DE2724646C2 - - Google Patents

Info

Publication number
DE2724646C2
DE2724646C2 DE19772724646 DE2724646A DE2724646C2 DE 2724646 C2 DE2724646 C2 DE 2724646C2 DE 19772724646 DE19772724646 DE 19772724646 DE 2724646 A DE2724646 A DE 2724646A DE 2724646 C2 DE2724646 C2 DE 2724646C2
Authority
DE
Germany
Prior art keywords
transistors
time
voltage
transistor
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19772724646
Other languages
German (de)
English (en)
Other versions
DE2724646A1 (de
Inventor
Lionel Stewart White Jun.
Norihisa Kitagawa
Donald J. Redwine
Hugh P. Houston Tex. Us Mcadams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/691,735 external-priority patent/US4081701A/en
Priority claimed from US05/716,907 external-priority patent/US4072932A/en
Priority claimed from US05/716,843 external-priority patent/US4077031A/en
Priority claimed from US05/748,790 external-priority patent/US4110639A/en
Priority claimed from US05/756,921 external-priority patent/US4144590A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to DE2760461A priority Critical patent/DE2760461C2/de
Priority to DE2760462A priority patent/DE2760462C2/de
Publication of DE2724646A1 publication Critical patent/DE2724646A1/de
Application granted granted Critical
Publication of DE2724646C2 publication Critical patent/DE2724646C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE19772724646 1976-06-01 1977-06-01 Halbleiterspeicheranordnung Granted DE2724646A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE2760461A DE2760461C2 (de) 1976-06-01 1977-06-01 Schaltungsanordnung für einen Halbleiterspeicher
DE2760462A DE2760462C2 (de) 1976-06-01 1977-06-01 Halbleiterspeicheranordnung

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US69173476A 1976-06-01 1976-06-01
US05/691,735 US4081701A (en) 1976-06-01 1976-06-01 High speed sense amplifier for MOS random access memory
US05/716,907 US4072932A (en) 1976-08-23 1976-08-23 Clock generator for semiconductor memory
US05/716,843 US4077031A (en) 1976-08-23 1976-08-23 High speed address buffer for semiconductor memory
US05/748,790 US4110639A (en) 1976-12-09 1976-12-09 Address buffer circuit for high speed semiconductor memory
US75180476A 1976-12-16 1976-12-16
US05/756,921 US4144590A (en) 1976-12-29 1976-12-29 Intermediate output buffer circuit for semiconductor memory device

Publications (2)

Publication Number Publication Date
DE2724646A1 DE2724646A1 (de) 1977-12-15
DE2724646C2 true DE2724646C2 (ja) 1989-07-27

Family

ID=27569886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772724646 Granted DE2724646A1 (de) 1976-06-01 1977-06-01 Halbleiterspeicheranordnung

Country Status (2)

Country Link
JP (1) JPS5810799B2 (ja)
DE (1) DE2724646A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120237A (en) * 1977-03-29 1978-10-20 Mitsubishi Electric Corp Semiconductor amplifier circuit
JPS53120238A (en) * 1977-03-29 1978-10-20 Mitsubishi Electric Corp Semiconductor amplifier
US4247791A (en) * 1978-04-03 1981-01-27 Rockwell International Corporation CMOS Memory sense amplifier
JPS54158828A (en) * 1978-06-06 1979-12-15 Toshiba Corp Dynamic type semiconductor memory device
JPS5817998B2 (ja) * 1978-10-26 1983-04-11 富士通株式会社 半導体メモリ
DE2855118C2 (de) * 1978-12-20 1981-03-26 IBM Deutschland GmbH, 70569 Stuttgart Dynamischer FET-Speicher
JPS5712484A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Differential amplifier
JPS61110399A (ja) * 1984-11-05 1986-05-28 Toshiba Corp ダイナミツクメモリのデ−タ出力回路
JPH03228282A (ja) * 1990-10-26 1991-10-09 Hitachi Ltd 半導体メモリ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240937B2 (ja) 1972-05-16 1977-10-15
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3959781A (en) 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
JPS592118B2 (ja) * 1976-04-09 1984-01-17 日本電気株式会社 増巾回路
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier

Also Published As

Publication number Publication date
JPS5810799B2 (ja) 1983-02-28
JPS5316537A (en) 1978-02-15
DE2724646A1 (de) 1977-12-15

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8128 New person/name/address of the agent

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8364 No opposition during term of opposition
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