FR2369687A1 - Technique permettant d'empecher la degradation des jonctions fo - Google Patents

Technique permettant d'empecher la degradation des jonctions fo

Info

Publication number
FR2369687A1
FR2369687A1 FR7727688A FR7727688A FR2369687A1 FR 2369687 A1 FR2369687 A1 FR 2369687A1 FR 7727688 A FR7727688 A FR 7727688A FR 7727688 A FR7727688 A FR 7727688A FR 2369687 A1 FR2369687 A1 FR 2369687A1
Authority
FR
France
Prior art keywords
junctions
type
degradation
technique
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7727688A
Other languages
English (en)
Other versions
FR2369687B1 (fr
Inventor
Robert L Ayers
Raymond W Hamaker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2369687A1 publication Critical patent/FR2369687A1/fr
Application granted granted Critical
Publication of FR2369687B1 publication Critical patent/FR2369687B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)

Abstract

Techniques permettant d'empêcher la dégradation des jonctions formées entre les régions d'isolation polarisées et les régions épitaxiales et structures en résultant Une telle structure comprend un anneau de garde 8 de type P légèrement dopé qui englobe la région d'isolation 2 de type P+, formée dans la couche épitaxiale de type N, 4. Application à la fabrication de dispositifs de commande de panneaux d'affichage à gaz.
FR7727688A 1976-10-28 1977-09-09 Technique permettant d'empecher la degradation des jonctions fo Granted FR2369687A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/736,646 US4113512A (en) 1976-10-28 1976-10-28 Technique for preventing forward biased epi-isolation degradation

Publications (2)

Publication Number Publication Date
FR2369687A1 true FR2369687A1 (fr) 1978-05-26
FR2369687B1 FR2369687B1 (fr) 1980-08-01

Family

ID=24960699

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7727688A Granted FR2369687A1 (fr) 1976-10-28 1977-09-09 Technique permettant d'empecher la degradation des jonctions fo

Country Status (12)

Country Link
US (1) US4113512A (fr)
JP (1) JPS5354490A (fr)
BR (1) BR7706777A (fr)
CA (1) CA1057419A (fr)
CH (1) CH619072A5 (fr)
DE (1) DE2746700A1 (fr)
ES (1) ES463621A1 (fr)
FR (1) FR2369687A1 (fr)
GB (1) GB1584990A (fr)
IT (1) IT1114162B (fr)
NL (1) NL7711278A (fr)
SE (1) SE431272B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
US5041896A (en) * 1989-07-06 1991-08-20 General Electric Company Symmetrical blocking high voltage semiconductor device and method of fabrication
TW274628B (fr) * 1994-06-03 1996-04-21 At & T Corp
JP3408098B2 (ja) * 1997-02-20 2003-05-19 キヤノン株式会社 固体撮像装置及びｘ線撮像装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1437276A (fr) * 1964-06-23 1966-04-29 Ncr Co Circuit semi-conducteur intégré
FR2150542A1 (fr) * 1971-08-26 1973-04-06 Dionics Inc
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
US3964705A (en) * 1970-12-23 1976-06-22 Bassani S.P.A. Frame for the mounting of interchangeable electrical units
US3697827A (en) * 1971-02-09 1972-10-10 Unitrode Corp Structure and formation of semiconductors with transverse conductivity gradients
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
US4021270A (en) * 1976-06-28 1977-05-03 Motorola, Inc. Double master mask process for integrated circuit manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1437276A (fr) * 1964-06-23 1966-04-29 Ncr Co Circuit semi-conducteur intégré
FR2150542A1 (fr) * 1971-08-26 1973-04-06 Dionics Inc
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring

Also Published As

Publication number Publication date
BR7706777A (pt) 1978-08-22
GB1584990A (en) 1981-02-18
DE2746700A1 (de) 1978-05-11
US4113512A (en) 1978-09-12
SE7711985L (sv) 1978-04-29
FR2369687B1 (fr) 1980-08-01
NL7711278A (fr) 1978-05-03
CH619072A5 (fr) 1980-08-29
ES463621A1 (es) 1978-07-01
CA1057419A (fr) 1979-06-26
JPS5354490A (en) 1978-05-17
IT1114162B (it) 1986-01-27
JPS5424270B2 (fr) 1979-08-20
SE431272B (sv) 1984-01-23
DE2746700C2 (fr) 1988-12-22

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Legal Events

Date Code Title Description
ST Notification of lapse