IT8125510A0 - Dispositivo a semiconduttore, in particolare transistor di potenza. - Google Patents

Dispositivo a semiconduttore, in particolare transistor di potenza.

Info

Publication number
IT8125510A0
IT8125510A0 IT8125510A IT2551081A IT8125510A0 IT 8125510 A0 IT8125510 A0 IT 8125510A0 IT 8125510 A IT8125510 A IT 8125510A IT 2551081 A IT2551081 A IT 2551081A IT 8125510 A0 IT8125510 A0 IT 8125510A0
Authority
IT
Italy
Prior art keywords
semiconductor device
power transistor
especially power
transistor
semiconductor
Prior art date
Application number
IT8125510A
Other languages
English (en)
Other versions
IT1140324B (it
Inventor
Isao Shimizu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8125510A0 publication Critical patent/IT8125510A0/it
Application granted granted Critical
Publication of IT1140324B publication Critical patent/IT1140324B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
IT25510/81A 1980-12-12 1981-12-10 Dispositivo a semiconduttore,in particolare transistor di potenza IT1140324B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55174499A JPS5799771A (en) 1980-12-12 1980-12-12 Semiconductor device

Publications (2)

Publication Number Publication Date
IT8125510A0 true IT8125510A0 (it) 1981-12-10
IT1140324B IT1140324B (it) 1986-09-24

Family

ID=15979556

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25510/81A IT1140324B (it) 1980-12-12 1981-12-10 Dispositivo a semiconduttore,in particolare transistor di potenza

Country Status (8)

Country Link
US (1) US4639757A (it)
JP (1) JPS5799771A (it)
DE (1) DE3148323A1 (it)
GB (2) GB2089564B (it)
HK (2) HK71587A (it)
IT (1) IT1140324B (it)
MY (1) MY8700615A (it)
SG (1) SG36387G (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
JPH0262048A (ja) * 1988-08-27 1990-03-01 Fuji Electric Co Ltd トランジスタ
JPH07109831B2 (ja) * 1990-01-25 1995-11-22 株式会社東芝 半導体装置
US5387813A (en) * 1992-09-25 1995-02-07 National Semiconductor Corporation Transistors with emitters having at least three sides
DE69322226T2 (de) * 1992-10-08 1999-05-20 St Microelectronics Inc Integriertes Dünnschichtverfahren zur Erlangung von hohen Ballastwerten für Überlagerungsstrukturen
US6064109A (en) * 1992-10-08 2000-05-16 Sgs-Thomson Microelectronics, Inc. Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
US5374844A (en) * 1993-03-25 1994-12-20 Micrel, Inc. Bipolar transistor structure using ballast resistor
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
JP2006332117A (ja) * 2005-05-23 2006-12-07 Sharp Corp トランジスタ構造および電子機器
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
US3619741A (en) * 1969-11-24 1971-11-09 Texas Instruments Inc Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices
GB1324507A (en) * 1969-12-18 1973-07-25 Mullard Ltd Methods of manufacturing a semiconductor device
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
DE2137976C3 (de) * 1971-07-29 1978-08-31 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithischer Speicher und Verfahren zur Herstellung
JPS5223715B2 (it) * 1972-03-27 1977-06-25
GB1556169A (en) * 1975-12-23 1979-11-21 Ferranti Ltd Transistor logic circuits
US4149177A (en) * 1976-09-03 1979-04-10 Fairchild Camera And Instrument Corporation Method of fabricating conductive buried regions in integrated circuits and the resulting structures
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
US4151540A (en) * 1977-12-08 1979-04-24 Fairchild Camera And Instrument Corporation High beta, high frequency transistor structure
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
SG36387G (en) 1987-07-24
HK70187A (en) 1987-10-09
US4639757A (en) 1987-01-27
JPH0133954B2 (it) 1989-07-17
IT1140324B (it) 1986-09-24
DE3148323A1 (de) 1982-09-09
HK71587A (en) 1987-10-09
GB2149575B (en) 1985-12-04
GB2089564A (en) 1982-06-23
GB2149575A (en) 1985-06-12
GB2089564B (en) 1985-11-20
JPS5799771A (en) 1982-06-21
MY8700615A (en) 1987-12-31
GB8428941D0 (en) 1984-12-27

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19941222