GB1547125A - Transistor and their manufacture - Google Patents

Transistor and their manufacture

Info

Publication number
GB1547125A
GB1547125A GB52439/77A GB5243977A GB1547125A GB 1547125 A GB1547125 A GB 1547125A GB 52439/77 A GB52439/77 A GB 52439/77A GB 5243977 A GB5243977 A GB 5243977A GB 1547125 A GB1547125 A GB 1547125A
Authority
GB
United Kingdom
Prior art keywords
transistor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52439/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB1547125A publication Critical patent/GB1547125A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
GB52439/77A 1976-12-20 1977-12-16 Transistor and their manufacture Expired GB1547125A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7638303A FR2374742A1 (fr) 1976-12-20 1976-12-20 Transistor multicouche pour tensions elevees et son procede de fabrication

Publications (1)

Publication Number Publication Date
GB1547125A true GB1547125A (en) 1979-06-06

Family

ID=9181255

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52439/77A Expired GB1547125A (en) 1976-12-20 1977-12-16 Transistor and their manufacture

Country Status (7)

Country Link
US (1) US4315271A (enExample)
JP (1) JPS5377473A (enExample)
CA (1) CA1091816A (enExample)
DE (1) DE2754412A1 (enExample)
FR (1) FR2374742A1 (enExample)
GB (1) GB1547125A (enExample)
NL (1) NL7713947A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598854A (en) * 1979-01-24 1980-07-28 Mitsubishi Electric Corp Semiconductor device
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
FR2528233A1 (fr) * 1982-06-08 1983-12-09 Thomson Csf Structure de doigt d'emetteur dans un transistor de commutation
FR2570879B1 (fr) * 1984-09-21 1987-05-22 Thomson Csf Transistor bipolaire de puissance utilisable en commutation
JPS61294856A (ja) * 1985-06-21 1986-12-25 Nec Corp 高耐圧半導体装置
JPS62142356A (ja) * 1985-12-17 1987-06-25 Sanken Electric Co Ltd トランジスタ
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH0262048A (ja) * 1988-08-27 1990-03-01 Fuji Electric Co Ltd トランジスタ
JP2551152B2 (ja) * 1989-06-29 1996-11-06 富士電機株式会社 Ｍｏｓコントロールサイリスタ
JPH067555B2 (ja) * 1989-07-10 1994-01-26 サンケン電気株式会社 マルチセル型トランジスタ
EP0609351A4 (en) * 1991-10-23 1995-01-04 Microunity Systems Eng BOPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND BREAKTHROUGH CHARACTERISTICS.
US5716859A (en) * 1995-12-22 1998-02-10 The Whitaker Corporation Method of fabricating a silicon BJT
EP0878848A1 (en) 1997-05-16 1998-11-18 STMicroelectronics S.r.l. Vertical bipolar semiconductor power transistor with an interdigitised geometry, with optimisation of the base-to-emitter potential difference

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil
US3617828A (en) * 1969-09-24 1971-11-02 Gen Electric Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
JPS512526U (enExample) * 1974-06-24 1976-01-09
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices

Also Published As

Publication number Publication date
US4315271A (en) 1982-02-09
NL7713947A (nl) 1978-06-22
FR2374742A1 (fr) 1978-07-13
CA1091816A (en) 1980-12-16
DE2754412A1 (de) 1978-06-22
JPS5377473A (en) 1978-07-08
FR2374742B1 (enExample) 1980-12-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee