DE3134343C2 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE3134343C2
DE3134343C2 DE3134343A DE3134343A DE3134343C2 DE 3134343 C2 DE3134343 C2 DE 3134343C2 DE 3134343 A DE3134343 A DE 3134343A DE 3134343 A DE3134343 A DE 3134343A DE 3134343 C2 DE3134343 C2 DE 3134343C2
Authority
DE
Germany
Prior art keywords
film
protective ring
chip
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3134343A
Other languages
German (de)
English (en)
Other versions
DE3134343A1 (de
Inventor
Yuji Hara
Satoru Ito
Tatsuro Toja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Publication of DE3134343A1 publication Critical patent/DE3134343A1/de
Application granted granted Critical
Publication of DE3134343C2 publication Critical patent/DE3134343C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W42/00—
    • H10W74/137—
    • H10W74/43—
    • H10W72/59—
    • H10W72/932—
    • H10W72/983—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
DE3134343A 1980-09-01 1981-08-31 Halbleiteranordnung Expired - Lifetime DE3134343C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119817A JPS5745259A (en) 1980-09-01 1980-09-01 Resin sealing type semiconductor device

Publications (2)

Publication Number Publication Date
DE3134343A1 DE3134343A1 (de) 1982-06-03
DE3134343C2 true DE3134343C2 (de) 1996-08-22

Family

ID=14770970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3134343A Expired - Lifetime DE3134343C2 (de) 1980-09-01 1981-08-31 Halbleiteranordnung

Country Status (7)

Country Link
US (2) US4625227A (enExample)
JP (1) JPS5745259A (enExample)
DE (1) DE3134343C2 (enExample)
GB (1) GB2083283B (enExample)
HK (1) HK54286A (enExample)
IT (1) IT1138522B (enExample)
MY (1) MY8600546A (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same
GB2209433B (en) * 1987-09-04 1990-06-13 Plessey Co Plc Semi-conductor devices
US4928162A (en) * 1988-02-22 1990-05-22 Motorola, Inc. Die corner design having topological configurations
JPH01135739U (enExample) * 1988-03-09 1989-09-18
EP0342681B1 (en) * 1988-05-19 1995-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electrical device
US5223735A (en) * 1988-09-30 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
US5164816A (en) * 1988-12-29 1992-11-17 Hitachi Chemical Co., Ltd. Integrated circuit device produced with a resin layer produced from a heat-resistant resin paste
US5187558A (en) * 1989-05-08 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Stress reduction structure for a resin sealed semiconductor device
JPH0322535A (ja) * 1989-06-20 1991-01-30 Oki Electric Ind Co Ltd 樹脂封止型半導体装置
JPH07111971B2 (ja) * 1989-10-11 1995-11-29 三菱電機株式会社 集積回路装置の製造方法
JP2936542B2 (ja) * 1990-01-30 1999-08-23 株式会社日立製作所 電源幹線のレイアウト方法
US5179435A (en) * 1990-03-05 1993-01-12 Nec Corporation Resin sealed semiconductor integrated circuit device
KR950012657B1 (en) * 1991-01-22 1995-10-19 Nec Co Ltd Resin sealed semiconductor integrated circuit
JPH04256371A (ja) * 1991-02-08 1992-09-11 Toyota Autom Loom Works Ltd 半導体装置及びその製造方法
JP3004083B2 (ja) * 1991-06-21 2000-01-31 沖電気工業株式会社 半導体装置及びその製造装置
JPH05175191A (ja) * 1991-10-22 1993-07-13 Mitsubishi Electric Corp 積層導電配線
JP2559977B2 (ja) * 1992-07-29 1996-12-04 インターナショナル・ビジネス・マシーンズ・コーポレイション バイアに係るクラックを除去する方法及び構造、並びに、半導体セラミックパッケージ基板。
US5464794A (en) * 1994-05-11 1995-11-07 United Microelectronics Corporation Method of forming contact openings having concavo-concave shape
US5686356A (en) 1994-09-30 1997-11-11 Texas Instruments Incorporated Conductor reticulation for improved device planarity
US5572067A (en) * 1994-10-06 1996-11-05 Altera Corporation Sacrificial corner structures
US5543657A (en) * 1994-10-07 1996-08-06 International Business Machines Corporation Single layer leadframe design with groundplane capability
JP3384901B2 (ja) * 1995-02-02 2003-03-10 三菱電機株式会社 リードフレーム
KR0170316B1 (ko) * 1995-07-13 1999-02-01 김광호 반도체 장치의 패드 설계 방법
DE19630910A1 (de) * 1995-08-02 1997-02-06 Nat Semiconductor Corp Verfahren zum Herstellen eines Halbleiterbausteins
US5650666A (en) * 1995-11-22 1997-07-22 Cypress Semiconductor Corp. Method and apparatus for preventing cracks in semiconductor die
US5773895A (en) * 1996-04-03 1998-06-30 Intel Corporation Anchor provisions to prevent mold delamination in an overmolded plastic array package
KR100190927B1 (ko) * 1996-07-18 1999-06-01 윤종용 슬릿이 형성된 금속막을 구비한 반도체 칩 장치
US5750419A (en) * 1997-02-24 1998-05-12 Motorola, Inc. Process for forming a semiconductor device having a ferroelectric capacitor
US5977639A (en) * 1997-09-30 1999-11-02 Intel Corporation Metal staples to prevent interlayer delamination
US6246124B1 (en) 1998-09-16 2001-06-12 International Business Machines Corporation Encapsulated chip module and method of making same
KR100670693B1 (ko) * 2000-08-31 2007-01-17 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US6709977B2 (en) * 2002-02-12 2004-03-23 Broadcom Corporation Integrated circuit having oversized components and method of manafacture thereof
KR100653715B1 (ko) * 2005-06-17 2006-12-05 삼성전자주식회사 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들
JP5014969B2 (ja) * 2007-12-10 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置
JP5893287B2 (ja) 2011-08-10 2016-03-23 ルネサスエレクトロニクス株式会社 半導体装置および基板
US8703535B2 (en) * 2012-06-07 2014-04-22 Stats Chippac Ltd. Integrated circuit packaging system with warpage preventing mechanism and method of manufacture thereof
JP2015088576A (ja) * 2013-10-30 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
JPS4921984B1 (enExample) * 1969-05-28 1974-06-05
US3798512A (en) * 1970-09-28 1974-03-19 Ibm Fet device with guard ring and fabrication method therefor
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US3906539A (en) * 1971-09-22 1975-09-16 Philips Corp Capacitance diode having a large capacitance ratio
US3766448A (en) * 1972-02-04 1973-10-16 Gen Instrument Corp Integrated igfet circuits with increased inversion voltage under metallization runs
JPS582463B2 (ja) * 1975-12-22 1983-01-17 株式会社日立製作所 半導体ひずみ検出素子の製造方法
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS5389688A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Semiconductor device
JPS53135585A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Wiring for electronic components
US4236832A (en) * 1977-06-29 1980-12-02 Tokyo Shibaura Denki Kabushiki Kaisha Strain insensitive integrated circuit resistor pair
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
US4242698A (en) * 1977-11-02 1980-12-30 Texas Instruments Incorporated Maximum density interconnections for large scale integrated circuits
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
JPS54133090A (en) * 1978-04-07 1979-10-16 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
JPS5534444A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
JPS5553450A (en) * 1978-10-16 1980-04-18 Hitachi Ltd Semiconductor device with resin enclosure
JPS5599722A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Preparation of semiconductor device
JPS60777B2 (ja) * 1979-05-25 1985-01-10 株式会社東芝 Ｍｏｓ半導体集積回路

Also Published As

Publication number Publication date
US5023699A (en) 1991-06-11
JPS5745259A (en) 1982-03-15
GB2083283A (en) 1982-03-17
DE3134343A1 (de) 1982-06-03
HK54286A (en) 1986-08-01
IT1138522B (it) 1986-09-17
GB2083283B (en) 1984-06-20
MY8600546A (en) 1986-12-31
IT8123674A0 (it) 1981-08-28
US4625227A (en) 1986-11-25
JPS6346981B2 (enExample) 1988-09-20

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition