DE3239679A1 - Duennfilm-transistor - Google Patents
Duennfilm-transistorInfo
- Publication number
- DE3239679A1 DE3239679A1 DE19823239679 DE3239679A DE3239679A1 DE 3239679 A1 DE3239679 A1 DE 3239679A1 DE 19823239679 DE19823239679 DE 19823239679 DE 3239679 A DE3239679 A DE 3239679A DE 3239679 A1 DE3239679 A1 DE 3239679A1
- Authority
- DE
- Germany
- Prior art keywords
- film
- insulating film
- substrate
- transistor
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims description 104
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000007743 anodising Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56173308A JPS5874079A (ja) | 1981-10-28 | 1981-10-28 | 薄膜トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3239679A1 true DE3239679A1 (de) | 1983-05-11 |
| DE3239679C2 DE3239679C2 (enrdf_load_stackoverflow) | 1987-10-22 |
Family
ID=15958037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823239679 Granted DE3239679A1 (de) | 1981-10-28 | 1982-10-27 | Duennfilm-transistor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5874079A (enrdf_load_stackoverflow) |
| DE (1) | DE3239679A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2111302B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0513590A3 (en) * | 1991-05-08 | 1993-07-21 | Seiko Epson Corporation | Thin-film transistor and method for manufacturing it |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2594384B2 (ja) * | 1990-11-16 | 1997-03-26 | 松下電器産業株式会社 | 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置 |
| US7335552B2 (en) | 2002-05-15 | 2008-02-26 | Raytheon Company | Electrode for thin film capacitor devices |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
| DE2902303A1 (de) * | 1978-01-23 | 1979-07-26 | Sharp Kk | Duennfilmtransistor und verfahren zu seiner herstellung |
| DE3042021A1 (de) * | 1979-11-09 | 1981-05-27 | Japan Electronic Industry Development Association, Tokyo | Duennfilm-transistoren |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845028B2 (ja) * | 1978-03-27 | 1983-10-06 | シャープ株式会社 | マトリックス型液晶表示装置 |
-
1981
- 1981-10-28 JP JP56173308A patent/JPS5874079A/ja active Pending
-
1982
- 1982-10-25 GB GB08230385A patent/GB2111302B/en not_active Expired
- 1982-10-27 DE DE19823239679 patent/DE3239679A1/de active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
| DE2902303A1 (de) * | 1978-01-23 | 1979-07-26 | Sharp Kk | Duennfilmtransistor und verfahren zu seiner herstellung |
| DE3042021A1 (de) * | 1979-11-09 | 1981-05-27 | Japan Electronic Industry Development Association, Tokyo | Duennfilm-transistoren |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0513590A3 (en) * | 1991-05-08 | 1993-07-21 | Seiko Epson Corporation | Thin-film transistor and method for manufacturing it |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2111302A (en) | 1983-06-29 |
| DE3239679C2 (enrdf_load_stackoverflow) | 1987-10-22 |
| GB2111302B (en) | 1985-11-27 |
| JPS5874079A (ja) | 1983-05-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |