GB1480201A - Four zone semiconductor device - Google Patents

Four zone semiconductor device

Info

Publication number
GB1480201A
GB1480201A GB5081575A GB5081575A GB1480201A GB 1480201 A GB1480201 A GB 1480201A GB 5081575 A GB5081575 A GB 5081575A GB 5081575 A GB5081575 A GB 5081575A GB 1480201 A GB1480201 A GB 1480201A
Authority
GB
United Kingdom
Prior art keywords
zone
storage means
charge storage
control electrode
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5081575A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of GB1480201A publication Critical patent/GB1480201A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Thyristors (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1480201 Semi-conductor memory device NCR CORP 11 Dec 1975 [6 Jan 1975] 50815/75 Heading H1K A programmable memory device consists of a PNPN semi-conductor zone structure with electrodes on its end zones and a charge storage means bridging one of the inner zones and separated from said zone and an overlying control electrode by dielectric material. The charge storage means may be constituted by a floating layer of aluminium embedded in aluminium oxide, or disposed between a thin silicon dioxide layer adjacent the zone and a thicker silicon nitride layer separating it from the control electrode, or by the interface between layers of silicon dioxide and silicon nitride. The mode of operation of a random access matrix memory array incorporating such devices is described. Specifications 1,055,682 and 1,367,325 are referred to.
GB5081575A 1975-01-06 1975-12-11 Four zone semiconductor device Expired GB1480201A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53866275A 1975-01-06 1975-01-06

Publications (1)

Publication Number Publication Date
GB1480201A true GB1480201A (en) 1977-07-20

Family

ID=24147887

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5081575A Expired GB1480201A (en) 1975-01-06 1975-12-11 Four zone semiconductor device

Country Status (5)

Country Link
JP (1) JPS5193680A (en)
DE (1) DE2558626A1 (en)
FR (1) FR2296939A1 (en)
GB (1) GB1480201A (en)
NL (1) NL7600049A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
US4398338A (en) * 1980-12-24 1983-08-16 Fairchild Camera & Instrument Corp. Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques
JPS59211271A (en) * 1983-05-17 1984-11-30 Toshiba Corp Semiconductor device
JPS59213167A (en) * 1983-05-19 1984-12-03 Nec Corp Thyristor
WO1986007487A1 (en) * 1985-06-07 1986-12-18 Anamartic Limited Electrical data storage elements
US7224002B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949581A (en) * 1972-09-16 1974-05-14

Also Published As

Publication number Publication date
NL7600049A (en) 1976-07-08
FR2296939B1 (en) 1978-06-30
JPS5193680A (en) 1976-08-17
FR2296939A1 (en) 1976-07-30
DE2558626A1 (en) 1976-07-08

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee