DE2626193A1 - Verfahren zum gleichzeitigen herstellen von integrierten bipolaren und komplementaeren feldeffekttransistoren - Google Patents
Verfahren zum gleichzeitigen herstellen von integrierten bipolaren und komplementaeren feldeffekttransistorenInfo
- Publication number
- DE2626193A1 DE2626193A1 DE19762626193 DE2626193A DE2626193A1 DE 2626193 A1 DE2626193 A1 DE 2626193A1 DE 19762626193 DE19762626193 DE 19762626193 DE 2626193 A DE2626193 A DE 2626193A DE 2626193 A1 DE2626193 A1 DE 2626193A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- layer
- type
- zones
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000005669 field effect Effects 0.000 title claims description 16
- 230000008569 process Effects 0.000 title claims description 11
- 230000000295 complement effect Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 241000881711 Acipenser sturio Species 0.000 claims description 2
- 235000013601 eggs Nutrition 0.000 claims 3
- 230000002452 interceptive effect Effects 0.000 claims 3
- 101150018711 AASS gene Proteins 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000002950 deficient Effects 0.000 claims 1
- 230000000763 evoking effect Effects 0.000 claims 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 1
- 238000003860 storage Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYOZKLLJJHRFNA-UHFFFAOYSA-N [F].N Chemical compound [F].N VYOZKLLJJHRFNA-UHFFFAOYSA-N 0.000 description 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/588,524 US3955269A (en) | 1975-06-19 | 1975-06-19 | Fabricating high performance integrated bipolar and complementary field effect transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2626193A1 true DE2626193A1 (de) | 1976-12-30 |
Family
ID=24354203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762626193 Withdrawn DE2626193A1 (de) | 1975-06-19 | 1976-06-11 | Verfahren zum gleichzeitigen herstellen von integrierten bipolaren und komplementaeren feldeffekttransistoren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3955269A (enExample) |
| JP (1) | JPS522292A (enExample) |
| CA (1) | CA1048656A (enExample) |
| DE (1) | DE2626193A1 (enExample) |
| FR (1) | FR2315169A1 (enExample) |
| GB (1) | GB1488239A (enExample) |
| IT (1) | IT1063564B (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51101478A (enExample) * | 1975-03-04 | 1976-09-07 | Suwa Seikosha Kk | |
| US4044452A (en) * | 1976-10-06 | 1977-08-30 | International Business Machines Corporation | Process for making field effect and bipolar transistors on the same semiconductor chip |
| US4087900A (en) * | 1976-10-18 | 1978-05-09 | Bell Telephone Laboratories, Incorporated | Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions |
| JPS5371582A (en) * | 1976-12-08 | 1978-06-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5931052A (ja) * | 1982-08-13 | 1984-02-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
| JPS6072243A (ja) * | 1983-09-28 | 1985-04-24 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
| US4999761A (en) * | 1985-10-01 | 1991-03-12 | Maxim Integrated Products | Integrated dual charge pump power supply and RS-232 transmitter/receiver |
| US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
| US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
| US4929570A (en) * | 1986-10-06 | 1990-05-29 | National Semiconductor Corporation | Selective epitaxy BiCMOS process |
| JPS6449273A (en) * | 1987-08-19 | 1989-02-23 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
| US4857766A (en) * | 1987-10-30 | 1989-08-15 | International Business Machine Corporation | BiMos input circuit |
| US5173435A (en) * | 1987-11-11 | 1992-12-22 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
| EP0450503A3 (en) * | 1990-04-02 | 1992-05-20 | National Semiconductor Corporation | Semiconductor devices with borosilicate glass sidewall spacers and method of fabrication |
| US5139961A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base |
| US5045483A (en) * | 1990-04-02 | 1991-09-03 | National Semiconductor Corporation | Self-aligned silicided base bipolar transistor and resistor and method of fabrication |
| US5219784A (en) * | 1990-04-02 | 1993-06-15 | National Semiconductor Corporation | Spacer formation in a bicmos device |
| US5079182A (en) * | 1990-04-02 | 1992-01-07 | National Semiconductor Corporation | Bicmos device having self-aligned well tap and method of fabrication |
| KR100234550B1 (ko) * | 1990-04-02 | 1999-12-15 | 클라크 3세 존 엠 | 증가된 항복 전압을 지닌 트랜지스터 디바이스 및 제조방법 |
| US5139966A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Low resistance silicided substrate contact |
| US5231042A (en) * | 1990-04-02 | 1993-07-27 | National Semiconductor Corporation | Formation of silicide contacts using a sidewall oxide process |
| US5107321A (en) * | 1990-04-02 | 1992-04-21 | National Semiconductor Corporation | Interconnect method for semiconductor devices |
| US5234847A (en) * | 1990-04-02 | 1993-08-10 | National Semiconductor Corporation | Method of fabricating a BiCMOS device having closely spaced contacts |
| EP0452720A3 (en) * | 1990-04-02 | 1994-10-26 | Nat Semiconductor Corp | A semiconductor structure and method of its manufacture |
| US5071778A (en) * | 1990-06-26 | 1991-12-10 | National Semiconductor Corporation | Self-aligned collector implant for bipolar transistors |
| US5225359A (en) * | 1990-08-17 | 1993-07-06 | National Semiconductor Corporation | Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors |
| US5109256A (en) * | 1990-08-17 | 1992-04-28 | National Semiconductor Corporation | Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
| US5169794A (en) * | 1991-03-22 | 1992-12-08 | National Semiconductor Corporation | Method of fabrication of pnp structure in a common substrate containing npn or MOS structures |
| US5286991A (en) * | 1992-08-26 | 1994-02-15 | Pioneer Semiconductor Corporation | Capacitor for a BiCMOS device |
| US5325268A (en) * | 1993-01-28 | 1994-06-28 | National Semiconductor Corporation | Interconnector for a multi-chip module or package |
| JP2004172389A (ja) * | 2002-11-20 | 2004-06-17 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| DE10330595A1 (de) * | 2003-07-07 | 2005-02-17 | Siemens Ag | Röntgendetektor und Verfahren zur Herstellung von Röntgenbildern mit spektraler Auflösung |
| CN103199091B (zh) * | 2012-01-10 | 2015-12-09 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
| FR1559611A (enExample) * | 1967-06-30 | 1969-03-14 | ||
| US3590343A (en) * | 1969-01-31 | 1971-06-29 | Westinghouse Electric Corp | Resonant gate transistor with fixed position electrically floating gate electrode in addition to resonant member |
| US3582725A (en) * | 1969-08-21 | 1971-06-01 | Nippon Electric Co | Semiconductor integrated circuit device and the method of manufacturing the same |
| NL166156C (nl) * | 1971-05-22 | 1981-06-15 | Philips Nv | Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan. |
| NL7205000A (enExample) * | 1972-04-14 | 1973-10-16 | ||
| US3858231A (en) * | 1973-04-16 | 1974-12-31 | Ibm | Dielectrically isolated schottky barrier structure and method of forming the same |
-
1975
- 1975-06-19 US US05/588,524 patent/US3955269A/en not_active Expired - Lifetime
-
1976
- 1976-04-26 GB GB16803/76A patent/GB1488239A/en not_active Expired
- 1976-05-13 FR FR7615006A patent/FR2315169A1/fr active Granted
- 1976-06-11 DE DE19762626193 patent/DE2626193A1/de not_active Withdrawn
- 1976-06-14 IT IT24251/76A patent/IT1063564B/it active
- 1976-06-16 JP JP51069888A patent/JPS522292A/ja active Granted
- 1976-06-16 CA CA76255057A patent/CA1048656A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1063564B (it) | 1985-02-11 |
| US3955269A (en) | 1976-05-11 |
| FR2315169A1 (fr) | 1977-01-14 |
| GB1488239A (en) | 1977-10-12 |
| CA1048656A (en) | 1979-02-13 |
| FR2315169B1 (enExample) | 1978-05-19 |
| JPS5346705B2 (enExample) | 1978-12-15 |
| JPS522292A (en) | 1977-01-08 |
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