DE3278895D1 - Processing method using a focused ion beam - Google Patents

Processing method using a focused ion beam

Info

Publication number
DE3278895D1
DE3278895D1 DE8282306567T DE3278895T DE3278895D1 DE 3278895 D1 DE3278895 D1 DE 3278895D1 DE 8282306567 T DE8282306567 T DE 8282306567T DE 3278895 T DE3278895 T DE 3278895T DE 3278895 D1 DE3278895 D1 DE 3278895D1
Authority
DE
Germany
Prior art keywords
processing method
ion beam
focused ion
focused
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282306567T
Other languages
German (de)
English (en)
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3278895D1 publication Critical patent/DE3278895D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
DE8282306567T 1981-12-18 1982-12-09 Processing method using a focused ion beam Expired DE3278895D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205016A JPS58106750A (ja) 1981-12-18 1981-12-18 フオ−カスイオンビ−ム加工方法

Publications (1)

Publication Number Publication Date
DE3278895D1 true DE3278895D1 (en) 1988-09-15

Family

ID=16500043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282306567T Expired DE3278895D1 (en) 1981-12-18 1982-12-09 Processing method using a focused ion beam

Country Status (4)

Country Link
US (1) US4457803A (https=)
EP (1) EP0082639B1 (https=)
JP (1) JPS58106750A (https=)
DE (1) DE3278895D1 (https=)

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WO2000065306A1 (fr) * 1999-04-21 2000-11-02 Seiko Instruments Inc. Technique de mesure de l'epaisseur d'un film
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JP2002141495A (ja) * 2000-11-02 2002-05-17 Takashi Katoda 集束イオンビームを用いて作製した極微細構造を有する電子デバイス及び光デバイス
DE50114591D1 (de) * 2001-05-22 2009-01-29 Infineon Technologies Ag Verfahren zur Herstellung einer Schicht mit einem vorgegebenen Schichtdickenprofil
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JP6162700B2 (ja) * 2011-08-22 2017-07-12 エクソジェネシス コーポレーション 表面分析向上のために加速中性ビームを使用する方法および装置
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Also Published As

Publication number Publication date
JPS58106750A (ja) 1983-06-25
EP0082639B1 (en) 1988-08-10
US4457803A (en) 1984-07-03
EP0082639A2 (en) 1983-06-29
JPH0328017B2 (https=) 1991-04-17
EP0082639A3 (en) 1984-05-16

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