JPS5882574A - 電力用電界効果トランジスタ構造物 - Google Patents

電力用電界効果トランジスタ構造物

Info

Publication number
JPS5882574A
JPS5882574A JP57187341A JP18734182A JPS5882574A JP S5882574 A JPS5882574 A JP S5882574A JP 57187341 A JP57187341 A JP 57187341A JP 18734182 A JP18734182 A JP 18734182A JP S5882574 A JPS5882574 A JP S5882574A
Authority
JP
Japan
Prior art keywords
electrode
layer
source
date
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57187341A
Other languages
English (en)
Japanese (ja)
Inventor
ナサン・ゾンマ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Corp
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Corp, Intersil Inc filed Critical Intersil Corp
Publication of JPS5882574A publication Critical patent/JPS5882574A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
JP57187341A 1981-10-26 1982-10-25 電力用電界効果トランジスタ構造物 Pending JPS5882574A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31480081A 1981-10-26 1981-10-26
US314800 1981-10-26

Publications (1)

Publication Number Publication Date
JPS5882574A true JPS5882574A (ja) 1983-05-18

Family

ID=23221492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57187341A Pending JPS5882574A (ja) 1981-10-26 1982-10-25 電力用電界効果トランジスタ構造物

Country Status (4)

Country Link
JP (1) JPS5882574A (enrdf_load_stackoverflow)
DE (1) DE3239204A1 (enrdf_load_stackoverflow)
FR (1) FR2515429B1 (enrdf_load_stackoverflow)
GB (1) GB2108758B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339516A (ja) * 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833513A (en) * 1985-01-20 1989-05-23 Tdk Corporation MOS FET semiconductor device having a cell pattern arrangement for optimizing channel width
US5317184A (en) * 1992-11-09 1994-05-31 Harris Corporation Device and method for improving current carrying capability in a semiconductor device
EP0823735A1 (en) * 1996-08-05 1998-02-11 Sgs-Thomson Microelectronics S.A. MOS-technology power device
CN110676317B (zh) * 2019-09-30 2022-10-11 福建省福联集成电路有限公司 一种晶体管管芯结构及制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
FR2460542A1 (fr) * 1979-06-29 1981-01-23 Thomson Csf Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN=1981US *
ELECTRONICS=1981US *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339516A (ja) * 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法
US9202891B2 (en) 2005-06-03 2015-12-01 Rohm Co., Ltd. Semiconductor device and method for manufacturing same
US9837525B2 (en) 2005-06-03 2017-12-05 Rohm Co., Ltd. Semiconductor device and method for manufacturing same

Also Published As

Publication number Publication date
FR2515429B1 (fr) 1986-09-26
DE3239204C2 (enrdf_load_stackoverflow) 1987-07-23
DE3239204A1 (de) 1983-05-19
GB2108758B (en) 1985-08-21
FR2515429A1 (fr) 1983-04-29
GB2108758A (en) 1983-05-18

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