DE3016176C2 - Prüfschaltung für löschbare programmierbare Festwertspeicher - Google Patents

Prüfschaltung für löschbare programmierbare Festwertspeicher

Info

Publication number
DE3016176C2
DE3016176C2 DE3016176A DE3016176A DE3016176C2 DE 3016176 C2 DE3016176 C2 DE 3016176C2 DE 3016176 A DE3016176 A DE 3016176A DE 3016176 A DE3016176 A DE 3016176A DE 3016176 C2 DE3016176 C2 DE 3016176C2
Authority
DE
Germany
Prior art keywords
voltage
transistor
input
gate
eprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3016176A
Other languages
German (de)
English (en)
Other versions
DE3016176A1 (de
Inventor
Antony Geoffrey Sunnyvale Calif. Bell
Rajesh Haribhgi San Jose Calif. Parekh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE3016176A1 publication Critical patent/DE3016176A1/de
Application granted granted Critical
Publication of DE3016176C2 publication Critical patent/DE3016176C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE3016176A 1979-05-14 1980-04-26 Prüfschaltung für löschbare programmierbare Festwertspeicher Expired DE3016176C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/039,096 US4253059A (en) 1979-05-14 1979-05-14 EPROM Reliability test circuit

Publications (2)

Publication Number Publication Date
DE3016176A1 DE3016176A1 (de) 1980-11-27
DE3016176C2 true DE3016176C2 (de) 1985-02-21

Family

ID=21903649

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3016176A Expired DE3016176C2 (de) 1979-05-14 1980-04-26 Prüfschaltung für löschbare programmierbare Festwertspeicher

Country Status (6)

Country Link
US (1) US4253059A (OSRAM)
JP (1) JPS6032920B2 (OSRAM)
DE (1) DE3016176C2 (OSRAM)
FR (1) FR2456993A1 (OSRAM)
GB (1) GB2049202B (OSRAM)
IT (1) IT1128768B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4311120A1 (de) * 1992-06-29 1994-01-05 Mitsubishi Electric Corp Nichtflüchtiger Halbleiterspeicher

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2905294A1 (de) * 1979-02-12 1980-08-21 Philips Patentverwaltung Integrierte schaltungsanordnung in mos-technik mit feldeffekttransistoren
US4301535A (en) * 1979-07-02 1981-11-17 Mostek Corporation Programmable read only memory integrated circuit with bit-check and deprogramming modes and methods for programming and testing said circuit
JPS5693189A (en) 1979-12-18 1981-07-28 Fujitsu Ltd Field programable element
DE3030852A1 (de) * 1980-08-14 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung fuer die pruefung von speicherzellen programmierbarer mos-integrierter halbleiterspeicher
JPS6035760B2 (ja) * 1980-12-18 1985-08-16 富士通株式会社 半導体記憶装置
IE54406B1 (en) * 1980-12-23 1989-09-27 Fujitsu Ltd Electrically programmable non-colatile semiconductor memory device
AR231673A1 (es) * 1980-12-24 1985-01-31 Olivetti & Co Spa Caja registradora electronica no adulterable
JPS57117184A (en) * 1981-01-13 1982-07-21 Citizen Watch Co Ltd Non-volatile memory circuit for portable electronic device
US4503538A (en) * 1981-09-04 1985-03-05 Robert Bosch Gmbh Method and system to recognize change in the storage characteristics of a programmable memory
JPS5853775A (ja) * 1981-09-26 1983-03-30 Fujitsu Ltd Ｉｃメモリ試験方法
JPS5936393A (ja) * 1982-08-20 1984-02-28 Mitsubishi Electric Corp 不揮発性半導体メモリ装置
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
FR2580421A1 (fr) * 1985-04-12 1986-10-17 Eurotechnique Sa Memoire morte programmable electriquement
JPS62170094A (ja) * 1986-01-21 1987-07-27 Mitsubishi Electric Corp 半導体記憶回路
US4749947A (en) * 1986-03-10 1988-06-07 Cross-Check Systems, Inc. Grid-based, "cross-check" test structure for testing integrated circuits
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5341092A (en) * 1986-09-19 1994-08-23 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5223792A (en) * 1986-09-19 1993-06-29 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
JP2534733B2 (ja) * 1987-10-09 1996-09-18 日本電気株式会社 不揮発性半導体記憶装置
FR2623653B1 (fr) * 1987-11-24 1992-10-23 Sgs Thomson Microelectronics Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant
JPH0213529U (OSRAM) * 1988-07-09 1990-01-29
US5065090A (en) * 1988-07-13 1991-11-12 Cross-Check Technology, Inc. Method for testing integrated circuits having a grid-based, "cross-check" te
US5195099A (en) * 1989-04-11 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having improved error correcting circuit
DE69034191T2 (de) * 1989-04-13 2005-11-24 Sandisk Corp., Sunnyvale EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
JP2558904B2 (ja) * 1990-01-19 1996-11-27 株式会社東芝 半導体集積回路
US5321701A (en) * 1990-12-06 1994-06-14 Teradyne, Inc. Method and apparatus for a minimal memory in-circuit digital tester
US5528600A (en) * 1991-01-28 1996-06-18 Actel Corporation Testability circuits for logic arrays
KR940006676B1 (ko) * 1991-10-14 1994-07-25 삼성전자 주식회사 시험회로를 내장한 기억용 반도체 집적회로
US5621738A (en) * 1991-12-10 1997-04-15 Eastman Kodak Company Method for programming flash EEPROM devices
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5294882A (en) * 1992-07-28 1994-03-15 Sharp Kabushiki Kaisha Integrated circuit capable of testing reliability
FR2694404B1 (fr) * 1992-07-31 1994-09-09 Sgs Thomson Microelectronics Procédé de mesure des tensions de seuil des cellules d'une mémoire intégrée.
DE69427686T2 (de) * 1994-03-31 2002-04-25 Stmicroelectronics S.R.L., Agrate Brianza Schaltungsanordnung zum Messen der Schwellenspannungaufteilung von nicht-flüchtigen Speicherzellen
GB2321737A (en) * 1997-01-30 1998-08-05 Motorola Inc Circuit and method of measuring the negative threshold voltage of a non-volatile memory cell
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US5966330A (en) * 1998-04-30 1999-10-12 Eon Silicon Devices, Inc. Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias
JP2000339977A (ja) * 1999-05-28 2000-12-08 Nec Corp データ設定方法および装置、データ記憶装置、情報記憶媒体
JP2001006379A (ja) * 1999-06-16 2001-01-12 Fujitsu Ltd 複写、移動機能を有するフラッシュメモリ
JP3755346B2 (ja) * 1999-07-26 2006-03-15 富士通株式会社 不揮発性半導体記憶装置
US6134160A (en) * 1999-09-27 2000-10-17 Texas Instruments Incorporated Memory device architecture having global memory array repair capabilities
US6201737B1 (en) * 2000-01-28 2001-03-13 Advanced Micro Devices, Inc. Apparatus and method to characterize the threshold distribution in an NROM virtual ground array
US6594192B1 (en) * 2000-08-31 2003-07-15 Stmicroelectronics, Inc. Integrated volatile and non-volatile memory
US6574158B1 (en) 2001-09-27 2003-06-03 Cypress Semiconductor Corp. Method and system for measuring threshold of EPROM cells
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3122724A (en) * 1960-06-17 1964-02-25 Ibm Magnetic memory sensing system
US3478286A (en) * 1965-07-01 1969-11-11 Ibm System for automatically testing computer memories
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors
GB2002129B (en) * 1977-08-03 1982-01-20 Sperry Rand Corp Apparatus for testing semiconductor memories
US4130897A (en) * 1977-08-03 1978-12-19 Sperry Rand Corporation MNOS FET memory retention characterization test circuit with enhanced sensitivity and power conservation
US4127901A (en) * 1977-08-03 1978-11-28 Sperry Rand Corporation MNOS FET memory retention characterization test circuit
US4141081A (en) * 1978-01-03 1979-02-20 Sperry Rand Corporation MNOS BORAM sense amplifier/latch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4311120A1 (de) * 1992-06-29 1994-01-05 Mitsubishi Electric Corp Nichtflüchtiger Halbleiterspeicher
US5357472A (en) * 1992-06-29 1994-10-18 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
FR2456993A1 (fr) 1980-12-12
GB2049202B (en) 1983-05-25
FR2456993B1 (OSRAM) 1985-04-05
JPS6032920B2 (ja) 1985-07-31
US4253059A (en) 1981-02-24
JPS55153200A (en) 1980-11-28
IT8067600A0 (it) 1980-04-17
IT1128768B (it) 1986-06-04
DE3016176A1 (de) 1980-11-27
GB2049202A (en) 1980-12-17

Similar Documents

Publication Publication Date Title
DE3016176C2 (de) Prüfschaltung für löschbare programmierbare Festwertspeicher
DE69514790T2 (de) Verfahren zur Einstellung der Schwellspannung einer Referenzspeicherzelle
DE60130012T2 (de) Beschreibbare verfolgungszellen
DE3877475T2 (de) Eeprom-system mit bitfehlererkennungsfunktion.
DE69027065T2 (de) Halbleiterspeicheranordnung
DE4036973C2 (de) Schaltung zur Erzeugung einer gegenüber einer extern zugeführten Versorgungsspannung erhöhten Lösch- oder Programmierspannung in einer Halbleiter-Speicherschaltung
DE69604929T2 (de) Flash-eeprom-speicher mit getrennter referenzmatix
DE3872673T2 (de) Verfahren zum testen von zellen von elektrisch programmierbaren speichern und entsprechende integrierte schaltung.
DE69122537T2 (de) EEPROM mit Schwellwertmessschaltung
DE68918880T2 (de) Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung.
DE3786819T2 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE3041176A1 (de) Halbleiterspeichervorrichtung
DE3936676A1 (de) Pufferschaltkreis fuer eine mit verschiedenen versorgungspotentialen arbeitende halbleitereinrichtung und verfahren zu deren betrieb
DE19631169C2 (de) Matrix-Speicher in Virtual-ground-Architektur
DE19860506A1 (de) System und Verfahren zum Programmieren eines nichtflüchtigen Speichers
DE3035484C2 (de) Leseschaltung
DE102005037287B3 (de) Nicht-flüchtiger Halbleiterspeicher und Verfahren zum Bestimmen einer Lesespannung zum Auslesen von Daten aus derartigen Speichern
DE102008019927A1 (de) Symmetrischer Differenzstrom-Leseverstärker
DE102019208419B4 (de) Speicheranordnung mit verteilten Referenzzellen zur Stromerfassung
DE69100120T2 (de) Ultrahochgeschwindigkeitsspeicher mit Drainspannungsbegrenzer für Zellen.
DE102007013069A1 (de) Nicht-flüchtige Speichereinrichtung mit interner Teststeuereinheit und Verfahren zum Prüfen und Reparieren eines Zellenfeldes
DE4121053A1 (de) Einmal programmierbare eeprom-zelle
DE69014821T2 (de) Nichtflüchtige Speicheranordung.
DE10034230B4 (de) Leseverstärkerschaltung zur Verwendung in einem nicht-flüchtigen Halbleiterspeicherbauelement
DE69220979T2 (de) Anordnung für die Detektion des logischen Zustandes eines Bauteiles, dessen Impedanz sich in Abhängigkeit von seinen Zustand ändert

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee