DE2804500C2 - Sperrschicht-Feldeffekttransistor - Google Patents

Sperrschicht-Feldeffekttransistor

Info

Publication number
DE2804500C2
DE2804500C2 DE2804500A DE2804500A DE2804500C2 DE 2804500 C2 DE2804500 C2 DE 2804500C2 DE 2804500 A DE2804500 A DE 2804500A DE 2804500 A DE2804500 A DE 2804500A DE 2804500 C2 DE2804500 C2 DE 2804500C2
Authority
DE
Germany
Prior art keywords
zone
current channel
gate
channel zone
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2804500A
Other languages
German (de)
English (en)
Other versions
DE2804500A1 (de
Inventor
Jun-Ichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1046077A external-priority patent/JPS5396681A/ja
Priority claimed from JP52015880A external-priority patent/JPS5853517B2/ja
Priority claimed from JP1732777A external-priority patent/JPS53102661A/ja
Priority claimed from JP52019466A external-priority patent/JPS5924549B2/ja
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Priority to DE2858820A priority Critical patent/DE2858820C2/de
Publication of DE2804500A1 publication Critical patent/DE2804500A1/de
Application granted granted Critical
Publication of DE2804500C2 publication Critical patent/DE2804500C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W10/014—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
    • H10W10/0145—
    • H10W10/041—
    • H10W10/17—
    • H10W10/40—

Landscapes

  • Junction Field-Effect Transistors (AREA)
DE2804500A 1977-02-02 1978-02-02 Sperrschicht-Feldeffekttransistor Expired - Lifetime DE2804500C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2858820A DE2858820C2 (de) 1977-02-02 1978-02-02 I·2·L-Schaltungsstruktur

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1046077A JPS5396681A (en) 1977-02-02 1977-02-02 Semiconductor ic
JP52015880A JPS5853517B2 (ja) 1977-02-15 1977-02-15 半導体集積回路
JP1732777A JPS53102661A (en) 1977-02-18 1977-02-18 Semiconductor ic
JP52019466A JPS5924549B2 (ja) 1977-02-24 1977-02-24 半導体論理集積回路

Publications (2)

Publication Number Publication Date
DE2804500A1 DE2804500A1 (de) 1978-08-03
DE2804500C2 true DE2804500C2 (de) 1994-02-10

Family

ID=27455395

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2804500A Expired - Lifetime DE2804500C2 (de) 1977-02-02 1978-02-02 Sperrschicht-Feldeffekttransistor

Country Status (5)

Country Link
US (1) US4608582A (esLanguage)
DE (1) DE2804500C2 (esLanguage)
FR (1) FR2379913A1 (esLanguage)
GB (1) GB1600825A (esLanguage)
NL (1) NL191525C (esLanguage)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL188061C (nl) * 1977-05-15 1992-03-16 Zaidan Hojin Handotai Kenkyu Geintegreerde halfgeleiderinrichting.
FR2480505A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication
JPS59119848A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置
US5066603A (en) * 1989-09-06 1991-11-19 Gte Laboratories Incorporated Method of manufacturing static induction transistors
US5126830A (en) * 1989-10-31 1992-06-30 General Electric Company Cryogenic semiconductor power devices
CA2056087C (en) * 1990-11-27 1998-01-27 Masakazu Morishita Photoelectric converting device and information processing apparatus employing the same
JP2689057B2 (ja) * 1992-09-16 1997-12-10 本田技研工業株式会社 静電誘導型半導体装置
DE4423619A1 (de) 1994-07-06 1996-01-11 Bosch Gmbh Robert Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung
FR2969815B1 (fr) * 2010-12-27 2013-11-22 Soitec Silicon On Insulator Tech Procédé de fabrication d'un dispositif semi-conducteur
KR20170097712A (ko) * 2014-12-18 2017-08-28 라이프 테크놀로지스 코포레이션 대형 fet 어레이를 사용한 분석물 측정을 위한 방법과 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US29971A (en) * 1860-09-11 Cotton-cleaner
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
JPS526076B1 (esLanguage) * 1971-04-28 1977-02-18
JPS5217720B1 (esLanguage) * 1971-07-31 1977-05-17
USRE29971E (en) 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
US3808515A (en) * 1972-11-03 1974-04-30 Bell Telephone Labor Inc Chopper devices and circuits
JPS5811102B2 (ja) 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
JPS608628B2 (ja) 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector

Also Published As

Publication number Publication date
US4608582A (en) 1986-08-26
DE2804500A1 (de) 1978-08-03
NL191525C (nl) 1995-08-21
GB1600825A (en) 1981-10-21
FR2379913A1 (fr) 1978-09-01
NL7801082A (nl) 1978-08-04
NL191525B (nl) 1995-04-18
FR2379913B1 (esLanguage) 1985-02-01

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