IT1140324B - Dispositivo a semiconduttore,in particolare transistor di potenza - Google Patents
Dispositivo a semiconduttore,in particolare transistor di potenzaInfo
- Publication number
- IT1140324B IT1140324B IT25510/81A IT2551081A IT1140324B IT 1140324 B IT1140324 B IT 1140324B IT 25510/81 A IT25510/81 A IT 25510/81A IT 2551081 A IT2551081 A IT 2551081A IT 1140324 B IT1140324 B IT 1140324B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- power transistor
- particular power
- transistor
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55174499A JPS5799771A (en) | 1980-12-12 | 1980-12-12 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8125510A0 IT8125510A0 (it) | 1981-12-10 |
| IT1140324B true IT1140324B (it) | 1986-09-24 |
Family
ID=15979556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT25510/81A IT1140324B (it) | 1980-12-12 | 1981-12-10 | Dispositivo a semiconduttore,in particolare transistor di potenza |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4639757A (it) |
| JP (1) | JPS5799771A (it) |
| DE (1) | DE3148323A1 (it) |
| GB (2) | GB2089564B (it) |
| HK (2) | HK70187A (it) |
| IT (1) | IT1140324B (it) |
| MY (1) | MY8700615A (it) |
| SG (1) | SG36387G (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
| US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
| FR2615326B1 (fr) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | Dispositif a semi-conducteurs du type multi-emetteur |
| JPH0262048A (ja) * | 1988-08-27 | 1990-03-01 | Fuji Electric Co Ltd | トランジスタ |
| JPH07109831B2 (ja) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | 半導体装置 |
| US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
| EP0592157B1 (en) * | 1992-10-08 | 1998-11-25 | STMicroelectronics, Inc. | Integrated thin film approach to achieve high ballast levels for overlay structures |
| US6064109A (en) * | 1992-10-08 | 2000-05-16 | Sgs-Thomson Microelectronics, Inc. | Ballast resistance for producing varied emitter current flow along the emitter's injecting edge |
| US5374844A (en) * | 1993-03-25 | 1994-12-20 | Micrel, Inc. | Bipolar transistor structure using ballast resistor |
| US6946720B2 (en) * | 2003-02-13 | 2005-09-20 | Intersil Americas Inc. | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors |
| JP2006332117A (ja) * | 2005-05-23 | 2006-12-07 | Sharp Corp | トランジスタ構造および電子機器 |
| USD848384S1 (en) * | 2017-08-17 | 2019-05-14 | Epistar Corporation | Transistor |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
| US3609460A (en) * | 1968-06-28 | 1971-09-28 | Rca Corp | Power transistor having ballasted emitter fingers interdigitated with base fingers |
| US3619741A (en) * | 1969-11-24 | 1971-11-09 | Texas Instruments Inc | Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices |
| GB1324507A (en) * | 1969-12-18 | 1973-07-25 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| DE2137976C3 (de) * | 1971-07-29 | 1978-08-31 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithischer Speicher und Verfahren zur Herstellung |
| US3884732A (en) * | 1971-07-29 | 1975-05-20 | Ibm | Monolithic storage array and method of making |
| JPS5223715B2 (it) * | 1972-03-27 | 1977-06-25 | ||
| GB1556169A (en) * | 1975-12-23 | 1979-11-21 | Ferranti Ltd | Transistor logic circuits |
| US4149177A (en) * | 1976-09-03 | 1979-04-10 | Fairchild Camera And Instrument Corporation | Method of fabricating conductive buried regions in integrated circuits and the resulting structures |
| FR2374742A1 (fr) * | 1976-12-20 | 1978-07-13 | Radiotechnique Compelec | Transistor multicouche pour tensions elevees et son procede de fabrication |
| US4151540A (en) * | 1977-12-08 | 1979-04-24 | Fairchild Camera And Instrument Corporation | High beta, high frequency transistor structure |
| NL184185C (nl) * | 1978-04-07 | 1989-05-01 | Philips Nv | Darlingtonschakeling met een geintegreerde halfgeleiderdiode. |
| JPS55138273A (en) * | 1979-04-11 | 1980-10-28 | Fujitsu Ltd | Transistor |
| JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-12-12 JP JP55174499A patent/JPS5799771A/ja active Granted
-
1981
- 1981-11-19 GB GB8134947A patent/GB2089564B/en not_active Expired
- 1981-12-07 DE DE19813148323 patent/DE3148323A1/de not_active Withdrawn
- 1981-12-10 IT IT25510/81A patent/IT1140324B/it active
- 1981-12-11 US US06/329,948 patent/US4639757A/en not_active Expired - Fee Related
-
1984
- 1984-11-15 GB GB08428941A patent/GB2149575B/en not_active Expired
-
1987
- 1987-04-23 SG SG363/87A patent/SG36387G/en unknown
- 1987-10-01 HK HK701/87A patent/HK70187A/xx unknown
- 1987-10-01 HK HK715/87A patent/HK71587A/xx unknown
- 1987-12-30 MY MY615/87A patent/MY8700615A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2149575B (en) | 1985-12-04 |
| GB2089564A (en) | 1982-06-23 |
| GB2149575A (en) | 1985-06-12 |
| GB8428941D0 (en) | 1984-12-27 |
| SG36387G (en) | 1987-07-24 |
| GB2089564B (en) | 1985-11-20 |
| US4639757A (en) | 1987-01-27 |
| MY8700615A (en) | 1987-12-31 |
| IT8125510A0 (it) | 1981-12-10 |
| JPH0133954B2 (it) | 1989-07-17 |
| JPS5799771A (en) | 1982-06-21 |
| HK71587A (en) | 1987-10-09 |
| HK70187A (en) | 1987-10-09 |
| DE3148323A1 (de) | 1982-09-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19941222 |