GB983146A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB983146A
GB983146A GB29818/60A GB2981860A GB983146A GB 983146 A GB983146 A GB 983146A GB 29818/60 A GB29818/60 A GB 29818/60A GB 2981860 A GB2981860 A GB 2981860A GB 983146 A GB983146 A GB 983146A
Authority
GB
United Kingdom
Prior art keywords
layers
junction
support
semi
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29818/60A
Inventor
John Bernard Setchfield
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL268782D priority Critical patent/NL268782A/xx
Priority to BE629065D priority patent/BE629065A/xx
Priority to NL289632D priority patent/NL289632A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB29818/60A priority patent/GB983146A/en
Priority to GB18743/61A priority patent/GB974004A/en
Priority to DEJ20423A priority patent/DE1172777B/en
Priority to CH1000161A priority patent/CH397874A/en
Priority to FR871871A priority patent/FR1298799A/en
Priority to BE607661A priority patent/BE607661A/en
Priority to GB8001/62A priority patent/GB1005070A/en
Priority to DEJ21761A priority patent/DE1210085B/en
Priority to FR898488A priority patent/FR81689E/en
Priority to DEJ23252A priority patent/DE1208410B/en
Priority to FR926532A priority patent/FR83143E/en
Priority to CH264463A priority patent/CH412116A/en
Publication of GB983146A publication Critical patent/GB983146A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Weting (AREA)

Abstract

983,146. Semi - conductor devices. STANDARD TELEPHONES & CABLES Ltd. Aug. 25, 1961 [Aug. 30, 1960], No. 29818/60. Heading H1K. Semi-conductor devices include an effectively non - conducting support having a planar surface on which are two sideby - side semi - conductor layers of opposite conductivity type arranged in edge to edge contact to form a PN junction between them, the width of the junction being less than that of the support in the junction region. The embodiments described make use of a high resistivity intrinsic semi-conductor material such as silicon as the effectively non-conducting support but the use of ceramics and other materials is envisaged. In constructing semi-conductor diodes P and N-type layers 2 and 3 are formed on a disc 1 of high resistivity silicon (Fig. 2) either by solid state diffusion or by a deposition process such as epitoxial growth. Strips which are to form separate diodes are cut from the disc and portions of the doped layers are removed to expose parts 1a of the support surface and thus reduce the junction area. A coating 5 (Fig. 7) of a metal such as aluminium is then applied over most of the surface of the P and N layers leaving only the region in the vicinity of the junction uncovered. Silver layers 6 are then provided at the ends of the metal coating and the diode placed in a two-part metal tube 7, of e.g. Ni/Fe alloy, whose halves are joined by a glass bead 8 exposing the diode junction. Solder 9 is applied to seal the tube and to contact the silver layers of the varactor diode which is then suitable for insertion into a waveguide. Simulated point contact diodes are described in Figs. 8 and 9 (not shown) in which oxide masking of the support is used to limit the area of deposition of the P and N layers where the junction is to be formed. The diode of Fig. 9 (not shown) has its N-type layer produced by diffusion on the surface of the intrinsic silica support while its P-type layer is produced by evaporation and alloying of e.g. A1/B. Tunnel diodes may be made like the diode of Fig. 7 but using very high doping of the P and N layers, while transistors may be formed by having three layers side by side on the support.
GB29818/60A 1960-08-30 1960-08-30 Semiconductor device Expired GB983146A (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NL268782D NL268782A (en) 1960-08-30
BE629065D BE629065A (en) 1960-08-30
NL289632D NL289632A (en) 1960-08-30
GB29818/60A GB983146A (en) 1960-08-30 1960-08-30 Semiconductor device
GB18743/61A GB974004A (en) 1960-08-30 1961-05-24 Improvements in or relating to semiconductor devices
DEJ20423A DE1172777B (en) 1960-08-30 1961-08-18 Semiconductor component with at least one pn junction and method for manufacturing
CH1000161A CH397874A (en) 1960-08-30 1961-08-28 Semiconductor device
FR871871A FR1298799A (en) 1960-08-30 1961-08-30 Semiconductor device
BE607661A BE607661A (en) 1960-08-30 1961-08-30 Semiconductor device.
GB8001/62A GB1005070A (en) 1960-08-30 1962-03-01 Improvements in or relating to semiconductor devices
DEJ21761A DE1210085B (en) 1960-08-30 1962-05-12 Method for manufacturing electrical semiconductor components
FR898488A FR81689E (en) 1960-08-30 1962-05-23 Semiconductor device
DEJ23252A DE1208410B (en) 1960-08-30 1963-02-26 Method for manufacturing electrical semiconductor components with at least one tunnel junction, in particular tunnel diodes
FR926532A FR83143E (en) 1960-08-30 1963-03-01 Semiconductor device
CH264463A CH412116A (en) 1960-08-30 1963-03-01 Method of manufacturing a semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB29818/60A GB983146A (en) 1960-08-30 1960-08-30 Semiconductor device
GB18743/61A GB974004A (en) 1960-08-30 1961-05-24 Improvements in or relating to semiconductor devices
GB8001/62A GB1005070A (en) 1960-08-30 1962-03-01 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB983146A true GB983146A (en) 1965-02-10

Family

ID=27255103

Family Applications (3)

Application Number Title Priority Date Filing Date
GB29818/60A Expired GB983146A (en) 1960-08-30 1960-08-30 Semiconductor device
GB18743/61A Expired GB974004A (en) 1960-08-30 1961-05-24 Improvements in or relating to semiconductor devices
GB8001/62A Expired GB1005070A (en) 1960-08-30 1962-03-01 Improvements in or relating to semiconductor devices

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB18743/61A Expired GB974004A (en) 1960-08-30 1961-05-24 Improvements in or relating to semiconductor devices
GB8001/62A Expired GB1005070A (en) 1960-08-30 1962-03-01 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
BE (1) BE629065A (en)
CH (2) CH397874A (en)
DE (3) DE1172777B (en)
FR (1) FR1298799A (en)
GB (3) GB983146A (en)
NL (2) NL289632A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (en) * 1948-06-26
NL269212A (en) * 1953-07-28 1900-01-01
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
US2964830A (en) * 1957-01-31 1960-12-20 Westinghouse Electric Corp Silicon semiconductor devices
FR1217793A (en) * 1958-12-09 1960-05-05 Improvements in the manufacture of semiconductor elements
GB872531A (en) * 1959-03-24 1961-07-12 Ass Elect Ind Improvements relating to the production of transistors
FR1281763A (en) * 1960-02-29 1962-01-12 Thomson Houston Comp Francaise Improvements to semiconductor device manufacturing processes

Also Published As

Publication number Publication date
GB974004A (en) 1964-11-04
BE629065A (en)
DE1210085B (en) 1966-02-03
DE1172777B (en) 1964-06-25
CH412116A (en) 1966-04-30
FR1298799A (en) 1962-07-13
CH397874A (en) 1965-08-31
NL289632A (en)
GB1005070A (en) 1965-09-22
DE1208410B (en) 1966-01-05
NL268782A (en)

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