DE3264724D1 - Method of connecting metal leads with electrodes of semiconductor device and metal lead - Google Patents

Method of connecting metal leads with electrodes of semiconductor device and metal lead

Info

Publication number
DE3264724D1
DE3264724D1 DE8282301340T DE3264724T DE3264724D1 DE 3264724 D1 DE3264724 D1 DE 3264724D1 DE 8282301340 T DE8282301340 T DE 8282301340T DE 3264724 T DE3264724 T DE 3264724T DE 3264724 D1 DE3264724 D1 DE 3264724D1
Authority
DE
Germany
Prior art keywords
electrodes
semiconductor device
metal
leads
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282301340T
Other languages
English (en)
Inventor
Kenzo Hatada
Isamu Kitahiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3264724D1 publication Critical patent/DE3264724D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
DE8282301340T 1981-03-16 1982-03-16 Method of connecting metal leads with electrodes of semiconductor device and metal lead Expired DE3264724D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56037499A JPS57152147A (en) 1981-03-16 1981-03-16 Formation of metal projection on metal lead

Publications (1)

Publication Number Publication Date
DE3264724D1 true DE3264724D1 (en) 1985-08-22

Family

ID=12499210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282301340T Expired DE3264724D1 (en) 1981-03-16 1982-03-16 Method of connecting metal leads with electrodes of semiconductor device and metal lead

Country Status (4)

Country Link
US (1) US4494688A (de)
EP (1) EP0061863B1 (de)
JP (1) JPS57152147A (de)
DE (1) DE3264724D1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223321A (en) * 1981-07-17 1993-06-29 British Telecommunications Plc Tape-automated bonding of integrated circuits
JPS59193039A (ja) * 1983-04-15 1984-11-01 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6034048A (ja) * 1983-08-04 1985-02-21 Matsushita Electric Ind Co Ltd キャリヤテ−プの製造方法
JPS6086840A (ja) * 1983-10-19 1985-05-16 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS60130147A (ja) * 1983-12-19 1985-07-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS60154536A (ja) * 1984-01-24 1985-08-14 Toshiba Corp 集積回路素子の配線方法
CA1226967A (en) * 1984-03-08 1987-09-15 Sheldon H. Butt Tape bonding material and structure for electronic circuit fabrication
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
JPS60206158A (ja) * 1984-03-30 1985-10-17 Matsushita Electric Ind Co Ltd 突起電極付フイルムキヤリア
JPS6149432A (ja) * 1984-08-18 1986-03-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS629642A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4701363A (en) * 1986-01-27 1987-10-20 Olin Corporation Process for manufacturing bumped tape for tape automated bonding and the product produced thereby
US4836435A (en) * 1986-05-12 1989-06-06 International Business Machines Corporation Component self alignment
JPS62283638A (ja) * 1986-06-02 1987-12-09 Shindo Denshi Kogyo Kk フイルムキヤリアの実装方法
JPS636850A (ja) * 1986-06-26 1988-01-12 Toshiba Corp 電子部品の製造方法
JPS6312141A (ja) * 1986-07-02 1988-01-19 Shindo Denshi Kogyo Kk フレキシブルテ−プへの半導体実装方法
EP0264648B1 (de) * 1986-09-25 1993-05-05 Kabushiki Kaisha Toshiba Verfahren zum Herstellen eines Filmträgers
US4959590A (en) * 1986-12-18 1990-09-25 Matsushita Electric Industrial Co., Ltd. Lead connection structure
US5089750A (en) * 1986-12-18 1992-02-18 Matsushita Electric Industrial Co., Ltd. Lead connection structure
US4739917A (en) * 1987-01-12 1988-04-26 Ford Motor Company Dual solder process for connecting electrically conducting terminals of electrical components to printed circuit conductors
EP0284820A3 (de) * 1987-03-04 1989-03-08 Canon Kabushiki Kaisha Elektrisches Verbindungsteil und elektrisches Schaltungsteil und elektrische Schaltungsanordnung mit dem Verbindungsteil
US4735678A (en) * 1987-04-13 1988-04-05 Olin Corporation Forming a circuit pattern in a metallic tape by electrical discharge machining
JPS6469022A (en) * 1987-09-10 1989-03-15 Rohm Co Ltd Wireless bonding structure of chip-shaped electronic part
US4876221A (en) * 1988-05-03 1989-10-24 Matsushita Electric Industrial Co., Ltd. Bonding method
US5161729A (en) * 1988-11-21 1992-11-10 Honeywell Inc. Package to semiconductor chip active interconnect site method
EP0370738A1 (de) * 1988-11-21 1990-05-30 Honeywell Inc. Leiterramen mit Lötpodesten
US5066614A (en) * 1988-11-21 1991-11-19 Honeywell Inc. Method of manufacturing a leadframe having conductive elements preformed with solder bumps
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
US5208186A (en) * 1989-02-09 1993-05-04 National Semiconductor Corporation Process for reflow bonding of bumps in IC devices
US5071787A (en) * 1989-03-14 1991-12-10 Kabushiki Kaisha Toshiba Semiconductor device utilizing a face-down bonding and a method for manufacturing the same
US5081520A (en) * 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern
US6471115B1 (en) * 1990-02-19 2002-10-29 Hitachi, Ltd. Process for manufacturing electronic circuit devices
DE69132891T2 (de) * 1990-03-14 2002-11-14 Nippon Steel Corp., Tokio/Tokyo Verfahren zum Verbinden von Höckern auf TAB-Trägerleitern und ein Apparat zum Anordnen von Höckern
DE4017863C1 (de) * 1990-06-02 1991-07-18 Du Pont De Nemours (Deutschland) Gmbh, 4000 Duesseldorf, De
TW223184B (de) * 1992-06-18 1994-05-01 Matsushita Electron Co Ltd
US5739053A (en) * 1992-10-27 1998-04-14 Matsushita Electric Industrial Co., Ltd. Process for bonding a semiconductor to a circuit substrate including a solder bump transferring step
KR960006970B1 (ko) * 1993-05-03 1996-05-25 삼성전자주식회사 필름 캐리어 및 그 제조방법
US5482200A (en) * 1994-02-22 1996-01-09 Delco Electronics Corporation Method for applying solder to a fine pitch flip chip pattern
US5567654A (en) * 1994-09-28 1996-10-22 International Business Machines Corporation Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
JP2625662B2 (ja) * 1996-02-13 1997-07-02 九州日立マクセル株式会社 電鋳金属体
JPH11145188A (ja) * 1997-11-10 1999-05-28 Sony Corp 半導体装置及びその製造方法
JP4329235B2 (ja) * 2000-06-27 2009-09-09 セイコーエプソン株式会社 半導体装置及びその製造方法
SG98047A1 (en) * 2001-12-14 2003-08-20 Micron Technology Inc Semiconductor package having substrate with multi-layer metal bumps
US7202556B2 (en) * 2001-12-20 2007-04-10 Micron Technology, Inc. Semiconductor package having substrate with multi-layer metal bumps
US7335536B2 (en) * 2005-09-01 2008-02-26 Texas Instruments Incorporated Method for fabricating low resistance, low inductance interconnections in high current semiconductor devices
DE102005051346B4 (de) * 2005-10-25 2011-02-10 Thallner, Erich, Dipl.-Ing. Träger für einen Wafer, Kombination aus einem Träger und einem Wafer sowie Verfahren zur Handhabung des Trägers
JP5147382B2 (ja) * 2007-12-20 2013-02-20 キヤノン株式会社 半導体素子基板及び該素子基板を用いたインクジェットヘッド、及びそれらに用いられる半導体素子基板の電気接続方法
JP4859996B1 (ja) * 2010-11-26 2012-01-25 田中貴金属工業株式会社 金属配線形成用の転写基板による金属配線の形成方法
JP5202714B1 (ja) * 2011-11-18 2013-06-05 田中貴金属工業株式会社 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374537A (en) * 1965-03-22 1968-03-26 Philco Ford Corp Method of connecting leads to a semiconductive device
GB1183335A (en) * 1966-04-19 1970-03-04 Burnley Engineering Products L Method for Manufacturing a Brazing Tape and to a Brazing Tape
US3646670A (en) * 1968-07-19 1972-03-07 Hitachi Chemical Co Ltd Method for connecting conductors
US3702580A (en) * 1969-11-28 1972-11-14 Polaroid Corp Reciprocating drawer type photographic apparatus and method
US3778530A (en) * 1971-04-01 1973-12-11 W Reimann Flatpack lead positioning device
US3713575A (en) * 1971-06-29 1973-01-30 Western Electric Co Bonding apparatus having means for continuous monitoring of the bond
US3766634A (en) * 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3781596A (en) * 1972-07-07 1973-12-25 R Galli Semiconductor chip carriers and strips thereof
US3838984A (en) * 1973-04-16 1974-10-01 Sperry Rand Corp Flexible carrier and interconnect for uncased ic chips
US4032058A (en) * 1973-06-29 1977-06-28 Ibm Corporation Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
JPS5124965A (ja) * 1974-08-26 1976-02-28 Furukawa Metals Co Netsukokankyodennetsukan
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
JPS5946101B2 (ja) * 1976-09-24 1984-11-10 富士通株式会社 半導体装置の実装方法
JPS5378953A (en) * 1976-12-23 1978-07-12 Tokyo Shibaura Electric Co Solder supplying method to integrated circuit board
JPS5394874A (en) * 1977-01-31 1978-08-19 Matsushita Electric Ind Co Ltd Connecting method for semiconductor device
US4176443A (en) * 1977-03-08 1979-12-04 Sgs-Ates Componenti Elettronici S.P.A. Method of connecting semiconductor structure to external circuits
JPS5469383A (en) * 1977-11-15 1979-06-04 Toshiba Corp Production of semiconductor device
EP0039160A3 (de) * 1980-04-29 1982-08-25 Minnesota Mining And Manufacturing Company Verfahren zum Verbinden elektrisch leitender Höcker an elektronische Schaltkreise
US4396140A (en) * 1981-01-27 1983-08-02 Bell Telephone Laboratories, Incorporated Method of bonding electronic components

Also Published As

Publication number Publication date
JPS6231819B2 (de) 1987-07-10
US4494688A (en) 1985-01-22
EP0061863A1 (de) 1982-10-06
EP0061863B1 (de) 1985-07-17
JPS57152147A (en) 1982-09-20

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