DE3044514C2 - - Google Patents

Info

Publication number
DE3044514C2
DE3044514C2 DE19803044514 DE3044514A DE3044514C2 DE 3044514 C2 DE3044514 C2 DE 3044514C2 DE 19803044514 DE19803044514 DE 19803044514 DE 3044514 A DE3044514 A DE 3044514A DE 3044514 C2 DE3044514 C2 DE 3044514C2
Authority
DE
Germany
Prior art keywords
layer
solder
semiconductor substrate
aluminum
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19803044514
Other languages
German (de)
English (en)
Other versions
DE3044514A1 (de
Inventor
Jin Onuki
Ko Soeno
Keiichi Morita
Hisakithi Hitachi Jp Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3044514A1 publication Critical patent/DE3044514A1/de
Application granted granted Critical
Publication of DE3044514C2 publication Critical patent/DE3044514C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
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    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15763Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550 C
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    • H01L2924/3025Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19803044514 1979-11-30 1980-11-26 Halbleiteranordnung Granted DE3044514A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15445079A JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
DE3044514A1 DE3044514A1 (de) 1981-09-03
DE3044514C2 true DE3044514C2 (en, 2012) 1989-06-22

Family

ID=15584474

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803044514 Granted DE3044514A1 (de) 1979-11-30 1980-11-26 Halbleiteranordnung

Country Status (3)

Country Link
US (1) US4500904A (en, 2012)
JP (1) JPS5678130A (en, 2012)
DE (1) DE3044514A1 (en, 2012)

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JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
WO1987005746A1 (en) * 1986-03-19 1987-09-24 Analog Devices, Incorporated Aluminum-backed wafer and chip
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
US4921158A (en) 1989-02-24 1990-05-01 General Instrument Corporation Brazing material
US5686676A (en) * 1996-05-07 1997-11-11 Brush Wellman Inc. Process for making improved copper/tungsten composites
US6897567B2 (en) 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US7181919B2 (en) * 2004-03-31 2007-02-27 Denso Corporation System utilizing waste heat of internal combustion engine
DE102005046710B4 (de) * 2005-09-29 2012-12-06 Infineon Technologies Ag Verfahren zur Herstellung einer Bauelementanordnung mit einem Träger und einem darauf montierten Halbleiterchip
JP2009182209A (ja) * 2008-01-31 2009-08-13 Nissan Motor Co Ltd 半導体装置
DE102011114530B4 (de) * 2011-09-29 2023-04-20 Waldemar Hoening Ohg Verfahren und Vorrichtung zur Herstellung einer verlötbaren Siebelektrode
JP6020496B2 (ja) * 2014-03-20 2016-11-02 株式会社豊田中央研究所 接合構造体およびその製造方法
JP6409690B2 (ja) * 2014-11-20 2018-10-24 株式会社デンソー 冷却モジュール
CN110988055A (zh) * 2019-12-08 2020-04-10 南京云优生物科技有限公司 一种痕量重金属无汞化检测装置及其电极处理方法和检测方法

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DE1248814B (de) * 1962-05-28 1968-03-14 Siemens Ag Halbleiterbauelement und zugehörige Kühlordnung
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
US3368124A (en) * 1965-12-09 1968-02-06 Rca Corp Semiconductor devices
DE1614668B2 (de) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Halbleiter-Anordnung mit Großflächigen, gut lötbaren Kontaktelektroden und Verfahren zu ihrer Herstellung
DE1903082B2 (de) * 1968-01-23 1971-09-30 Halbleiterbauelement
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
JPS4913914B1 (en, 2012) * 1969-12-25 1974-04-03
US3830657A (en) * 1971-06-30 1974-08-20 Ibm Method for making integrated circuit contact structure

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Publication number Publication date
JPS5678130A (en) 1981-06-26
DE3044514A1 (de) 1981-09-03
JPS6141135B2 (en, 2012) 1986-09-12
US4500904A (en) 1985-02-19

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