DE2724646C2 - - Google Patents
Info
- Publication number
- DE2724646C2 DE2724646C2 DE19772724646 DE2724646A DE2724646C2 DE 2724646 C2 DE2724646 C2 DE 2724646C2 DE 19772724646 DE19772724646 DE 19772724646 DE 2724646 A DE2724646 A DE 2724646A DE 2724646 C2 DE2724646 C2 DE 2724646C2
- Authority
- DE
- Germany
- Prior art keywords
- transistors
- time
- voltage
- transistor
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2760462A DE2760462C2 (de) | 1976-06-01 | 1977-06-01 | Halbleiterspeicheranordnung |
DE2760461A DE2760461C2 (de) | 1976-06-01 | 1977-06-01 | Schaltungsanordnung für einen Halbleiterspeicher |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69173476A | 1976-06-01 | 1976-06-01 | |
US05/691,735 US4081701A (en) | 1976-06-01 | 1976-06-01 | High speed sense amplifier for MOS random access memory |
US05/716,907 US4072932A (en) | 1976-08-23 | 1976-08-23 | Clock generator for semiconductor memory |
US05/716,843 US4077031A (en) | 1976-08-23 | 1976-08-23 | High speed address buffer for semiconductor memory |
US05/748,790 US4110639A (en) | 1976-12-09 | 1976-12-09 | Address buffer circuit for high speed semiconductor memory |
US75180476A | 1976-12-16 | 1976-12-16 | |
US05/756,921 US4144590A (en) | 1976-12-29 | 1976-12-29 | Intermediate output buffer circuit for semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2724646A1 DE2724646A1 (de) | 1977-12-15 |
DE2724646C2 true DE2724646C2 (ru) | 1989-07-27 |
Family
ID=27569886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19772724646 Granted DE2724646A1 (de) | 1976-06-01 | 1977-06-01 | Halbleiterspeicheranordnung |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5810799B2 (ru) |
DE (1) | DE2724646A1 (ru) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53120237A (en) * | 1977-03-29 | 1978-10-20 | Mitsubishi Electric Corp | Semiconductor amplifier circuit |
JPS53120238A (en) * | 1977-03-29 | 1978-10-20 | Mitsubishi Electric Corp | Semiconductor amplifier |
US4247791A (en) * | 1978-04-03 | 1981-01-27 | Rockwell International Corporation | CMOS Memory sense amplifier |
JPS54158828A (en) * | 1978-06-06 | 1979-12-15 | Toshiba Corp | Dynamic type semiconductor memory device |
JPS5817998B2 (ja) * | 1978-10-26 | 1983-04-11 | 富士通株式会社 | 半導体メモリ |
DE2855118C2 (de) * | 1978-12-20 | 1981-03-26 | IBM Deutschland GmbH, 70569 Stuttgart | Dynamischer FET-Speicher |
JPS5712484A (en) * | 1980-06-26 | 1982-01-22 | Mitsubishi Electric Corp | Differential amplifier |
JPS61110399A (ja) * | 1984-11-05 | 1986-05-28 | Toshiba Corp | ダイナミツクメモリのデ−タ出力回路 |
JPH03228282A (ja) * | 1990-10-26 | 1991-10-09 | Hitachi Ltd | 半導体メモリ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5240937B2 (ru) | 1972-05-16 | 1977-10-15 | ||
US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
US3838404A (en) * | 1973-05-17 | 1974-09-24 | Teletype Corp | Random access memory system and cell |
US3940747A (en) * | 1973-08-02 | 1976-02-24 | Texas Instruments Incorporated | High density, high speed random access read-write memory |
US3959781A (en) | 1974-11-04 | 1976-05-25 | Intel Corporation | Semiconductor random access memory |
JPS592118B2 (ja) * | 1976-04-09 | 1984-01-17 | 日本電気株式会社 | 増巾回路 |
US4028557A (en) * | 1976-05-21 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
-
1977
- 1977-06-01 DE DE19772724646 patent/DE2724646A1/de active Granted
- 1977-06-01 JP JP52064561A patent/JPS5810799B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2724646A1 (de) | 1977-12-15 |
JPS5316537A (en) | 1978-02-15 |
JPS5810799B2 (ja) | 1983-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8128 | New person/name/address of the agent |
Representative=s name: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING., PAT. |
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8172 | Supplementary division/partition in: |
Ref country code: DE Ref document number: 2760461 Format of ref document f/p: P |
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Q171 | Divided out to: |
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8172 | Supplementary division/partition in: |
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AH | Division in |
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D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
AH | Division in |
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AH | Division in |
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