DE2942057C3 - Verfahren zum Czochralski-Ziehen eines Silicium-Einkristallstabs - Google Patents

Verfahren zum Czochralski-Ziehen eines Silicium-Einkristallstabs

Info

Publication number
DE2942057C3
DE2942057C3 DE2942057A DE2942057A DE2942057C3 DE 2942057 C3 DE2942057 C3 DE 2942057C3 DE 2942057 A DE2942057 A DE 2942057A DE 2942057 A DE2942057 A DE 2942057A DE 2942057 C3 DE2942057 C3 DE 2942057C3
Authority
DE
Germany
Prior art keywords
silicon
rod
single crystal
temperature
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2942057A
Other languages
German (de)
English (en)
Other versions
DE2942057A1 (de
DE2942057B2 (de
Inventor
Shinichiro Tokyo Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
VLSI Technology Research Association
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VLSI Technology Research Association filed Critical VLSI Technology Research Association
Publication of DE2942057A1 publication Critical patent/DE2942057A1/de
Publication of DE2942057B2 publication Critical patent/DE2942057B2/de
Application granted granted Critical
Publication of DE2942057C3 publication Critical patent/DE2942057C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2942057A 1978-10-17 1979-10-17 Verfahren zum Czochralski-Ziehen eines Silicium-Einkristallstabs Expired DE2942057C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12758078A JPS5556098A (en) 1978-10-17 1978-10-17 Method and apparatus for producing si single crystal rod

Publications (3)

Publication Number Publication Date
DE2942057A1 DE2942057A1 (de) 1980-04-24
DE2942057B2 DE2942057B2 (de) 1981-07-23
DE2942057C3 true DE2942057C3 (de) 1982-05-06

Family

ID=14963567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2942057A Expired DE2942057C3 (de) 1978-10-17 1979-10-17 Verfahren zum Czochralski-Ziehen eines Silicium-Einkristallstabs

Country Status (3)

Country Link
US (1) US4378269A (enExample)
JP (1) JPS5556098A (enExample)
DE (1) DE2942057C3 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478676A (en) * 1982-09-07 1984-10-23 Litton Systems, Inc. Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials
JPS5953974A (ja) * 1982-09-21 1984-03-28 Noriko Ikegami 光学式読取装置
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US5004519A (en) * 1986-12-12 1991-04-02 Texas Instruments Incorporated Radiation heat shield for silicon melt-in manufacturing of single crystal silicon
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH0259489A (ja) * 1988-08-25 1990-02-28 Shin Etsu Handotai Co Ltd 化合物半導体単結晶の製造方法
JPH0633235B2 (ja) * 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH0388794A (ja) * 1989-08-31 1991-04-15 Nippon Steel Corp シリコン単結晶の引上げ方法および装置
JP2549445B2 (ja) * 1989-12-05 1996-10-30 新日本製鐵株式会社 シリコン単結晶の製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
TW226012B (enExample) * 1991-11-19 1994-07-01 Dunlena Pty Ltd
JP3006368B2 (ja) * 1993-10-18 2000-02-07 住友金属工業株式会社 酸化膜耐圧特性に優れたシリコン単結晶の製造方法および製造装置
JPH07200730A (ja) * 1993-12-28 1995-08-04 Murata Mach Ltd 文字読取り装置及び文字ラベル
WO2000041227A1 (en) * 1998-12-28 2000-07-13 Shin-Etsu Handotai Co.,Ltd. Method for thermally annealing silicon wafer and silicon wafer
ITTO20110335A1 (it) * 2011-04-14 2012-10-15 Consiglio Nazionale Ricerche Procedimento di formazione di cristalli massivi, in particolare monocristalli di fluoruri drogati con ioni di terre rare
US9488777B2 (en) * 2013-09-11 2016-11-08 Oracle International Corporation Back-side etching and cleaving of substrates
TWI683042B (zh) * 2018-12-28 2020-01-21 環球晶圓股份有限公司 矽單晶長晶設備

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
US3192082A (en) * 1962-10-23 1965-06-29 Hitachi Ltd Process for the production of npn or pnp junction
BE684801A (enExample) * 1965-08-05 1967-01-03
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
JPS516187A (ja) * 1974-07-05 1976-01-19 Dowa Mining Co Kinzokukankagobutsutanketsushono hikiagehoho oyobi korenishosurudenkiro

Also Published As

Publication number Publication date
US4378269A (en) 1983-03-29
JPS5750759B2 (enExample) 1982-10-28
JPS5556098A (en) 1980-04-24
DE2942057A1 (de) 1980-04-24
DE2942057B2 (de) 1981-07-23

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: HITACHI, LTD., TOKIO/TOKYO, JP KABUSHIKI KAISHA TO

8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING. KOTTMANN, D., DIPL.-ING, PAT.-ANWAELTE, 8000 MUENCHEN