DE69119261T2 - Halbleiter-Relais-Schaltung - Google Patents
Halbleiter-Relais-SchaltungInfo
- Publication number
- DE69119261T2 DE69119261T2 DE69119261T DE69119261T DE69119261T2 DE 69119261 T2 DE69119261 T2 DE 69119261T2 DE 69119261 T DE69119261 T DE 69119261T DE 69119261 T DE69119261 T DE 69119261T DE 69119261 T2 DE69119261 T2 DE 69119261T2
- Authority
- DE
- Germany
- Prior art keywords
- relay circuit
- semiconductor relay
- semiconductor
- circuit
- relay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/291—Applications
- Y10S136/293—Circuits
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2034567A JPH03238918A (ja) | 1990-02-15 | 1990-02-15 | 半導体リレー回路 |
JP28946390A JPH0812992B2 (ja) | 1990-10-26 | 1990-10-26 | 半導体リレー回路 |
JP2289464A JPH0812993B2 (ja) | 1990-10-26 | 1990-10-26 | 半導体リレー回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69119261D1 DE69119261D1 (de) | 1996-06-13 |
DE69119261T2 true DE69119261T2 (de) | 1996-10-31 |
Family
ID=27288453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69119261T Expired - Fee Related DE69119261T2 (de) | 1990-02-15 | 1991-02-05 | Halbleiter-Relais-Schaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5151602A (de) |
EP (1) | EP0442561B1 (de) |
KR (1) | KR950000320B1 (de) |
CA (1) | CA2035496C (de) |
DE (1) | DE69119261T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5306955A (en) * | 1991-04-22 | 1994-04-26 | Control Products, Inc. | Two-wire, electronic switch |
US5278422A (en) * | 1991-09-02 | 1994-01-11 | Matsushita Electric Works, Ltd. | Normally open solid state relay with minimized response time of relay action upon being turned off |
US5221847A (en) * | 1992-06-26 | 1993-06-22 | At&T Bell Laboratories | Break-before-make control for form C solid-state relays with current limiter bypass |
DE4237489A1 (de) * | 1992-11-06 | 1994-05-11 | Bosch Gmbh Robert | Schaltung zum Schutz eines MOSFET-Leistungstransistors |
JP2801825B2 (ja) * | 1993-01-14 | 1998-09-21 | 株式会社東芝 | フォトカプラ装置 |
GB2279524A (en) * | 1993-06-22 | 1995-01-04 | Philips Electronics Uk Ltd | Gate control circuit for power MOSFET |
JPH0879041A (ja) * | 1994-08-31 | 1996-03-22 | Oki Electric Ind Co Ltd | 光半導体リレーとこれを用いたコントローラ、電力供給装置及び端末装置切換装置 |
US5549762A (en) * | 1995-01-13 | 1996-08-27 | International Rectifier Corporation | Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers |
US6037602A (en) * | 1998-02-13 | 2000-03-14 | C.P. Clare Corporation | Photovoltaic generator circuit and method of making same |
US5969581A (en) * | 1998-05-28 | 1999-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Opto-electronically controlled RF waveguide |
US6555935B1 (en) * | 2000-05-18 | 2003-04-29 | Rockwell Automation Technologies, Inc. | Apparatus and method for fast FET switching in a digital output device |
US20080238354A1 (en) * | 2007-03-29 | 2008-10-02 | Kinpo Electronics, Inc. | Solar energy charging device for computer |
JP5027680B2 (ja) * | 2008-01-18 | 2012-09-19 | パナソニック株式会社 | 半導体リレーモジュール |
US7615396B1 (en) | 2008-04-28 | 2009-11-10 | Eugene Ching Lee | Photodiode stack for photo MOS relay using junction isolation technology |
CN102332900B (zh) * | 2011-10-28 | 2012-11-07 | 电子科技大学 | 一种固体继电器 |
US10003260B2 (en) * | 2015-06-23 | 2018-06-19 | Nxp Usa, Inc. | Semiconductor devices and methods for dead time optimization by measuring gate driver response time |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4277098A (en) * | 1978-09-18 | 1981-07-07 | Lloyd Gibney | Foldable truck cap assembly |
US4390790A (en) * | 1979-08-09 | 1983-06-28 | Theta-J Corporation | Solid state optically coupled electrical power switch |
US4804866A (en) * | 1986-03-24 | 1989-02-14 | Matsushita Electric Works, Ltd. | Solid state relay |
US4801822A (en) * | 1986-08-11 | 1989-01-31 | Matsushita Electric Works, Ltd. | Semiconductor switching circuit |
JPS6481522A (en) * | 1987-09-24 | 1989-03-27 | Agency Ind Science Techn | Optical control circuit and semiconductor device constituting said circuit |
JPS6488528A (en) * | 1987-09-30 | 1989-04-03 | Canon Kk | Remote control signal receiver for camera |
US5057694A (en) * | 1989-03-15 | 1991-10-15 | Matsushita Electric Works, Ltd. | Optoelectronic relay circuit having charging path formed by a switching transistor and a rectifying diode |
JPH0758804B2 (ja) * | 1989-05-17 | 1995-06-21 | 株式会社東芝 | ホトカプラ装置 |
-
1991
- 1991-01-31 US US07/648,862 patent/US5151602A/en not_active Expired - Fee Related
- 1991-02-01 CA CA002035496A patent/CA2035496C/en not_active Expired - Fee Related
- 1991-02-05 DE DE69119261T patent/DE69119261T2/de not_active Expired - Fee Related
- 1991-02-05 EP EP91200228A patent/EP0442561B1/de not_active Expired - Lifetime
- 1991-02-12 KR KR1019910002335A patent/KR950000320B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0442561B1 (de) | 1996-05-08 |
EP0442561A1 (de) | 1991-08-21 |
KR910016146A (ko) | 1991-09-30 |
CA2035496C (en) | 1996-02-20 |
US5151602A (en) | 1992-09-29 |
DE69119261D1 (de) | 1996-06-13 |
KR950000320B1 (ko) | 1995-01-13 |
CA2035496A1 (en) | 1991-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |