DE3239204A1 - Feldeffekt-transistorstruktur - Google Patents

Feldeffekt-transistorstruktur

Info

Publication number
DE3239204A1
DE3239204A1 DE19823239204 DE3239204A DE3239204A1 DE 3239204 A1 DE3239204 A1 DE 3239204A1 DE 19823239204 DE19823239204 DE 19823239204 DE 3239204 A DE3239204 A DE 3239204A DE 3239204 A1 DE3239204 A1 DE 3239204A1
Authority
DE
Germany
Prior art keywords
source
gate
gate electrode
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823239204
Other languages
German (de)
English (en)
Other versions
DE3239204C2 (enrdf_load_stackoverflow
Inventor
Nathan Dr. 95129 San Jose Calif. Zommer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Publication of DE3239204A1 publication Critical patent/DE3239204A1/de
Application granted granted Critical
Publication of DE3239204C2 publication Critical patent/DE3239204C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19823239204 1981-10-26 1982-10-22 Feldeffekt-transistorstruktur Granted DE3239204A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31480081A 1981-10-26 1981-10-26

Publications (2)

Publication Number Publication Date
DE3239204A1 true DE3239204A1 (de) 1983-05-19
DE3239204C2 DE3239204C2 (enrdf_load_stackoverflow) 1987-07-23

Family

ID=23221492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823239204 Granted DE3239204A1 (de) 1981-10-26 1982-10-22 Feldeffekt-transistorstruktur

Country Status (4)

Country Link
JP (1) JPS5882574A (enrdf_load_stackoverflow)
DE (1) DE3239204A1 (enrdf_load_stackoverflow)
FR (1) FR2515429B1 (enrdf_load_stackoverflow)
GB (1) GB2108758B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833513A (en) * 1985-01-20 1989-05-23 Tdk Corporation MOS FET semiconductor device having a cell pattern arrangement for optimizing channel width
US5317184A (en) * 1992-11-09 1994-05-31 Harris Corporation Device and method for improving current carrying capability in a semiconductor device
EP0823735A1 (en) * 1996-08-05 1998-02-11 Sgs-Thomson Microelectronics S.A. MOS-technology power device
JP2006339516A (ja) 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法
CN110676317B (zh) * 2019-09-30 2022-10-11 福建省福联集成电路有限公司 一种晶体管管芯结构及制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022001A1 (fr) * 1979-06-29 1981-01-07 Thomson-Csf Transistor à effet de champ vertical de puissance pour hautes fréquences, et procédé de réalisation d'un tel transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022001A1 (fr) * 1979-06-29 1981-01-07 Thomson-Csf Transistor à effet de champ vertical de puissance pour hautes fréquences, et procédé de réalisation d'un tel transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GB-Z.: Electronic Engineering, März 1981, S. 86-88, 90, 93 *

Also Published As

Publication number Publication date
FR2515429B1 (fr) 1986-09-26
DE3239204C2 (enrdf_load_stackoverflow) 1987-07-23
GB2108758B (en) 1985-08-21
FR2515429A1 (fr) 1983-04-29
GB2108758A (en) 1983-05-18
JPS5882574A (ja) 1983-05-18

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8328 Change in the person/name/address of the agent

Free format text: SCHUELER, H., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6000 FRANKFURT

8339 Ceased/non-payment of the annual fee