DE2329570C3 - - Google Patents
Info
- Publication number
- DE2329570C3 DE2329570C3 DE19732329570 DE2329570A DE2329570C3 DE 2329570 C3 DE2329570 C3 DE 2329570C3 DE 19732329570 DE19732329570 DE 19732329570 DE 2329570 A DE2329570 A DE 2329570A DE 2329570 C3 DE2329570 C3 DE 2329570C3
- Authority
- DE
- Germany
- Prior art keywords
- zones
- charge
- electrodes
- storage medium
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims description 33
- 239000002800 charge carrier Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 6
- 230000035515 penetration Effects 0.000 claims description 5
- 238000005381 potential energy Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000012546 transfer Methods 0.000 description 27
- 239000002019 doping agent Substances 0.000 description 20
- 230000004888 barrier function Effects 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US262787A US3906542A (en) | 1972-06-14 | 1972-06-14 | Conductively connected charge coupled devices |
| US26278772 | 1972-06-14 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2329570A1 DE2329570A1 (de) | 1974-01-03 |
| DE2329570B2 DE2329570B2 (de) | 1975-04-17 |
| DE2329570C3 true DE2329570C3 (enrdf_load_stackoverflow) | 1977-11-03 |
Family
ID=22999041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2329570A Granted DE2329570B2 (de) | 1972-06-14 | 1973-06-09 | Ladungsgekoppelte Vorrichtung und Verfahren zu deren Herstellung |
Country Status (12)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4124861A (en) * | 1975-10-01 | 1978-11-07 | General Electric Company | Charge transfer filter |
| DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
| US4041520A (en) * | 1976-08-06 | 1977-08-09 | Honeywell Information Systems Inc. | Uniphase charge transfer device |
| US4150304A (en) * | 1978-03-14 | 1979-04-17 | Hughes Aircraft Company | CCD Comparator |
| JPS57142855A (en) * | 1981-02-18 | 1982-09-03 | Toyota Motor Co Ltd | Method of clogging hole to which fluid pressure work |
| US4348690A (en) * | 1981-04-30 | 1982-09-07 | Rca Corporation | Semiconductor imagers |
| US4396438A (en) * | 1981-08-31 | 1983-08-02 | Rca Corporation | Method of making CCD imagers |
| JPH01152148U (enrdf_load_stackoverflow) * | 1988-04-12 | 1989-10-20 | ||
| EP0341453B1 (de) * | 1988-05-11 | 1993-08-25 | Siemens Aktiengesellschaft | MOS-Halbleiterbauelement für hohe Sperrspannung |
| US4910569A (en) * | 1988-08-29 | 1990-03-20 | Eastman Kodak Company | Charge-coupled device having improved transfer efficiency |
| KR940010932B1 (ko) * | 1991-12-23 | 1994-11-19 | 금성일렉트론주식회사 | Ccd영상소자 제조방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3643106A (en) * | 1970-09-14 | 1972-02-15 | Hughes Aircraft Co | Analog shift register |
| FR2123592A5 (enrdf_load_stackoverflow) * | 1971-01-14 | 1972-09-15 | Commissariat Energie Atomique | |
| US3735156A (en) * | 1971-06-28 | 1973-05-22 | Bell Telephone Labor Inc | Reversible two-phase charge coupled devices |
-
1972
- 1972-06-14 US US262787A patent/US3906542A/en not_active Expired - Lifetime
-
1973
- 1973-01-16 CA CA161,364A patent/CA977462A/en not_active Expired
- 1973-05-11 BE BE131035A patent/BE799437A/xx unknown
- 1973-06-08 ES ES416011A patent/ES416011A1/es not_active Expired
- 1973-06-08 NL NL7308043.A patent/NL164157C/xx not_active IP Right Cessation
- 1973-06-09 DE DE2329570A patent/DE2329570B2/de active Granted
- 1973-06-11 IL IL42476A patent/IL42476A0/xx unknown
- 1973-06-13 IT IT68739/73A patent/IT986455B/it active
- 1973-06-13 FR FR7321468A patent/FR2188240B1/fr not_active Expired
- 1973-06-13 CH CH852473A patent/CH552871A/xx not_active IP Right Cessation
- 1973-06-13 GB GB2805273A patent/GB1415436A/en not_active Expired
- 1973-06-14 JP JP48066448A patent/JPS5234348B2/ja not_active Expired
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