JPS6141135B2 - - Google Patents
Info
- Publication number
- JPS6141135B2 JPS6141135B2 JP15445079A JP15445079A JPS6141135B2 JP S6141135 B2 JPS6141135 B2 JP S6141135B2 JP 15445079 A JP15445079 A JP 15445079A JP 15445079 A JP15445079 A JP 15445079A JP S6141135 B2 JPS6141135 B2 JP S6141135B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- semiconductor substrate
- fixed
- brazing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005219 brazing Methods 0.000 claims abstract description 8
- 230000005496 eutectics Effects 0.000 claims abstract description 8
- 239000007790 solid phase Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 14
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15445079A JPS5678130A (en) | 1979-11-30 | 1979-11-30 | Semiconductor device and its manufacture |
DE19803044514 DE3044514A1 (de) | 1979-11-30 | 1980-11-26 | Halbleiteranordnung |
US06/544,119 US4500904A (en) | 1979-11-30 | 1983-10-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15445079A JPS5678130A (en) | 1979-11-30 | 1979-11-30 | Semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5678130A JPS5678130A (en) | 1981-06-26 |
JPS6141135B2 true JPS6141135B2 (en, 2012) | 1986-09-12 |
Family
ID=15584474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15445079A Granted JPS5678130A (en) | 1979-11-30 | 1979-11-30 | Semiconductor device and its manufacture |
Country Status (3)
Country | Link |
---|---|
US (1) | US4500904A (en, 2012) |
JP (1) | JPS5678130A (en, 2012) |
DE (1) | DE3044514A1 (en, 2012) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921032A (ja) * | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
WO1987005746A1 (en) * | 1986-03-19 | 1987-09-24 | Analog Devices, Incorporated | Aluminum-backed wafer and chip |
US4953003A (en) * | 1987-05-21 | 1990-08-28 | Siemens Aktiengesellschaft | Power semiconductor device |
US4921158A (en) | 1989-02-24 | 1990-05-01 | General Instrument Corporation | Brazing material |
US5686676A (en) * | 1996-05-07 | 1997-11-11 | Brush Wellman Inc. | Process for making improved copper/tungsten composites |
US6897567B2 (en) | 2000-07-31 | 2005-05-24 | Romh Co., Ltd. | Method of making wireless semiconductor device, and leadframe used therefor |
US7181919B2 (en) * | 2004-03-31 | 2007-02-27 | Denso Corporation | System utilizing waste heat of internal combustion engine |
DE102005046710B4 (de) * | 2005-09-29 | 2012-12-06 | Infineon Technologies Ag | Verfahren zur Herstellung einer Bauelementanordnung mit einem Träger und einem darauf montierten Halbleiterchip |
JP2009182209A (ja) * | 2008-01-31 | 2009-08-13 | Nissan Motor Co Ltd | 半導体装置 |
DE102011114530B4 (de) * | 2011-09-29 | 2023-04-20 | Waldemar Hoening Ohg | Verfahren und Vorrichtung zur Herstellung einer verlötbaren Siebelektrode |
JP6020496B2 (ja) * | 2014-03-20 | 2016-11-02 | 株式会社豊田中央研究所 | 接合構造体およびその製造方法 |
JP6409690B2 (ja) * | 2014-11-20 | 2018-10-24 | 株式会社デンソー | 冷却モジュール |
CN110988055A (zh) * | 2019-12-08 | 2020-04-10 | 南京云优生物科技有限公司 | 一种痕量重金属无汞化检测装置及其电极处理方法和检测方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1248814B (de) * | 1962-05-28 | 1968-03-14 | Siemens Ag | Halbleiterbauelement und zugehörige Kühlordnung |
US3341753A (en) * | 1964-10-21 | 1967-09-12 | Texas Instruments Inc | Metallic contacts for semiconductor devices |
US3297921A (en) * | 1965-04-15 | 1967-01-10 | Int Rectifier Corp | Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer |
US3368124A (en) * | 1965-12-09 | 1968-02-06 | Rca Corp | Semiconductor devices |
DE1614668B2 (de) * | 1967-12-01 | 1974-08-29 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Halbleiter-Anordnung mit Großflächigen, gut lötbaren Kontaktelektroden und Verfahren zu ihrer Herstellung |
DE1903082B2 (de) * | 1968-01-23 | 1971-09-30 | Halbleiterbauelement | |
US3609470A (en) * | 1968-02-19 | 1971-09-28 | Ibm | Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum |
JPS4913914B1 (en, 2012) * | 1969-12-25 | 1974-04-03 | ||
US3830657A (en) * | 1971-06-30 | 1974-08-20 | Ibm | Method for making integrated circuit contact structure |
-
1979
- 1979-11-30 JP JP15445079A patent/JPS5678130A/ja active Granted
-
1980
- 1980-11-26 DE DE19803044514 patent/DE3044514A1/de active Granted
-
1983
- 1983-10-20 US US06/544,119 patent/US4500904A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3044514C2 (en, 2012) | 1989-06-22 |
JPS5678130A (en) | 1981-06-26 |
DE3044514A1 (de) | 1981-09-03 |
US4500904A (en) | 1985-02-19 |
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