DE2947669C2 - Optisch zündbarer planarer PNPN-Halbleiterschalter - Google Patents

Optisch zündbarer planarer PNPN-Halbleiterschalter

Info

Publication number
DE2947669C2
DE2947669C2 DE2947669A DE2947669A DE2947669C2 DE 2947669 C2 DE2947669 C2 DE 2947669C2 DE 2947669 A DE2947669 A DE 2947669A DE 2947669 A DE2947669 A DE 2947669A DE 2947669 C2 DE2947669 C2 DE 2947669C2
Authority
DE
Germany
Prior art keywords
zone
semiconductor switch
conductive
base
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2947669A
Other languages
German (de)
English (en)
Other versions
DE2947669A1 (de
Inventor
Kazuo Hagimura
Kotaro Chofu Kato
Haruo Mori
Jun Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph And Telephone Corp Oki Electric
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Publication of DE2947669A1 publication Critical patent/DE2947669A1/de
Application granted granted Critical
Publication of DE2947669C2 publication Critical patent/DE2947669C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Electronic Switches (AREA)
DE2947669A 1978-11-28 1979-11-27 Optisch zündbarer planarer PNPN-Halbleiterschalter Expired DE2947669C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14605878A JPS5574168A (en) 1978-11-28 1978-11-28 Pnpn switch

Publications (2)

Publication Number Publication Date
DE2947669A1 DE2947669A1 (de) 1980-06-12
DE2947669C2 true DE2947669C2 (de) 1987-01-15

Family

ID=15399124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2947669A Expired DE2947669C2 (de) 1978-11-28 1979-11-27 Optisch zündbarer planarer PNPN-Halbleiterschalter

Country Status (4)

Country Link
US (1) US4244000A (pt-PT)
JP (1) JPS5574168A (pt-PT)
DE (1) DE2947669C2 (pt-PT)
FR (1) FR2443172A1 (pt-PT)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
DE3018499A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3019883A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Zweirichtungsthyristor
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3118318A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb
DE3118364A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit optoelektronisch angesteuerten emitterkurzschluessen und verfahren zu seinem betrieb
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118291A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Triac und verfahren zu seinem betrieb
JPS583285A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 半導体集積回路の保護装置
DE3131894A1 (de) * 1981-08-12 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Zuendschaltung fuer einen leistungsthyristor
JPS5846678A (ja) * 1981-09-14 1983-03-18 Oki Electric Ind Co Ltd Ｐｎｐｎ半導体スイツチ
DE3138763A1 (de) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3369431D1 (en) * 1982-02-09 1987-02-26 Western Electric Co Field-effect controlled bi-directional lateral thyristor
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region
EP0107773B1 (en) * 1982-10-04 1987-03-11 General Electric Company Thyristor with turn-off capability
EP0110776A1 (fr) * 1982-11-25 1984-06-13 Telemecanique Circuit de commande d'un dispositif à semi-conducteur sensible du type thyristor ou triac, avec impédance d'assistance à l'auto-allumage
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
SE8306952L (sv) * 1982-12-21 1984-06-22 Int Rectifier Corp Halvledarrele for vexelstrom
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
US4612562A (en) * 1984-06-05 1986-09-16 Kabushiki Kaisha Toshiba PNPN switch device with capacitor formed outside active device areas
US4941029A (en) * 1985-02-27 1990-07-10 Westinghouse Electric Corp. High resistance optical shield for visible sensors
JPS61285821A (ja) * 1985-06-11 1986-12-16 シ−メンス、アクチエンゲゼルシヤフト 電子スイツチ
JPH0758776B2 (ja) * 1986-08-22 1995-06-21 株式会社日立製作所 複合半導体装置
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
US5446295A (en) * 1993-08-23 1995-08-29 Siemens Components, Inc. Silicon controlled rectifier with a variable base-shunt resistant
US5652439A (en) * 1993-12-03 1997-07-29 Imec Fast electrical complete turn-off optical device
TW359024B (en) * 1996-05-28 1999-05-21 Winbond Electronics Corp Stage silicon control rectifier protection circuit and the structure
JP3352349B2 (ja) * 1997-02-24 2002-12-03 シャープ株式会社 双方向サイリスタ素子
US6351020B1 (en) * 1999-11-12 2002-02-26 Motorola, Inc. Linear capacitor structure in a CMOS process
FR2819102B1 (fr) * 2000-12-29 2003-04-04 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par impulsions
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7075520B2 (en) * 2001-12-12 2006-07-11 Zi Technology Corporation Ltd Key press disambiguation using a keypad of multidirectional keys
US20040153975A1 (en) * 2003-02-05 2004-08-05 Williams Roland E. Text entry mechanism for small keypads
US20040153963A1 (en) * 2003-02-05 2004-08-05 Simpson Todd G. Information entry mechanism for small keypads
US7423298B2 (en) * 2004-03-17 2008-09-09 Sharp Kabushiki Kaisha Bidirectional photothyristor chip, optical lighting coupler, and solid state relay
EP1774620B1 (en) 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integrated rf front end
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
EP3346611B1 (en) 2008-02-28 2021-09-22 pSemi Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9343568B2 (en) * 2014-05-12 2016-05-17 Macronix International Co., Ltd. Semiconductor device having high-resistance conductor structure, method of manufacturing the same and method of operating the same
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7003606A (pt-PT) * 1969-03-19 1970-09-22
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
NL7112583A (pt-PT) * 1970-09-14 1972-03-16
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
GB1480201A (en) * 1975-01-06 1977-07-20 Ncr Co Four zone semiconductor device
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5943831B2 (ja) * 1975-12-08 1984-10-24 株式会社日立製作所 ハンドウタイシユウセキカイロ

Also Published As

Publication number Publication date
FR2443172B1 (pt-PT) 1985-05-17
DE2947669A1 (de) 1980-06-12
FR2443172A1 (fr) 1980-06-27
JPS5759673B2 (pt-PT) 1982-12-15
US4244000A (en) 1981-01-06
JPS5574168A (en) 1980-06-04

Similar Documents

Publication Publication Date Title
DE2947669C2 (de) Optisch zündbarer planarer PNPN-Halbleiterschalter
DE3708812C2 (pt-PT)
EP0118785B1 (de) Zweipoliger Überstromschutz
DE2257846B2 (de) Integrierte Halbleiteranordnung zum Schutz gegen Überspannung
DE68923789T2 (de) Optische halbleitervorrichtung mit einer nulldurchgangsfunktion.
DE3125470C2 (pt-PT)
DE3521079C2 (pt-PT)
DE19528998C2 (de) Bidirektionaler Halbleiterschalter und Verfahren zu seiner Steuerung
EP0520355B1 (de) Mittels Steuerelektrode abschaltbares Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
DE69119261T2 (de) Halbleiter-Relais-Schaltung
DE2349986A1 (de) Kapazitaetsschaltung
DE2822336C3 (de) Thyristoranordnung
DE2739187C2 (de) Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps
DE3838964A1 (de) Kaskoden bimos-treiberschaltung
DE3120254C2 (pt-PT)
DE2238564A1 (de) Thyristor
DE2929869C2 (de) Monolithisch integrierte CMOS-Inverterschaltungsanordnung
EP0075720B1 (de) Lichtzündbarer Thyristor mit steuerbaren Emitter-Kurzschlüssen und Zündverstärkung
DE2722064C2 (de) Lichtzündbarer Thyristor
DE2009358A1 (de) Halbleiterbauelement mit einer integrierten Impulstorschaltung und Verfahren zur Herstellung dieses Bauelements
DE3102916C2 (de) Thyristor
DE3000891A1 (de) Halbleiterbaustein mit gattersteuerung
DE3120124C2 (pt-PT)
DE2431523C3 (de) Halbleiter-Sprechweg-Schaltanordnung
DE4105646A1 (de) Verfahren zum herstellen eines optisch getriggerten lateralen thyristors

Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8127 New person/name/address of the applicant

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP. OKI ELECTRIC

8128 New person/name/address of the agent

Representative=s name: REICHEL, W., DIPL.-ING. LIPPERT, H., DIPL.-ING., P

8125 Change of the main classification

Ipc: H01L 31/10

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee
8328 Change in the person/name/address of the agent

Free format text: REICHEL, W., DIPL.-ING., PAT.-ANW., 60322 FRANKFURT