DE2754412A1 - Leistungstransistor und verfahren zu dessen herstellung - Google Patents
Leistungstransistor und verfahren zu dessen herstellungInfo
- Publication number
- DE2754412A1 DE2754412A1 DE19772754412 DE2754412A DE2754412A1 DE 2754412 A1 DE2754412 A1 DE 2754412A1 DE 19772754412 DE19772754412 DE 19772754412 DE 2754412 A DE2754412 A DE 2754412A DE 2754412 A1 DE2754412 A1 DE 2754412A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- base
- emitter
- transistor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 32
- 230000000694 effects Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7638303A FR2374742A1 (fr) | 1976-12-20 | 1976-12-20 | Transistor multicouche pour tensions elevees et son procede de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2754412A1 true DE2754412A1 (de) | 1978-06-22 |
Family
ID=9181255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772754412 Withdrawn DE2754412A1 (de) | 1976-12-20 | 1977-12-07 | Leistungstransistor und verfahren zu dessen herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4315271A (enExample) |
| JP (1) | JPS5377473A (enExample) |
| CA (1) | CA1091816A (enExample) |
| DE (1) | DE2754412A1 (enExample) |
| FR (1) | FR2374742A1 (enExample) |
| GB (1) | GB1547125A (enExample) |
| NL (1) | NL7713947A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3927679A1 (de) * | 1988-08-27 | 1990-03-15 | Fuji Electric Co Ltd | Transistor |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5598854A (en) * | 1979-01-24 | 1980-07-28 | Mitsubishi Electric Corp | Semiconductor device |
| DE3016749A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung |
| DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
| JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| FR2528233A1 (fr) * | 1982-06-08 | 1983-12-09 | Thomson Csf | Structure de doigt d'emetteur dans un transistor de commutation |
| FR2570879B1 (fr) * | 1984-09-21 | 1987-05-22 | Thomson Csf | Transistor bipolaire de puissance utilisable en commutation |
| JPS61294856A (ja) * | 1985-06-21 | 1986-12-25 | Nec Corp | 高耐圧半導体装置 |
| JPS62142356A (ja) * | 1985-12-17 | 1987-06-25 | Sanken Electric Co Ltd | トランジスタ |
| US4967254A (en) * | 1987-07-16 | 1990-10-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| JP2551152B2 (ja) * | 1989-06-29 | 1996-11-06 | 富士電機株式会社 | Ｍｏｓコントロールサイリスタ |
| JPH067555B2 (ja) * | 1989-07-10 | 1994-01-26 | サンケン電気株式会社 | マルチセル型トランジスタ |
| EP0609351A4 (en) * | 1991-10-23 | 1995-01-04 | Microunity Systems Eng | BOPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND BREAKTHROUGH CHARACTERISTICS. |
| US5716859A (en) * | 1995-12-22 | 1998-02-10 | The Whitaker Corporation | Method of fabricating a silicon BJT |
| EP0878848A1 (en) | 1997-05-16 | 1998-11-18 | STMicroelectronics S.r.l. | Vertical bipolar semiconductor power transistor with an interdigitised geometry, with optimisation of the base-to-emitter potential difference |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
| US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
| CH436494A (de) * | 1966-04-22 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterventil |
| US3617828A (en) * | 1969-09-24 | 1971-11-02 | Gen Electric | Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region |
| US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
| US3896477A (en) * | 1973-11-07 | 1975-07-22 | Jearld L Hutson | Multilayer semiconductor switching devices |
| JPS512526U (enExample) * | 1974-06-24 | 1976-01-09 | ||
| US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
-
1976
- 1976-12-20 FR FR7638303A patent/FR2374742A1/fr active Granted
-
1977
- 1977-12-07 DE DE19772754412 patent/DE2754412A1/de not_active Withdrawn
- 1977-12-15 CA CA293,149A patent/CA1091816A/en not_active Expired
- 1977-12-16 GB GB52439/77A patent/GB1547125A/en not_active Expired
- 1977-12-16 NL NL7713947A patent/NL7713947A/xx not_active Application Discontinuation
- 1977-12-17 JP JP15122977A patent/JPS5377473A/ja active Pending
-
1980
- 1980-03-27 US US06/134,395 patent/US4315271A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3927679A1 (de) * | 1988-08-27 | 1990-03-15 | Fuji Electric Co Ltd | Transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| US4315271A (en) | 1982-02-09 |
| NL7713947A (nl) | 1978-06-22 |
| FR2374742A1 (fr) | 1978-07-13 |
| CA1091816A (en) | 1980-12-16 |
| GB1547125A (en) | 1979-06-06 |
| JPS5377473A (en) | 1978-07-08 |
| FR2374742B1 (enExample) | 1980-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8139 | Disposal/non-payment of the annual fee |