DE2722064C2 - - Google Patents

Info

Publication number
DE2722064C2
DE2722064C2 DE19772722064 DE2722064A DE2722064C2 DE 2722064 C2 DE2722064 C2 DE 2722064C2 DE 19772722064 DE19772722064 DE 19772722064 DE 2722064 A DE2722064 A DE 2722064A DE 2722064 C2 DE2722064 C2 DE 2722064C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19772722064
Other versions
DE2722064A1 (de
Inventor
Roland Dr. Umiken Aargau Ch Sittig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE2722064A1 publication Critical patent/DE2722064A1/de
Application granted granted Critical
Publication of DE2722064C2 publication Critical patent/DE2722064C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
DE19772722064 1977-04-15 1977-05-16 Thyristor Granted DE2722064A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH468077A CH614811A5 (en) 1977-04-15 1977-04-15 Thyristor

Publications (2)

Publication Number Publication Date
DE2722064A1 DE2722064A1 (de) 1978-10-19
DE2722064C2 true DE2722064C2 (de) 1987-04-23

Family

ID=4280608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772722064 Granted DE2722064A1 (de) 1977-04-15 1977-05-16 Thyristor

Country Status (2)

Country Link
CH (1) CH614811A5 (de)
DE (1) DE2722064A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2830735C2 (de) * 1978-07-13 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung
CH634442A5 (de) * 1978-11-15 1983-01-31 Bbc Brown Boveri & Cie Lichtzuendbarer thyristor.
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement
JPS5994869A (ja) * 1982-11-24 1984-05-31 Toshiba Corp 光点弧形双方向サイリスタ
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen
FR2586141B1 (fr) * 1985-08-06 1987-11-20 Thomson Csf Thyristor sensible a decouplage gachette-cathode integre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH567803A5 (de) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor

Also Published As

Publication number Publication date
CH614811A5 (en) 1979-12-14
DE2722064A1 (de) 1978-10-19

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 31/10

D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: BBC BROWN BOVERI AG, BADEN, AARGAU, CH

8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8339 Ceased/non-payment of the annual fee