DE2746700A1 - Integrierte halbleitervorrichtung - Google Patents

Integrierte halbleitervorrichtung

Info

Publication number
DE2746700A1
DE2746700A1 DE19772746700 DE2746700A DE2746700A1 DE 2746700 A1 DE2746700 A1 DE 2746700A1 DE 19772746700 DE19772746700 DE 19772746700 DE 2746700 A DE2746700 A DE 2746700A DE 2746700 A1 DE2746700 A1 DE 2746700A1
Authority
DE
Germany
Prior art keywords
zone
isolation
conductivity type
type
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19772746700
Other languages
German (de)
English (en)
Other versions
DE2746700C2 (https=
Inventor
Robert Lee Ayers
Raymond Weaver Hamaker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2746700A1 publication Critical patent/DE2746700A1/de
Application granted granted Critical
Publication of DE2746700C2 publication Critical patent/DE2746700C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)
DE19772746700 1976-10-28 1977-10-18 Integrierte halbleitervorrichtung Granted DE2746700A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/736,646 US4113512A (en) 1976-10-28 1976-10-28 Technique for preventing forward biased epi-isolation degradation

Publications (2)

Publication Number Publication Date
DE2746700A1 true DE2746700A1 (de) 1978-05-11
DE2746700C2 DE2746700C2 (https=) 1988-12-22

Family

ID=24960699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772746700 Granted DE2746700A1 (de) 1976-10-28 1977-10-18 Integrierte halbleitervorrichtung

Country Status (12)

Country Link
US (1) US4113512A (https=)
JP (1) JPS5354490A (https=)
BR (1) BR7706777A (https=)
CA (1) CA1057419A (https=)
CH (1) CH619072A5 (https=)
DE (1) DE2746700A1 (https=)
ES (1) ES463621A1 (https=)
FR (1) FR2369687A1 (https=)
GB (1) GB1584990A (https=)
IT (1) IT1114162B (https=)
NL (1) NL7711278A (https=)
SE (1) SE431272B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
US5041896A (en) * 1989-07-06 1991-08-20 General Electric Company Symmetrical blocking high voltage semiconductor device and method of fabrication
TW274628B (https=) * 1994-06-03 1996-04-21 At & T Corp
JP3408098B2 (ja) * 1997-02-20 2003-05-19 キヤノン株式会社 固体撮像装置及びｘ線撮像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1437276A (fr) * 1964-06-23 1966-04-29 Ncr Co Circuit semi-conducteur intégré
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
US3964705A (en) * 1970-12-23 1976-06-22 Bassani S.P.A. Frame for the mounting of interchangeable electrical units
US3697827A (en) * 1971-02-09 1972-10-10 Unitrode Corp Structure and formation of semiconductors with transverse conductivity gradients
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring
US4021270A (en) * 1976-06-28 1977-05-03 Motorola, Inc. Double master mask process for integrated circuit manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1437276A (fr) * 1964-06-23 1966-04-29 Ncr Co Circuit semi-conducteur intégré
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
F. Barson et al., Fall Meeting of Electrochem. Society, Oct. 1969, Abstract 196 *
Hall et al., Journal of Applied Physics, Bd. 35, 1964, S. 379 *
J.E. Lawrence, Trans. AIME 242, 1968, S. 484 *
Longini, Solid State Electronics, Bd. 5, 1962, S. 127 *

Also Published As

Publication number Publication date
US4113512A (en) 1978-09-12
BR7706777A (pt) 1978-08-22
FR2369687B1 (https=) 1980-08-01
CA1057419A (en) 1979-06-26
DE2746700C2 (https=) 1988-12-22
ES463621A1 (es) 1978-07-01
FR2369687A1 (fr) 1978-05-26
SE431272B (sv) 1984-01-23
GB1584990A (en) 1981-02-18
JPS5424270B2 (https=) 1979-08-20
CH619072A5 (https=) 1980-08-29
JPS5354490A (en) 1978-05-17
SE7711985L (sv) 1978-04-29
IT1114162B (it) 1986-01-27
NL7711278A (https=) 1978-05-03

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee