JPS6141135B2 - - Google Patents

Info

Publication number
JPS6141135B2
JPS6141135B2 JP15445079A JP15445079A JPS6141135B2 JP S6141135 B2 JPS6141135 B2 JP S6141135B2 JP 15445079 A JP15445079 A JP 15445079A JP 15445079 A JP15445079 A JP 15445079A JP S6141135 B2 JPS6141135 B2 JP S6141135B2
Authority
JP
Japan
Prior art keywords
film
electrode
semiconductor substrate
fixed
brazing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15445079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5678130A (en
Inventor
Hitoshi Oonuki
Hiroshi Soeno
Keiichi Morita
Kyukichi Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15445079A priority Critical patent/JPS5678130A/ja
Priority to DE19803044514 priority patent/DE3044514A1/de
Publication of JPS5678130A publication Critical patent/JPS5678130A/ja
Priority to US06/544,119 priority patent/US4500904A/en
Publication of JPS6141135B2 publication Critical patent/JPS6141135B2/ja
Granted legal-status Critical Current

Links

Classifications

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    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L2924/15763Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550 C
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15445079A 1979-11-30 1979-11-30 Semiconductor device and its manufacture Granted JPS5678130A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP15445079A JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture
DE19803044514 DE3044514A1 (de) 1979-11-30 1980-11-26 Halbleiteranordnung
US06/544,119 US4500904A (en) 1979-11-30 1983-10-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15445079A JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5678130A JPS5678130A (en) 1981-06-26
JPS6141135B2 true JPS6141135B2 (en, 2012) 1986-09-12

Family

ID=15584474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15445079A Granted JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture

Country Status (3)

Country Link
US (1) US4500904A (en, 2012)
JP (1) JPS5678130A (en, 2012)
DE (1) DE3044514A1 (en, 2012)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
WO1987005746A1 (en) * 1986-03-19 1987-09-24 Analog Devices, Incorporated Aluminum-backed wafer and chip
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
US4921158A (en) 1989-02-24 1990-05-01 General Instrument Corporation Brazing material
US5686676A (en) * 1996-05-07 1997-11-11 Brush Wellman Inc. Process for making improved copper/tungsten composites
US6897567B2 (en) 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US7181919B2 (en) * 2004-03-31 2007-02-27 Denso Corporation System utilizing waste heat of internal combustion engine
DE102005046710B4 (de) * 2005-09-29 2012-12-06 Infineon Technologies Ag Verfahren zur Herstellung einer Bauelementanordnung mit einem Träger und einem darauf montierten Halbleiterchip
JP2009182209A (ja) * 2008-01-31 2009-08-13 Nissan Motor Co Ltd 半導体装置
DE102011114530B4 (de) * 2011-09-29 2023-04-20 Waldemar Hoening Ohg Verfahren und Vorrichtung zur Herstellung einer verlötbaren Siebelektrode
JP6020496B2 (ja) * 2014-03-20 2016-11-02 株式会社豊田中央研究所 接合構造体およびその製造方法
JP6409690B2 (ja) * 2014-11-20 2018-10-24 株式会社デンソー 冷却モジュール
CN110988055A (zh) * 2019-12-08 2020-04-10 南京云优生物科技有限公司 一种痕量重金属无汞化检测装置及其电极处理方法和检测方法

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JPS5678130A (en) 1981-06-26
DE3044514A1 (de) 1981-09-03
US4500904A (en) 1985-02-19

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