DE3148323A1 - Halbleiterschaltung - Google Patents
HalbleiterschaltungInfo
- Publication number
- DE3148323A1 DE3148323A1 DE19813148323 DE3148323A DE3148323A1 DE 3148323 A1 DE3148323 A1 DE 3148323A1 DE 19813148323 DE19813148323 DE 19813148323 DE 3148323 A DE3148323 A DE 3148323A DE 3148323 A1 DE3148323 A1 DE 3148323A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- base
- transistor
- semiconductor
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 230000003071 parasitic effect Effects 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ion Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55174499A JPS5799771A (en) | 1980-12-12 | 1980-12-12 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3148323A1 true DE3148323A1 (de) | 1982-09-09 |
Family
ID=15979556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813148323 Withdrawn DE3148323A1 (de) | 1980-12-12 | 1981-12-07 | Halbleiterschaltung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4639757A (enrdf_load_stackoverflow) |
| JP (1) | JPS5799771A (enrdf_load_stackoverflow) |
| DE (1) | DE3148323A1 (enrdf_load_stackoverflow) |
| GB (2) | GB2089564B (enrdf_load_stackoverflow) |
| HK (2) | HK70187A (enrdf_load_stackoverflow) |
| IT (1) | IT1140324B (enrdf_load_stackoverflow) |
| MY (1) | MY8700615A (enrdf_load_stackoverflow) |
| SG (1) | SG36387G (enrdf_load_stackoverflow) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
| FR2615326B1 (fr) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | Dispositif a semi-conducteurs du type multi-emetteur |
| US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
| JPH0262048A (ja) * | 1988-08-27 | 1990-03-01 | Fuji Electric Co Ltd | トランジスタ |
| JPH07109831B2 (ja) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | 半導体装置 |
| US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
| EP0592157B1 (en) * | 1992-10-08 | 1998-11-25 | STMicroelectronics, Inc. | Integrated thin film approach to achieve high ballast levels for overlay structures |
| US6064109A (en) * | 1992-10-08 | 2000-05-16 | Sgs-Thomson Microelectronics, Inc. | Ballast resistance for producing varied emitter current flow along the emitter's injecting edge |
| US5374844A (en) * | 1993-03-25 | 1994-12-20 | Micrel, Inc. | Bipolar transistor structure using ballast resistor |
| RU2216070C1 (ru) * | 2002-11-10 | 2003-11-10 | Воронежский государственный университет | Мощная свч-транзисторная структура |
| RU2216069C1 (ru) * | 2002-11-10 | 2003-11-10 | Воронежский государственный университет | Мощная свч-транзисторная структура |
| RU2216073C1 (ru) * | 2002-11-10 | 2003-11-10 | Воронежский государственный университет | Мощный свч-транзистор |
| RU2216072C1 (ru) * | 2002-11-10 | 2003-11-10 | Воронежский государственный университет | Мощный свч-транзистор |
| RU2216071C1 (ru) * | 2002-11-10 | 2003-11-10 | Воронежский государственный университет | Мощная свч-транзисторная структура |
| US6946720B2 (en) * | 2003-02-13 | 2005-09-20 | Intersil Americas Inc. | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors |
| JP2006332117A (ja) * | 2005-05-23 | 2006-12-07 | Sharp Corp | トランジスタ構造および電子機器 |
| USD848384S1 (en) * | 2017-08-17 | 2019-05-14 | Epistar Corporation | Transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3619741A (en) * | 1969-11-24 | 1971-11-09 | Texas Instruments Inc | Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices |
| DE1291418B (enrdf_load_stackoverflow) * | 1963-05-22 | 1974-06-27 | ||
| GB2018511A (en) * | 1978-04-07 | 1979-10-17 | Philips Nv | Semiconductor device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3609460A (en) * | 1968-06-28 | 1971-09-28 | Rca Corp | Power transistor having ballasted emitter fingers interdigitated with base fingers |
| GB1324507A (en) * | 1969-12-18 | 1973-07-25 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3884732A (en) * | 1971-07-29 | 1975-05-20 | Ibm | Monolithic storage array and method of making |
| DE2137976C3 (de) * | 1971-07-29 | 1978-08-31 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithischer Speicher und Verfahren zur Herstellung |
| JPS5223715B2 (enrdf_load_stackoverflow) * | 1972-03-27 | 1977-06-25 | ||
| GB1556169A (en) * | 1975-12-23 | 1979-11-21 | Ferranti Ltd | Transistor logic circuits |
| US4149177A (en) * | 1976-09-03 | 1979-04-10 | Fairchild Camera And Instrument Corporation | Method of fabricating conductive buried regions in integrated circuits and the resulting structures |
| FR2374742A1 (fr) * | 1976-12-20 | 1978-07-13 | Radiotechnique Compelec | Transistor multicouche pour tensions elevees et son procede de fabrication |
| US4151540A (en) * | 1977-12-08 | 1979-04-24 | Fairchild Camera And Instrument Corporation | High beta, high frequency transistor structure |
| JPS55138273A (en) * | 1979-04-11 | 1980-10-28 | Fujitsu Ltd | Transistor |
| JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-12-12 JP JP55174499A patent/JPS5799771A/ja active Granted
-
1981
- 1981-11-19 GB GB8134947A patent/GB2089564B/en not_active Expired
- 1981-12-07 DE DE19813148323 patent/DE3148323A1/de not_active Withdrawn
- 1981-12-10 IT IT25510/81A patent/IT1140324B/it active
- 1981-12-11 US US06/329,948 patent/US4639757A/en not_active Expired - Fee Related
-
1984
- 1984-11-15 GB GB08428941A patent/GB2149575B/en not_active Expired
-
1987
- 1987-04-23 SG SG363/87A patent/SG36387G/en unknown
- 1987-10-01 HK HK701/87A patent/HK70187A/xx unknown
- 1987-10-01 HK HK715/87A patent/HK71587A/xx unknown
- 1987-12-30 MY MY615/87A patent/MY8700615A/xx unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1291418B (enrdf_load_stackoverflow) * | 1963-05-22 | 1974-06-27 | ||
| US3619741A (en) * | 1969-11-24 | 1971-11-09 | Texas Instruments Inc | Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices |
| GB2018511A (en) * | 1978-04-07 | 1979-10-17 | Philips Nv | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1140324B (it) | 1986-09-24 |
| SG36387G (en) | 1987-07-24 |
| MY8700615A (en) | 1987-12-31 |
| GB8428941D0 (en) | 1984-12-27 |
| JPS5799771A (en) | 1982-06-21 |
| US4639757A (en) | 1987-01-27 |
| GB2149575B (en) | 1985-12-04 |
| GB2089564A (en) | 1982-06-23 |
| GB2149575A (en) | 1985-06-12 |
| HK70187A (en) | 1987-10-09 |
| GB2089564B (en) | 1985-11-20 |
| IT8125510A0 (it) | 1981-12-10 |
| HK71587A (en) | 1987-10-09 |
| JPH0133954B2 (enrdf_load_stackoverflow) | 1989-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8128 | New person/name/address of the agent |
Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE |
|
| 8139 | Disposal/non-payment of the annual fee |