JPS5193680A - ****te*****shi*** ***ho - Google Patents
****te*****shi*** ***hoInfo
- Publication number
- JPS5193680A JPS5193680A JP75376A JP75376A JPS5193680A JP S5193680 A JPS5193680 A JP S5193680A JP 75376 A JP75376 A JP 75376A JP 75376 A JP75376 A JP 75376A JP S5193680 A JPS5193680 A JP S5193680A
- Authority
- JP
- Japan
- Prior art keywords
- shi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Read Only Memory (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53866275A | 1975-01-06 | 1975-01-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5193680A true JPS5193680A (en) | 1976-08-17 |
Family
ID=24147887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP75376A Pending JPS5193680A (en) | 1975-01-06 | 1976-01-05 | ****te*****shi*** ***ho |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5193680A (en) |
DE (1) | DE2558626A1 (en) |
FR (1) | FR2296939A1 (en) |
GB (1) | GB1480201A (en) |
NL (1) | NL7600049A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211271A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Semiconductor device |
JP2007536737A (en) * | 2004-05-06 | 2007-12-13 | マイクロン テクノロジー, インク. | Silicon-on-insulator read-write nonvolatile memory with lateral thyristor and trapping layer |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
US4398338A (en) * | 1980-12-24 | 1983-08-16 | Fairchild Camera & Instrument Corp. | Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques |
JPS59213167A (en) * | 1983-05-19 | 1984-12-03 | Nec Corp | Thyristor |
EP0225366A1 (en) * | 1985-06-07 | 1987-06-16 | Anamartic Limited | Electrical data storage elements |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4949581A (en) * | 1972-09-16 | 1974-05-14 |
-
1975
- 1975-12-11 GB GB5081575A patent/GB1480201A/en not_active Expired
- 1975-12-24 DE DE19752558626 patent/DE2558626A1/en active Pending
-
1976
- 1976-01-05 JP JP75376A patent/JPS5193680A/en active Pending
- 1976-01-05 FR FR7600060A patent/FR2296939A1/en active Granted
- 1976-01-05 NL NL7600049A patent/NL7600049A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4949581A (en) * | 1972-09-16 | 1974-05-14 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211271A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Semiconductor device |
JP2007536737A (en) * | 2004-05-06 | 2007-12-13 | マイクロン テクノロジー, インク. | Silicon-on-insulator read-write nonvolatile memory with lateral thyristor and trapping layer |
JP4915592B2 (en) * | 2004-05-06 | 2012-04-11 | マイクロン テクノロジー, インク. | Silicon-on-insulator read-write nonvolatile memory with lateral thyristor and trapping layer |
Also Published As
Publication number | Publication date |
---|---|
FR2296939A1 (en) | 1976-07-30 |
GB1480201A (en) | 1977-07-20 |
FR2296939B1 (en) | 1978-06-30 |
DE2558626A1 (en) | 1976-07-08 |
NL7600049A (en) | 1976-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5195758A (en) | **he********* ****he*****shi*ho******** | |
JPS5190545A (en) | Maikurosutoritsupu * maikuroraininpiidansuhenseiki | |
JPS5198264A (en) | **o*tsu* *******shi*** *******tsu*************no | |
JPS5198218A (en) | ****** ******e | |
JPS5196732A (en) | **** *te***ko** | |
JPS5192917A (en) | ****** *************e*****no******** | |
JPS5198244A (en) | ************** ** | |
JPS5196648A (en) | ******** ***o** | |
JPS5195719A (en) | **** ***************ho*****shi | |
JPS5195575A (en) | * *************** | |
JPS51105406A (en) | Senishiito * b * noseizoho | |
ZA761381B (en) | Seismonastic switches | |
JPS5195062A (en) | *********** * ***e** | |
JPS5198548A (en) | ****** **** | |
JPS5193680A (en) | ****te*****shi*** ***ho | |
JPS5195881A (en) | ****ho*********** **so***ko** | |
JPS5196888A (en) | ** *************ne*****no*ho*********he***********hi**** | |
JPS5197278A (en) | ****o*** **te*****no | |
GB1541487A (en) | Time switches | |
AU1604876A (en) | Switches | |
JPS5182028A (en) | Tansenioyobi * mataha parupuryushinoseizoho | |
JPS5199905A (en) | Chokuheiretsu * heichokuretsuhenkanhoshiki | |
JPS5180091A (en) | Nenchakukenmashi * matahanuno * | |
JPS5198236A (en) | ****no*** ********************nu**** ************ *su* **te*****no | |
JPS51108500A (en) | Rooru * yooofusetsutosurasutanyoru nyuuteeshongensuihoshiki |