DE3139846C2 - - Google Patents
Info
- Publication number
- DE3139846C2 DE3139846C2 DE3139846A DE3139846A DE3139846C2 DE 3139846 C2 DE3139846 C2 DE 3139846C2 DE 3139846 A DE3139846 A DE 3139846A DE 3139846 A DE3139846 A DE 3139846A DE 3139846 C2 DE3139846 C2 DE 3139846C2
- Authority
- DE
- Germany
- Prior art keywords
- gate electrode
- floating gate
- layer
- substrate
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007667 floating Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 31
- 230000015654 memory Effects 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 44
- 238000005530 etching Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/196,838 US4412310A (en) | 1980-10-14 | 1980-10-14 | EPROM Cell with reduced programming voltage and method of fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3139846A1 DE3139846A1 (de) | 1982-06-16 |
| DE3139846C2 true DE3139846C2 (en, 2012) | 1990-04-26 |
Family
ID=22726978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813139846 Granted DE3139846A1 (de) | 1980-10-14 | 1981-10-07 | Mos-eprom-zelle und verfahren zu deren herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4412310A (en, 2012) |
| JP (1) | JPS5793578A (en, 2012) |
| DE (1) | DE3139846A1 (en, 2012) |
| GB (1) | GB2085226B (en, 2012) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157573A (en) * | 1981-03-25 | 1982-09-29 | Fujitsu Ltd | Semiconductor non-volatile memory cell |
| DE3316096A1 (de) * | 1983-05-03 | 1984-11-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von speicherzellen mit einem ein schwebendes gate aufweisenden mos-feldeffekttransistor |
| US4494301A (en) * | 1983-09-01 | 1985-01-22 | Rca Corporation | Method of making semiconductor device with multi-levels of polycrystalline silicon conductors |
| EP0160965B1 (en) * | 1984-05-07 | 1990-01-31 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device with a stacked-gate-electrode structure |
| JPS60234372A (ja) * | 1984-05-07 | 1985-11-21 | Toshiba Corp | 半導体装置の製造方法 |
| FR2600810A1 (fr) * | 1986-06-27 | 1987-12-31 | Eurotechnique Sa | Procede de programmation de donnees dans une memoire morte programmable electriquement |
| KR920013709A (ko) * | 1990-12-21 | 1992-07-29 | 김광호 | 불휘발성 반도체 메모리장치 및 그 제조방법 |
| US5247477A (en) * | 1991-05-31 | 1993-09-21 | Altera Corporation | Method of programming floating gate memory devices aided by potential applied to read channel |
| US5198381A (en) * | 1991-09-12 | 1993-03-30 | Vlsi Technology, Inc. | Method of making an E2 PROM cell with improved tunneling properties having two implant stages |
| US5627091A (en) * | 1994-06-01 | 1997-05-06 | United Microelectronics Corporation | Mask ROM process for making a ROM with a trench shaped channel |
| US5541876A (en) * | 1994-06-01 | 1996-07-30 | United Microelectronics Corporation | Memory cell fabricated by floating gate structure |
| JP2929944B2 (ja) * | 1994-09-09 | 1999-08-03 | 株式会社デンソー | 半導体装置の製造方法 |
| US5706227A (en) * | 1995-12-07 | 1998-01-06 | Programmable Microelectronics Corporation | Double poly split gate PMOS flash memory cell |
| KR100252253B1 (ko) * | 1997-01-04 | 2000-05-01 | 윤종용 | 전기 소거식 프로그램어블 롬 |
| US7030038B1 (en) * | 1997-07-31 | 2006-04-18 | Texas Instruments Incorporated | Low temperature method for forming a thin, uniform oxide |
| KR100846392B1 (ko) * | 2006-08-31 | 2008-07-15 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
| US4016588A (en) * | 1974-12-27 | 1977-04-05 | Nippon Electric Company, Ltd. | Non-volatile semiconductor memory device |
| US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
| US4180826A (en) * | 1978-05-19 | 1979-12-25 | Intel Corporation | MOS double polysilicon read-only memory and cell |
| JPS55113359A (en) * | 1979-02-22 | 1980-09-01 | Fujitsu Ltd | Semiconductor integrated circuit device |
-
1980
- 1980-10-14 US US06/196,838 patent/US4412310A/en not_active Expired - Lifetime
-
1981
- 1981-09-07 GB GB8126961A patent/GB2085226B/en not_active Expired
- 1981-10-07 DE DE19813139846 patent/DE3139846A1/de active Granted
- 1981-10-14 JP JP56162889A patent/JPS5793578A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5793578A (en) | 1982-06-10 |
| DE3139846A1 (de) | 1982-06-16 |
| GB2085226A (en) | 1982-04-21 |
| GB2085226B (en) | 1985-08-21 |
| US4412310A (en) | 1983-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |