique comprenant un tel element
JP5470633B2 (ja) * 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池
US20100186816A1 (en) * 2009-01-23 2010-07-29 Samsung Electronics Co., Ltd. Solar cell
US20120037208A1 (en) * 2009-02-02 2012-02-16 Agency For Science, Technology And Research Thin film solar cell structure
US8207051B2 (en) 2009-04-28 2012-06-26 Sionyx, Inc. Semiconductor surface modification
FR2945159B1 (fr) * 2009-04-29 2016-04-01 Horiba Jobin Yvon Sas Reseau de diffraction metallique en reflexion a haute tenue au flux en regime femtoseconde, systeme comprenant un tel reseau et procede d'amelioration du seuil d'endommagement d'un reseau de diffraction metallique
WO2010127298A2 (en) * 2009-04-30 2010-11-04 Sionyx, Inc. Low oxygen content semiconductor material for surface enhanced photonic devices associated methods
US20100288352A1 (en) * 2009-05-12 2010-11-18 Lightwave Power, Inc. Integrated solar cell nanoarray layers and light concentrating device
TWI394285B (zh) * 2009-06-08 2013-04-21 Univ Tatung 光電轉換裝置及其製法
DE102009029944A1 (de) * 2009-06-19 2010-12-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zu deren Herstellung
US8062920B2 (en) * 2009-07-24 2011-11-22 Ovshinsky Innovation, Llc Method of manufacturing a photovoltaic device
US20110203648A1 (en) * 2009-08-20 2011-08-25 James Carey Laser processed heterojunction photovoltaic devices and associated methods
US8476598B1 (en) 2009-08-31 2013-07-02 Sionyx, Inc. Electromagnetic radiation imaging devices and associated methods
US8309389B1 (en) 2009-09-10 2012-11-13 Sionyx, Inc. Photovoltaic semiconductor devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
KR102095669B1 (ko) 2009-09-17 2020-04-01 사이오닉스, 엘엘씨 감광성 이미징 장치 및 이와 관련된 방법
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US20110095387A1 (en) * 2009-10-22 2011-04-28 James Carey Semiconductor devices having an enhanced absorption region and associated methods
US20150380576A1 (en) * 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US8212250B2 (en) 2009-12-10 2012-07-03 Leonard Forbes Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors
US8120027B2 (en) * 2009-12-10 2012-02-21 Leonard Forbes Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
FR2959872B1 (fr) * 2010-05-05 2013-03-15 Commissariat Energie Atomique Cellule photovoltaique a face arriere structuree et procede de fabrication associe.
EP2583312A2 (en) 2010-06-18 2013-04-24 Sionyx, Inc. High speed photosensitive devices and associated methods
TWI453932B (zh) * 2010-07-06 2014-09-21 Solarbase Group Inc 光伏模組和製造ㄧ具有電極擴散層之光伏模組的方法
US20120024365A1 (en) * 2010-07-27 2012-02-02 Alliance For Sustainable Energy, Llc Solar energy systems
US9893223B2 (en) 2010-11-16 2018-02-13 Suncore Photovoltaics, Inc. Solar electricity generation system
JP2014500633A (ja) 2010-12-21 2014-01-09 サイオニクス、インク． 基板損傷の少ない半導体素子および関連方法
US20120211065A1 (en) * 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
KR101833269B1 (ko) 2011-03-10 2018-02-28 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
US20130167903A1 (en) * 2011-11-14 2013-07-04 Prism Solar Technologies Incorporated Encapsulated solar energy concentrator
US20130167933A1 (en) * 2011-12-30 2013-07-04 Syracuse University Intrinsic oxide buffer layers for solar cells
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
CN103066134B (zh) * 2012-12-20 2016-02-10 河南大学 一种薄膜太阳能电池背反电极及其制备方法
US10514509B2 (en) * 2013-01-10 2019-12-24 The Regents Of The University Of Colorado, A Body Corporate Method and apparatus for optical waveguide-to-semiconductor coupling and optical vias for monolithically integrated electronic and photonic circuits
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
US9337229B2 (en) 2013-12-26 2016-05-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
JP2016178234A (ja) * 2015-03-20 2016-10-06 株式会社東芝 半導体受光デバイス
US10983275B2 (en) 2016-03-21 2021-04-20 The Regents Of The University Of Colorado, A Body Corporate Method and apparatus for optical waveguide-to-semiconductor coupling for integrated photonic circuits
EP4224537A1 (en) * 2022-02-02 2023-08-09 Airbus Defence and Space GmbH A dual junction solar cell with light management features for space use, a photovoltaic assembly for space use including a dual junction solar cell, a satellite including the photovoltaic assembly and a method for manufacturing a dual junction solar cell for space use

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2509533A1 (de) * 1974-03-11 1975-09-18 Rca Corp Sonnenzelle
US3971672A (en) * 1975-02-03 1976-07-27 D. H. Baldwin Company Light diffuser for photovoltaic cell
US4053327A (en) * 1975-09-24 1977-10-11 Communications Satellite Corporation Light concentrating solar cell cover
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
DE2828744A1 (de) * 1978-05-24 1979-12-06 Nat Patent Dev Corp Vorrichtung zum absorbieren von sonnenenergie und verfahren zur herstellung einer derartigen vorrichtung
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
US4246042A (en) * 1980-02-13 1981-01-20 Science Applications, Inc. Fixed solar energy concentrator
DE3023165A1 (de) * 1980-06-20 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium
DE3140974A1 (de) * 1981-10-15 1983-05-05 Viktor Voskanovič Afian Photoelektrische sonnenmodul

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
US3873829A (en) * 1970-05-29 1975-03-25 Philips Corp Photo cathode with means provided which produce a repeated total reflection of the incident light without interference phenomena
FR2226754B1 (enExample) * 1973-04-20 1975-08-22 Thomson Csf
US4153813A (en) * 1978-06-19 1979-05-08 Atlantic Richfield Company Luminescent solar collector
US4204881A (en) * 1978-10-02 1980-05-27 Mcgrew Stephen P Solar power system
JPS6041878B2 (ja) * 1979-02-14 1985-09-19 シャープ株式会社 薄膜太陽電池装置
US4328390A (en) * 1979-09-17 1982-05-04 The University Of Delaware Thin film photovoltaic cell
DK79780A (da) * 1980-02-25 1981-08-26 Elektronikcentralen Solcelle med et halvlederkrystal og med en belyst overflade batteri af solceller og fremgangsmaade til fremstilling af samme
DE3016498A1 (de) * 1980-04-29 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Lichtempfindliche halbleiterbauelemente
US4289920A (en) * 1980-06-23 1981-09-15 International Business Machines Corporation Multiple bandgap solar cell on transparent substrate

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2509533A1 (de) * 1974-03-11 1975-09-18 Rca Corp Sonnenzelle
US3971672A (en) * 1975-02-03 1976-07-27 D. H. Baldwin Company Light diffuser for photovoltaic cell
US4053327A (en) * 1975-09-24 1977-10-11 Communications Satellite Corporation Light concentrating solar cell cover
DE2828744A1 (de) * 1978-05-24 1979-12-06 Nat Patent Dev Corp Vorrichtung zum absorbieren von sonnenenergie und verfahren zur herstellung einer derartigen vorrichtung
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
US4246042A (en) * 1980-02-13 1981-01-20 Science Applications, Inc. Fixed solar energy concentrator
DE3023165A1 (de) * 1980-06-20 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium
DE3140974A1 (de) * 1981-10-15 1983-05-05 Viktor Voskanovič Afian Photoelektrische sonnenmodul

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PAJ & JP 55-125680 A *
US-Buch: Conf. Rec. 15th IEEE Photovoltaic Specialists Con. 1981, IEEE, New York 1981, S. 867-870 *
US-Z.: IEEE Transactions Electron Devices, Bd. ED-29, No. 2, 1982, S. 300-305 *

Also Published As

Publication number Publication date
GB2116364A (en) 1983-09-21
GB2116364B (en) 1985-10-23
KR840004309A (ko) 1984-10-10
FR2522880A1 (fr) 1983-09-09
GR78799B (enExample) 1984-10-02
EG15060A (en) 1985-12-31
NL8300603A (nl) 1983-10-03
IN157618B (enExample) 1986-05-03
BR8300902A (pt) 1983-11-16
ES520247A0 (es) 1984-03-16
IT8347739A0 (it) 1983-02-18
SE8301051D0 (sv) 1983-02-25
AU1149483A (en) 1983-09-08
SE454225B (sv) 1988-04-11
CA1187970A (en) 1985-05-28
IL67794A (en) 1986-01-31
PH19299A (en) 1986-03-05
IE830294L (en) 1983-09-03
SE8301051L (sv) 1983-09-04
ZA83748B (en) 1983-11-30
ES8403667A1 (es) 1984-03-16
IE54408B1 (en) 1989-09-27
IL67794A0 (en) 1983-05-15
IT8347739A1 (it) 1984-08-18
IT1167617B (it) 1987-05-13
GB8304033D0 (en) 1983-03-16
US4419533A (en) 1983-12-06
AU543213B2 (en) 1985-04-04
JPS58159383A (ja) 1983-09-21

Similar Documents

Publication Publication Date Title
DE3306148A1 (de) Sperrschicht-fotoelement aus halbleitermaterial
DE2940994C2 (enExample)
DE3244626C2 (enExample)
DE3314197A1 (de) P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
DE2632987C2 (de) Fotovoltaisches Halbleiterbauelement und Verfahren zu seiner Herstellung
DE69217287T2 (de) Photovoltische Vorrichtung mit mehreren Übergängen und Herstellungsverfahren
DE3650012T2 (de) Halbleitervorrichtung.
DE2943211C2 (de) Amorphe Halbleiter auf Silizium- und/oder Germaniumbasis, ihre Verwendung und ihre Herstellung durch Glimmentladung
DE3688987T2 (de) Modul von Dünnschichtsonnenzellen.
DE10101035B4 (de) Dünnschicht-Solarzelle, Solarzellenmodul und Verfahren zum Herstellen einer Dünnschicht-Solarzelle
DE69434949T2 (de) Verfahren und Vorrichtung zur Bildung eines abgeschiedenen Films
DE3854773T2 (de) Dünnschichtsolarzelle mit räumlich modulierter intrinsischer Schicht
DE2639841C3 (de) Solarzelle und Verfahren zu ihrer Herstellung
EP0025872B1 (de) Halbleiterbauelement für die Umsetzung solarer Strahlung in elektrische Energie
DE3135393C2 (de) Lichtempfindliche, amorphe Siliziumlegierung, ihre Verwendung sowie ein Verfahren zu ihrer Herstellung
DE69826161T2 (de) Photovoltaische Vorrichtung, photoelektrischer Wandler und Verfahren zu deren Herstellung
DE102011018268A1 (de) Single Junction CIGS/CIC Solar Module
DE112012003057T5 (de) Verfahren zum Stabilisieren von hydriertem, amorphem Silicium und amorphen, hydrierten Siliciumlegierungen
EP1421629A1 (de) Solarzelle sowie verfahren zur herstellung einer solchen
WO2011091967A2 (de) Photovoltaische mehrfach-dünnschichtsolarzelle
DE3308598A1 (de) Rueckreflektorsystem fuer sperrschicht-fotoelemente
DE3032158A1 (de) Solarzelle
DE2711365A1 (de) Halbleiteranordnung mit schottky- grenzschicht
DE3936666A1 (de) Geschichtete photovoltaische vorrichtung mit antireflexschicht
DE69211724T2 (de) Photovoltaische Vorrichtung mit einer Germanium enthaltenden Schichtzone

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee