CH614811A5 - Thyristor - Google Patents

Thyristor

Info

Publication number
CH614811A5
CH614811A5 CH468077A CH468077A CH614811A5 CH 614811 A5 CH614811 A5 CH 614811A5 CH 468077 A CH468077 A CH 468077A CH 468077 A CH468077 A CH 468077A CH 614811 A5 CH614811 A5 CH 614811A5
Authority
CH
Switzerland
Prior art keywords
thyristor
Prior art date
Application number
CH468077A
Other languages
English (en)
Inventor
Roland Dr Sittig
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH468077A priority Critical patent/CH614811A5/xx
Priority to DE19772722064 priority patent/DE2722064A1/de
Priority to SU772487355A priority patent/SU793421A3/ru
Priority to US05/802,476 priority patent/US4142201A/en
Priority to JP52065262A priority patent/JPS603790B2/ja
Publication of CH614811A5 publication Critical patent/CH614811A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
CH468077A 1976-06-02 1977-04-15 Thyristor CH614811A5 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH468077A CH614811A5 (en) 1977-04-15 1977-04-15 Thyristor
DE19772722064 DE2722064A1 (de) 1977-04-15 1977-05-16 Thyristor
SU772487355A SU793421A3 (ru) 1976-06-02 1977-05-30 Фототиристор
US05/802,476 US4142201A (en) 1976-06-02 1977-06-01 Light-controlled thyristor with anode-base surface firing
JP52065262A JPS603790B2 (ja) 1976-06-02 1977-06-02 サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH468077A CH614811A5 (en) 1977-04-15 1977-04-15 Thyristor

Publications (1)

Publication Number Publication Date
CH614811A5 true CH614811A5 (en) 1979-12-14

Family

ID=4280608

Family Applications (1)

Application Number Title Priority Date Filing Date
CH468077A CH614811A5 (en) 1976-06-02 1977-04-15 Thyristor

Country Status (2)

Country Link
CH (1) CH614811A5 (xx)
DE (1) DE2722064A1 (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2830735C2 (de) * 1978-07-13 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung
CH634442A5 (de) * 1978-11-15 1983-01-31 Bbc Brown Boveri & Cie Lichtzuendbarer thyristor.
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement
JPS5994869A (ja) * 1982-11-24 1984-05-31 Toshiba Corp 光点弧形双方向サイリスタ
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen
FR2586141B1 (fr) * 1985-08-06 1987-11-20 Thomson Csf Thyristor sensible a decouplage gachette-cathode integre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH567803A5 (xx) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor

Also Published As

Publication number Publication date
DE2722064A1 (de) 1978-10-19
DE2722064C2 (xx) 1987-04-23

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Legal Events

Date Code Title Description
PL Patent ceased