GB2111302B - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
GB2111302B
GB2111302B GB08230385A GB8230385A GB2111302B GB 2111302 B GB2111302 B GB 2111302B GB 08230385 A GB08230385 A GB 08230385A GB 8230385 A GB8230385 A GB 8230385A GB 2111302 B GB2111302 B GB 2111302B
Authority
GB
United Kingdom
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08230385A
Other languages
English (en)
Other versions
GB2111302A (en
Inventor
Yutaka Takafuji
Kohhei Kishi
Hiroaki Kato
Fumiaki Funada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Electronic Industry Development Association
Sharp Corp
Original Assignee
Japan Electronic Industry Development Association
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Electronic Industry Development Association, Sharp Corp filed Critical Japan Electronic Industry Development Association
Publication of GB2111302A publication Critical patent/GB2111302A/en
Application granted granted Critical
Publication of GB2111302B publication Critical patent/GB2111302B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739Conductor-insulator-semiconductor electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
GB08230385A 1981-10-28 1982-10-25 Thin film transistor Expired GB2111302B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56173308A JPS5874079A (ja) 1981-10-28 1981-10-28 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
GB2111302A GB2111302A (en) 1983-06-29
GB2111302B true GB2111302B (en) 1985-11-27

Family

ID=15958037

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08230385A Expired GB2111302B (en) 1981-10-28 1982-10-25 Thin film transistor

Country Status (3)

Country Link
JP (1) JPS5874079A (enrdf_load_stackoverflow)
DE (1) DE3239679A1 (enrdf_load_stackoverflow)
GB (1) GB2111302B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2594384B2 (ja) * 1990-11-16 1997-03-26 松下電器産業株式会社 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
US7335552B2 (en) 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
JPS5845028B2 (ja) * 1978-03-27 1983-10-06 シャープ株式会社 マトリックス型液晶表示装置
JPS5499576A (en) * 1978-01-23 1979-08-06 Sharp Corp Thin-film transistor and its manufacture
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor

Also Published As

Publication number Publication date
GB2111302A (en) 1983-06-29
DE3239679C2 (enrdf_load_stackoverflow) 1987-10-22
DE3239679A1 (de) 1983-05-11
JPS5874079A (ja) 1983-05-04

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20021024